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    Nexperia PESD2IVN24-UX

    TVS DIODE 24VWM 42VC SOT323
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    Nexperia PESD2IVN24-TR

    TVS DIODE 24VWM 42VC TO236AB
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    Microchip Technology Inc VN2410L-G

    MOSFET N-CH 240V 190MA TO92-3
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    Nexperia PESD2IVN24U-QX

    AUTOMOTIVE LOW SPEED IVN
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    VN24 Datasheets (109)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    VN2406 Supertex N-Channel Enhancement-Mode Vertical DMOS FETs Original PDF
    VN24061 Motorola TMOS FET TRANSISTOR N-Channel-Enhancement Original PDF
    VN2406B Supertex Enhancement Mode MOSFET (includes Low Threshold MOSFET) Original PDF
    VN2406B Motorola Switchmode Datasheet Scan PDF
    VN2406B Motorola TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39 Scan PDF
    VN2406B Unknown Shortform Datasheet & Cross References Data Short Form PDF
    VN2406B Unknown FET Data Book Scan PDF
    VN2406B Unknown Semiconductor Master Cross Reference Guide Scan PDF
    VN2406B Siliconix MOSPOWER Design Data Book 1983 Scan PDF
    VN2406D Vishay Intertechnology N-Channel 240-V (D-S) MOSFET Original PDF
    VN2406D Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistors Original PDF
    VN2406D Unknown Shortform Datasheet & Cross References Data Short Form PDF
    VN2406D Unknown FET Data Book Scan PDF
    VN2406D Unknown Semiconductor Master Cross Reference Guide Scan PDF
    VN2406D Siliconix MOSPOWER Design Data Book 1983 Scan PDF
    VN2406D Vishay N-Channel Enhancement Mode MOSFET Transistor Scan PDF
    VN2406D Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF
    VN2406E Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistors Original PDF
    VN2406E Vishay N-Channel Enhancement Mode MOSFET Transistor Scan PDF
    VN2406L Motorola TMOS FET Transistor Original PDF

    VN24 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    VN2410

    Abstract: No abstract text available
    Text: VN2410 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) VN2410 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si


    Original
    VN2410 VN2410 A020309 PDF

    VN2460

    Abstract: No abstract text available
    Text: VN2460 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 55 55 11 ± 1.5 Au 1 (mils) VN2460 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si


    Original
    VN2460 VN2460 A020309 PDF

    VN24061

    Abstract: VN2406
    Text: VN2406 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) VN2406 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si


    Original
    VN2406 VN2406 A020309 VN24061 PDF

    VN2460N8-G

    Abstract: TRANSISTOR LIZ
    Text: VN2460 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with


    Original
    VN2460 DSFP-VN2460 A102108 VN2460N8-G TRANSISTOR LIZ PDF

    VN2450N8-G

    Abstract: vn4ew
    Text: VN2450 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with


    Original
    VN2450 DSFP-VN2450 A102108 VN2450N8-G vn4ew PDF

    Untitled

    Abstract: No abstract text available
    Text: VN2410 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination


    Original
    VN2410 DSFP-VN2410 A091508 PDF

    Untitled

    Abstract: No abstract text available
    Text: VN2460 N-Channel Enhancement-Mode Vertical DMOS FETs General Description Features Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain


    Original
    VN2460 DSFP-VN2460 A011409 PDF

    VN2410L

    Abstract: 70204 TN2410L VN2406D VN2406L VN2410LS
    Text: TN2410L, VN2406D/E, VN2410L/LS Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS Min (V) TN2410L VN2406D rDS(on) Max (W) VGS(th) (V) ID (A) 10 @ VGS = 4.5 V 0.5 to 1.8 0.18 6 @ VGS = 10 V 0.8 to 2 1.12 6 @ VGS = 10 V


    Original
    TN2410L, VN2406D/E, VN2410L/LS VN2406D TN2410L VN2410L VN2410LS VN2406L S-58620--Rev. 21-Jun-99 VN2410L 70204 TN2410L VN2406D VN2406L VN2410LS PDF

    VN2460

    Abstract: No abstract text available
    Text: Supertex inc. VN2460 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 55 55 11 ± 1.5 Au 1 (mils) VN2460 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description


    Original
    VN2460 VN2460 A031710 PDF

    VN2450

    Abstract: No abstract text available
    Text: Supertex inc. VN2450 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 55 55 11 ± 1.5 Au 1 (mils) VN2450 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description


    Original
    VN2450 VN2450 A031610 PDF

    sivn

    Abstract: VN4E seimens MARKING CODE BV sot-89 125OC VN2450
    Text: VN2450 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with


    Original
    VN2450 DSFP-VN2450 A052209 sivn VN4E seimens MARKING CODE BV sot-89 125OC VN2450 PDF

    sivn

    Abstract: vn4f mark A E sot-89 VN2460 125OC SOT89 mos VN2460N8-G 3V02 VN2460N3-G
    Text: VN2460 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with


    Original
    VN2460 DSFP-VN2460 A011409 sivn vn4f mark A E sot-89 VN2460 125OC SOT89 mos VN2460N8-G 3V02 VN2460N3-G PDF

    2406L

    Abstract: VN2406
    Text: VN2406 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination


    Original
    VN2406 DSFP-VN2406 A041309 2406L VN2406 PDF

    Untitled

    Abstract: No abstract text available
    Text: VN2406L Preferred Device Small Signal MOSFET 200 mAmps, 240 Volts N–Channel TO–92 MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit Drain–Source Voltage VDSS 240 Vdc Drain–Gate Voltage VDGR 60 Vdc Gate–Source Voltage – Continuous – Non–repetitive tp ≤ 50 µs


    Original
    VN2406L r14525 VN2406L/D PDF

    sot-89 MARKING CODE 4A

    Abstract: VN2450 VN2450N3 VN2450N8 VN2450NW VN4E
    Text: VN2450 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-92 TO-243AA* Die* 500V 13Ω 0.5A VN2450N3 VN2450N8 VN2450NW * Same as SOT-89 Product Supplied on 2000 piece carrier tape reels.


    Original
    VN2450 O-243AA* VN2450N3 VN2450N8 VN2450NW OT-89 O-243AA: sot-89 MARKING CODE 4A VN2450 VN2450N3 VN2450N8 VN2450NW VN4E PDF

    sot89 fr5

    Abstract: vn4f VN2460 VN2460N3 VN2460N8 VN2460NW
    Text: VN2460 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-92 TO-243AA* Die* 600V 20Ω 0.25A VN2460N3 VN2460N8 VN2460NW * Same as SOT-89 Product Supplied on 2000 piece carrier tape reels.


    Original
    VN2460 O-243AA* VN2460N3 VN2460N8 VN2460NW OT-89 O-243AA: sot89 fr5 vn4f VN2460 VN2460N3 VN2460N8 VN2460NW PDF

    Untitled

    Abstract: No abstract text available
    Text: VN2410B Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)240 V(BR)GSS (V)240Í I(D) Max. (A)700m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)6.3 Minimum Operating Temp (øC)


    Original
    VN2410B PDF

    2406L

    Abstract: VF25 VN2406
    Text: Supertex inc. VN2406 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds


    Original
    VN2406 DSFP-VN2406 C031411 2406L VF25 VN2406 PDF

    VN2410M

    Abstract: VN2410L
    Text: VN2410 SERIES N-Channel Enhancement-Mode MOS Transistors TO-92 TO-226AA BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V (BR)DSS (V) r DS(ON) (Í1) (A) PACKAGE VN2410L 240 10 0.17 TO-92 VN2410M 240 10 0.19 TO-237 •d 1 SOURCE 2 GATE 3 DRAIN BOTTOM VIEW TO-237


    OCR Scan
    VN2410 O-226AA) VN2410L VN2410M O-237 O-237 VNDB24 VN2410L VN2410M PDF

    Siliconix TO-92S

    Abstract: No abstract text available
    Text: TN2410L, VN2406D/L, VN241 OL/LS Vishay Siliconix N-Channel 240-V D-S MOSFETs PRODUCT SUMMARY rDS(on) Max (Q) vGs(th)00 Id (A) TN2410L 1 0 V q s = 4 .5 V 0.5 to 1.8 0.18 VN2406D 6 @ V Gs = 1 0 V 0.8 to 2 1.12 6 ® VGS = 1 0 V 0.8 to 2 0.18 VN2410L 1 0 ® V qs = 1 0 V


    OCR Scan
    TN2410L, VN2406D/L, VN241 TN2410L VN2406D VN2406L VN2410L VN2410LS S-04279-- 16-Jul-01 Siliconix TO-92S PDF

    4E7 philips

    Abstract: KY 711 VN2406L FL 210 transistor
    Text: • Philips 711002b DDbflOSS T4S ■ PHIN Sem iconductors Data sheet status Product specification date of issue July 1993 FEATURES VN2406L N-channel enhancement mode vertical D-MOS transistor PIN CONFIGURATION PINNING - TO -92 variant • Very low RDs 0n


    OCR Scan
    711002b VN2406L MBB073 711Dfl5h D0bfl057 MC9357 4E7 philips KY 711 VN2406L FL 210 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: bbS3T31 D03MDfl3 552 * A P X P h ilip s S e m ic o n d u c to rs VN2406L Data sheet status Product specification date of issue July 1993 N-channel enhancem ent m ode vertical D-M O S transistor N AMER PHILIPS/DISCRETE FEATURES PIN CONFIGURATION PINNING - TO-92 variant


    OCR Scan
    bbS3T31 D03MDfl3 VN2406L 00240flfl PDF

    oni 350

    Abstract: transistor c 4106 VN2406L
    Text: VN2406L* M AXIM UM RATINGS Sym bol Value Unit Drain-Source Voltage Voss 240 V Drain-Gate Voltage V d GR 60 V Vg S Vg s M 'd ±2 0 ±4 0 Vdc Vpk 200 mA 'd m 500 mA Pd 350 mW 2.8 m w rc - °C Rating Gate-Source Voltage - Continuous — Non-repetitive tD s 50 /is


    OCR Scan
    VN2406L* O-226AA) oni 350 transistor c 4106 VN2406L PDF

    Untitled

    Abstract: No abstract text available
    Text: VN2406 VN2410 Super te x inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering information Order Number / Package BVDss I ^DS O N ' d (ON) bvms (max) (min) TO-92 240V 6.on 1.0A VN2406L 240V ion 1.0A VN2410L Features Advanced DMOS Technology □ Free from secondary breakdown


    OCR Scan
    VN2406 VN2410 VN2406L VN2410L VN2410 VN2406 300ns PDF