INTRODUCTION OF AUTOMATIC ROOM power CONTROL
Abstract: TN1041
Text: ispXP Technology Power-up and Hot Socketing December 2002 Technical Note TN1041 Introduction The ispXP eXpanded in-system Programmable device families from Lattice offer the non-volatility of E2 cells together with the infinite reconfigurability of SRAM. This is achieved by the one-to-one relationship between SRAM
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TN1041
1-800-LATTICE
INTRODUCTION OF AUTOMATIC ROOM power CONTROL
TN1041
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HMNP16MM
Abstract: HMNP32MM HMNP32MM-55 HMNP32MM-70 REQ64 K6T4016C3
Text: HANBit HMNP32MM Non-Volatile SRAM MODULE 32Mbyte 8M x 32Bit , PCI interface, (SMM) 5V Part No. HMNP32MM GENERAL DESCRIPTION The HMNP32MM Nonvolatile SRAM is a 33,554,432-byte static RAM organized as 16,777,216 words by 16 bits. The HMNP32MM has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited write cycles of
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HMNP32MM
32Mbyte
32Bit)
HMNP32MM
432-byte
HMNP16MM
HMNP32MM-55
HMNP32MM-70
REQ64
K6T4016C3
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A0-A21
Abstract: hanbit non-volatile ram
Text: HANBit HMN4M8DV N Non-Volatile SRAM MODULE 32Mbit (4,096K x 8-Bit), 40Pin-DIP, 3.3V Part No. HMN4M8DV(N) GENERAL DESCRIPTION The HMN4M8DV Nonvolatile SRAM is a 33,554,432-bit static RAM organized as 4,194,304 bytes by 8 bits. The HMN4M8DV has a self-contained lithium energy source provide reliable non -volatility coupled with the unlimited write
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32Mbit
40Pin-DIP,
432-bit
120ns
150ns
A0-A21
hanbit non-volatile ram
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HMN328D
Abstract: No abstract text available
Text: HANBit HMN328D Non-Volatile SRAM MODULE 256Kbit 32K x 8-Bit ,28Pin DIP, 5V Part No. HMN328D GENERAL DESCRIPTION The HMN328D nonvolatile SRAM is a 262,144-bit static RAM organized as 32,768 bytes by 8 bits. The HMN328D has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited write
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HMN328D
256Kbit
28Pin
HMN328D
144-bit
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A0-A21
Abstract: 40-PIN-DIP
Text: HANBit HMN4M8DV N Non-Volatile SRAM MODULE 32Mbit (4,096K x 8-Bit), 40Pin-DIP, 3.3V Part No. HMN4M8DV(N) GENERAL DESCRIPTION The HMN4M8DV Nonvolatile SRAM is a 33,554,432-bit static RAM organized as 4,194,304 bytes by 8 bits. The HMN4M8DV has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited write
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32Mbit
40Pin-DIP,
432-bit
unconditionally070
120ns
150ns
A0-A21
40-PIN-DIP
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Untitled
Abstract: No abstract text available
Text: HANBit HMN1M8DV Non-Volatile SRAM MODULE 8Mbit 1024k x 8bit 36Pin – DIP, 3.3V Part No. HMN1M8DV GENERAL DESCRIPTION The HMN1M8DV Nonvolatile SRAM is a 8,388,608-bit static RAM organized as 1,048,576 bytes by 8 bits. The HMN1M8DV has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited write
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1024k
36Pin
608-bit
120ns
150ns
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"Single-Port RAM"
Abstract: FIFO CAM
Text: E X P A N D E D Non-Volatile Instant-On Infinitely Reconfigurable P R O G R A M M A B I L I T Y ispXP Technology E2 Non-Volatility + SRAM Reconfigurability = eXpanded Programmability Lattice’s new ispXP eXpanded Programmability technology combines the best features of E2 and SRAM
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225MHz
1-800-LATTICE
I0151
"Single-Port RAM"
FIFO CAM
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MRAM
Abstract: BBSRAM MR2A16A honeywell memory sram
Text: MRAM Fact Sheet Overview Freescale’s magnetoresistive random access memory MRAM is a revolutionary memory technology that can replace many of today’s semiconductor memory technologies. MRAM combines the speed of SRAM and the non-volatility of flash onto a single chip.
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gaussmeter
Abstract: Tunneling Magnetoresistance MR2A16A
Text: Technical Guide MRAM Overview Freescale’s magnetoresistive random access memory MRAM technology combines a magnetic device with standard silicon-based microelectronics to obtain the collective attributes of non-volatility, high-speed operation and unlimited read and write endurance, a
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MR2A16A
gaussmeter
Tunneling Magnetoresistance
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40-PIN-DIP
Abstract: No abstract text available
Text: HANBit HMN1M8DN Non-Volatile SRAM MODULE 8Mbit 1,024K X 8-Bit , 40Pin-DIP, 5V Part No. HMN1M8DN GENERAL DESCRIPTION The HMN1M8DN Nonvolatile SRAM is a 8,388,608-bit static RAM organized as 1,048,576 bytes by 8 bits. The HMN1M8DN has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited write
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40Pin-DIP,
608-bit
40-PIN-DIP
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A0-A21
Abstract: No abstract text available
Text: HANBit HMN4M8D Non-Volatile SRAM MODULE 32Mbit 4,096K x 8-Bit , 40Pin-DIP, 5V Part No. HMN4M8D GENERAL DESCRIPTION The HMN4M8D Nonvolatile SRAM is a 33,554,432-bit static RAM organized as 4,194,304 bytes by 8 bits. The HMN4M8D has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited write
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32Mbit
40Pin-DIP,
432-bit
120ns
150ns
A0-A21
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32PIN-DIP
Abstract: HMN5128DV
Text: HANBit HMN5128DV Non-Volatile SRAM MODULE 4Mbit 512K x 8-Bit ,32Pin-DIP, 3.3V Part No. HMN5128DV GENERAL DESCRIPTION The HMN5128DV Nonvolatile SRAM is a 4,194,304-bit static RAM organized as 524,288 bytes by 8 bits. The HMN5128DV has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited write
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HMN5128DV
32Pin-DIP,
HMN5128DV
304-bit
32PIN-DIP
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Untitled
Abstract: No abstract text available
Text: Hi-Flow 105 Phase Change Coated Aluminum Features and Benefits T YPICAL PROPERT IES OF H I-FLOW 105 PROPERTY Color • Thermal impedance: 0.37°C-in 2/W @25 psi • Used where electrical isolation is not required • Low volatility – less than 1% • Easy to handle in the manufacturing
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D3418
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Untitled
Abstract: No abstract text available
Text: MR256A08B 32K x 8 MRAM FEATURES • 3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Native non-volatility • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • Commercial and industrial temperatures
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MR256A08B
20-years
MR256A08B
144-bit
EST355
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Untitled
Abstract: No abstract text available
Text: MR0A08B FEATURES • • • • • • • • • 128K x 8 MRAM 3.3 Volt power supply Fast 35 ns read/write cycle SRAM compatible timing Native non-volatility Unlimited read & write endurance Data always non-volatile for >20 years at temperature Commercial and industrial temperatures
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MR0A08B
48-ball
44-pin
32-pin
MR0A08B
576-bit
1-877-347-MRAM
EST00183
101113a
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footprint jedec Mo-119
Abstract: MR256A08BCMA35R
Text: MR256A08B FEATURES 32K x 8 MRAM • 3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Native non-volatility • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • Commercial and industrial temperatures
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MR256A08B
20-years
MR256A08B
144-bit
EST00355
EST355
footprint jedec Mo-119
MR256A08BCMA35R
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MR0A08BC
Abstract: No abstract text available
Text: MR0A08B FEATURES 128K x 8 MRAM • 3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Native non-volatility • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • Commercial and industrial temperatures
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MR0A08B
20-years
MR0A08B
576-bit
EST00183
EST183
MR0A08BC
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HMN88D
Abstract: No abstract text available
Text: HANBit HMN88D Non-Volatile SRAM MODULE 64Kbit 8K x 8-Bit ,28Pin DIP, 5V Part No. HMN88D GENERAL DESCRIPTION The HMN88D Nonvolatile SRAM is a 65,536-bit static RAM organized as 8,192 bytes by 8 bits. The HMN88D has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited write
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HMN88D
64Kbit
28Pin
HMN88D
536-bit
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36Pin-DIP
Abstract: No abstract text available
Text: HANBit HMN2M8D Non-Volatile SRAM MODULE 16Mbit 2,048K x 8-Bit , 36Pin-DIP, 5V Part No. HMN2M8D GENERAL DESCRIPTION The HMN2M8D Nonvolatile SRAM is a 16,777,216-bit static RAM organized as 2,097,152 bytes by 8 bits. The HMN2M8D has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited write
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16Mbit
36Pin-DIP,
216-bit
120ns
150ns
36Pin-DIP
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8054 microcontroller
Abstract: S8054 equivalent S8054 XC2000 XC3000 XC3000A XC3000L XC3100 XC4000 XC5200
Text: APPLICATION NOTE APPLICATION NOTE Configuration Issues: Power-up, Volatility, Security, Battery Back-up XAPP 092 November 24, 1997 Version 1.1 13* Application Note by Peter Alfke Summary This application note covers several related subjects: How does a Xilinx FPGA power up, and how does it react to powersupply glitches? Is there any danger of picking up erroneous data and configuration? What can be done to maintain
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XC2000,
XC3000,
XC4000,
XC5200
XC3000
XC4000
XC5200
8054 microcontroller
S8054 equivalent
S8054
XC2000
XC3000A
XC3000L
XC3100
XC4000
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Untitled
Abstract: No abstract text available
Text: HANBit HMN1M8D Non-Volatile SRAM MODULE 8Mbit 1,024K X 8-Bit , 36Pin-DIP, 5V Part No. HMN1M8D GENERAL DESCRIPTION The HMN1M8D Nonvolatile SRAM is a 8,388,608-bit static RAM organized as 1,048,576 bytes by 8 bits. The HMN1M8D has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited write
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36Pin-DIP,
608-bit
120ns
150ns
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HMNP16MM
Abstract: HMNP16MM-100 REQ64
Text: HANBit HMNP16MM Non-Volatile SRAM MODULE 16Mbyte 4,096K x 32Bit , PCI interface, (SMM) 5V Part No. HMNP16MM GENERAL DESCRIPTION The HMNP16MM Nonvolatile SRAM is a 16,777,216-byte static RAM organized as 8,388,608 words by 16 bits. The HMNP16MM has a self-contained lithium energy source provide reliable non-volatility coupled with the
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HMNP16MM
16Mbyte
32Bit)
HMNP16MM
216-byte
HMNP16MM-100
REQ64
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Untitled
Abstract: No abstract text available
Text: MR0A08B FEATURES • 3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Native non-volatility • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • Commercial and industrial temperatures
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MR0A08B
20-years
MR0A08B
576-bit
EST00183
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Untitled
Abstract: No abstract text available
Text: DESCRIPTION: The Dense-Pac 32K X 8S family consists of CM OS +5V 32K X 8 Electrically Eraseable Programmable Read-Only Memories EEPROM s . These EEPROM modules are ideal for applications which require low power consumption, non volatility and in-system reprogrammability. The endurance,
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OCR Scan
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deterE42568S-300I
DPE42568S-250M
DPE42568S-350M
DPE45128S-250C
DPE45128S-350C
DPE45128S-300I
DPE45128S-250M
DPE45128S-350M
DPE45129S-250C
DPE45129S-350C
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