VN3515
Abstract: No abstract text available
Text: Supertex inc. VN3515 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) VN3515 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description
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VN3515
VN3515
A031610
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VN3515L
Abstract: VN4012L
Text: VN3515L/VN4012L Vishay Siliconix N-Channel 350- and 400-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VN3515L 350 15 @ VGS = 4.5 V 0.6 to 1.8 0.15 VN4012L 400 12 @ VGS = 4.5 V 0.6 to 1.8 0.16 FEATURES BENEFITS
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VN3515L/VN4012L
VN3515L
VN4012L
18-Jul-08
VN3515L
VN4012L
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TN2540
Abstract: VN3515 VN3515L VN4012 VN4012L
Text: VN3515L VN4012L N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) Order Number / Package 350V 15Ω 1.8V 0.15A VN3515L 400V 12Ω 1.8V 0.15A VN4012L TO-92 Features Advanced DMOS Technology
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VN3515L
VN4012L
VN4012
100mA
160mA
TN2540
VN3515
VN3515L
VN4012
VN4012L
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VN3515L
Abstract: VN4012L
Text: VN3515L/VN4012L Siliconix NĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VN3515L 350 15 @ VGS = 4.5 V 0.6 to 1.8 0.15 VN4012L 400 12 @ VGS = 4.5 V 0.6 to 1.8 0.16 Features Benefits
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VN3515L/VN4012L
VN3515L
VN4012L
P-38281--Rev.
VN3515L
VN4012L
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4012L
Abstract: VN3515L VN4012L
Text: VN3515L/VN4012L Vishay Siliconix N-Channel 350- and 400-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VN3515L 350 15 @ VGS = 4.5 V 0.6 to 1.8 0.15 VN4012L 400 12 @ VGS = 4.5 V 0.6 to 1.8 0.16 FEATURES BENEFITS
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VN3515L/VN4012L
VN3515L
VN4012L
08-Apr-05
4012L
VN3515L
VN4012L
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VN3515
Abstract: No abstract text available
Text: VN3515 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) VN3515 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si
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VN3515
VN3515
A020309
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VN4012B
Abstract: p-channel DMOS 125 diode VN3515 VN3515L VN4012 VN4012L
Text: VN3515L VN4012L N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) TO-39 TO-92 350V 15Ω 1.8V 0.15A — VN3515L 400V 12Ω 1.8V 0.15A VN4012B VN4012L Features Advanced DMOS Technology
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VN3515L
VN4012L
VN4012B
100mA
100mA,
VN4012B
p-channel DMOS
125 diode
VN3515
VN3515L
VN4012
VN4012L
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4012l
Abstract: marking code diode 04 to-18 siliconix VN3515L VN4012L
Text: VN3515L/VN4012L Vishay Siliconix N-Channel 350- and 400-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VN3515L 350 15 @ VGS = 4.5 V 0.6 to 1.8 0.15 VN4012L 400 12 @ VGS = 4.5 V 0.6 to 1.8 0.16 FEATURES BENEFITS
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VN3515L/VN4012L
VN3515L
VN4012L
Nov-00
4012l
marking code diode 04 to-18 siliconix
VN3515L
VN4012L
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sivn
Abstract: No abstract text available
Text: VN3515 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities
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VN3515
DSFP-VN3515
A020209
sivn
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sivn
Abstract: sivn fet 125OC VN3515 3515L
Text: VN3515 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination
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VN3515
DSFP-VN3515
A020209
sivn
sivn fet
125OC
VN3515
3515L
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VN3515L
Abstract: VN4012L AUG94
Text: VN3515L/VN4012L N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VN3515L 350 15 @ VGS = 4.5 V 0.6 to 1.8 0.15 VN4012L 400 12 @ VGS = 4.5 V 0.6 to 1.8 0.16 Features Benefits Applications
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VN3515L/VN4012L
VN3515L
VN4012L
P-38281--Rev.
15-Aug-94
VN3515L
VN4012L
AUG94
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Untitled
Abstract: No abstract text available
Text: VN3515 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination
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VN3515
DSFP-VN3515
A102108
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VN3515L
Abstract: VN4012L
Text: VN3515L/VN4012L N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VN3515L 350 15 @ VGS = 4.5 V 0.6 to 1.8 0.15 VN4012L 400 12 @ VGS = 4.5 V 0.6 to 1.8 0.16 Features Benefits Applications
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VN3515L/VN4012L
VN3515L
VN4012L
P-38281--Rev.
15-Aug-94
VN3515L
VN4012L
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VN3515L
Abstract: VN4012L
Text: VN3515L/VN4012L N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VN3515L 350 15 @ VGS = 4.5 V 0.6 to 1.8 0.15 VN4012L 400 12 @ VGS = 4.5 V 0.6 to 1.8 0.16 Features Benefits Applications
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VN3515L/VN4012L
VN3515L
VN4012L
P-38281--Rev.
15-Aug-94
VN3515L
VN4012L
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4012L
Abstract: No abstract text available
Text: VN3515L/VN4012L_ VISHAY T Vishay Siliconix N-Channel 350- and 400-V D-S MOSFETs PRODUCT SUMMARY Part Number V (B R )D S S M î n ( V ) r D S (o n) M a x ( Q ) V G S (th> ( V ) V N3515L 350 15 9 V GS = 4.5 V 0.6 to 1.8 0.15 VN4012L
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VN3515L/VN4012L_
N3515L
VN4012L
S-04379--
16-Jul-01
VN3515L7VN4012L
4012L
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Untitled
Abstract: No abstract text available
Text: fíl Supertex inc. VN3515L VN4012L N-Channel Enhancement-Mode Vertical DMOS FETs BVDSS/ R DS ON ^GS(th) B V dgs (max) (max) 350V 15Q 1.8V 400V 12£2 1.8V 1Í Ordering Information Order Number / Package TO-39 TO-92 0.15 A — VN3515L 0.15A VN4012B VN4012L
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VN3515L
VN4012L
VN4012B
100mA
100mA,
TN06D
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Untitled
Abstract: No abstract text available
Text: VN3515L VN4012L Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information JÎ Order Number / Package BVDSS/ ^D S O N ^ G S (th ) b v dgs (max) (max) 350V 150 1.8V 0.15A VN3515L 400V 12 fl 1.8V 0.15A VN4012L TO-92 Features Advanced DMOS Technology
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VN3515L
VN4012L
capab50
VN3515
VN4012
300ns
TN2540
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Untitled
Abstract: No abstract text available
Text: VN4012L, VN3515L N-Channel Enhancement-Mode MOS Transistors TO-92 TO-226AA PRODUCT SUMMARY PART NUMBER V (BR|DSS VN4012L 400 12 0.16 VN3515L 350 15 0.15 Performance Curves: JFES5& BOTTOM VIEW •d "P (A) VNDV40 1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)
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VN4012L,
VN3515L
VN4012L
VN3515L
O-226AA)
VNDV40
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TN3512L
Abstract: No abstract text available
Text: VNDV1 DIE N-Channel Enhancement-Mode MOS Transistor J 3 T in co rp o ra ted VNDV1CHP* Gate Pad 0.005 0.127 0.007 (0.178) TN3512L TN4012L VN3515L VN4012L ‘ Meets or exceeds specification for all part numbers listed below Source Pad For additional design information please consult the
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TN3512L
TN4012L
VN3515L
VN4012L
VNDV40.
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Untitled
Abstract: No abstract text available
Text: Tem ic siiiconix_ VN3515L/VN4012L N-Channel Enhancement-Mode MOS Transistors Product Summary Part Num ber V BR DSS VN3515L VN4012L r DS(on) M ax (£2) (V ) 15 @ VGS = 4.5 V 0.6 to 1.8 0.15 400 12 @ V GS = 4.5 V 0.6 to 1.8 0.16 Applications
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VN3515L/VN4012L
VN3515L
VN4012L
P-38281--Rev.
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4012L
Abstract: No abstract text available
Text: VN3515L VN4012L N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BV dss / ^DS ON ^GS(th) ^D(ON) Order Number / Package b v dgs (max) (max) (min) TO-39 TO-92 3 5 0V 15Q 1.8V 0.15A — V N 3 51 5L 4 0 0V 12Q 1.8V 0.15A V N 4 01 2B VN 4012L
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VN3515L
VN4012L
4012L
300ns
4012L
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Untitled
Abstract: No abstract text available
Text: Temic siiiconix_ VN3515L/VN4012L N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Mín (V) rns^n) Max (Q) VGS(th) Id (A) (V) VN3515L 350 15 @ V GS = 4.5 V 0.6 to 1.8 0.15 VN4012L 400 12 @ V GS = 4.5 V 0.6 to 1.8
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VN3515L/VN4012L
VN3515L
VN4012L
P-38281--
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Untitled
Abstract: No abstract text available
Text: ÇjpSupertex inc. vn4oi 2l N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss/ R d s <o n Order Number / Package ^G S lh ) (max) b v dgs (max) TO-39 TO-92 350V 15fi 1.8V — VN3515L 400V 12 fi 1.8V VN4012B VN4012L Features Advanced DMOS Technology
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VN4012B
VN3515L
VN4012L
100mA,
100mA
VN4012
160mA
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Untitled
Abstract: No abstract text available
Text: VN3515L VN4012L Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dgs If b v dss/ ^ G S th I d (ON) (max) (min) Order Number / Package TO-92 350V 15& 1.8V 0.15A VN3515L 400V 12£2 1.8V 0.15A VN4012L Features Advanced DMOS Technology
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VN3515L
VN4012L
100mA
100mA,
160mA
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