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    VG36643241AT Search Results

    VG36643241AT Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    VG36643241AT-5 Vanguard International Semiconductor Vanguard International Semiconductor Corporation (VIS) Original PDF
    VG36643241AT-7 Vanguard International Semiconductor Vanguard International Semiconductor Corporation (VIS) Original PDF

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    dynamic ram binary cell

    Abstract: QBA-1 qab1
    Text: VIS Preliminary VG36643241AT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 524,288 words x 32 bits x 4 banks. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only


    Original     		VG36643241AT 86-pin 1G5-0172 dynamic ram binary cell QBA-1 qab1 PDF