K3050
Abstract: 2sk3050
Text: 2SK3050 Transistors 10V Drive Nch MOS FET 2SK3050 zExternal dimensions Unit : mm zStructure Silicon N-channel MOSFET CPT3 6.5 5.1 2.3 2.5 0.9 1.5 5.5 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS)
|
Original
|
2SK3050
K3050
K3050
2sk3050
|
PDF
|
XP134A02A1SR
Abstract: XP134A11A1SR XP134A1275SR XP135A1145SR
Text: XP134A02A1SR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.11Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package ◆ Two FET Devices built-in • Applications ■ General Description ■ Features The XP134A02A1SR is a P-Channel Power MOS FET with low on-state
|
Original
|
XP134A02A1SR
XP134A02A1SR
Vds10V
XP134A11A1SR
XP134A1275SR
XP135A1145SR
|
PDF
|
XP162A02D5PR
Abstract: XP162A11C0PR XP162A12A6PR sot89 fet XP162A11
Text: XP162A02D5PR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.45Ω MAX ◆ Ultra High-Speed Switching ◆ SOT-89 Package • Applications ■ General Description ■ Features The XP162A02D5PR is a P-Channel Power MOS FET with low on-state
|
Original
|
XP162A02D5PR
OT-89
XP162A02D5PR
OT-89
XP162A11C0PR
XP162A12A6PR
sot89 fet
XP162A11
|
PDF
|
Low Capacitance MOS FET
Abstract: Low Input Capacitance MOS FET fet n-channel pin configuration Pch MOS FET XP135A1145SR P Channel Ultra Low Gate Charge
Text: XP135A1145SR Power MOS FET ◆ N-Channel/P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance : 0.045Ω max Nch 0.110Ω max (Pch) ◆ Ultra High-Speed Switching ◆ SOP - 8 Package ◆ Two FET Devices Built-in • ● ● ● ■ General Description
|
Original
|
XP135A1145SR
XP135A1145SR
Vds10V
Low Capacitance MOS FET
Low Input Capacitance MOS FET
fet n-channel pin configuration
Pch MOS FET
P Channel Ultra Low Gate Charge
|
PDF
|
XP135A1145SR
Abstract: No abstract text available
Text: Power MOS FET ◆N-Channel/P-Channel Power MOS FET •Applications ◆DMOS Structure ●Notebook PCs ◆Low On-State Resistance : 0.045Ω max (Nch) ●Cellular and portable phones ●On-board power supplies 0.110Ω (max) (Pch) ◆Ultra High-Speed Switching
|
Original
|
XP135A1145SR
|
PDF
|
XP133A1145SR
Abstract: No abstract text available
Text: XP133A1145SR Power MOS FET ◆ N-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.045Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package ◆ Two FET Devices built-in • Applications ■ General Description ■ Features The XP133A1145SR is a N-Channel Power MOS FET with low on-state
|
Original
|
XP133A1145SR
XP133A1145SR
|
PDF
|
XP132A11A1SR
Abstract: No abstract text available
Text: XP132A11A1SR ◆ ◆ ◆ ◆ ◆ Power MOS FET P-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.11Ω max Ultra High-Speed Switching SOP - 8 Package • General Description ■ ● ● ● ● Applications Notebook PCs Cellular and portable phones
|
Original
|
XP132A11A1SR
XP132A11A1SR
|
PDF
|
XP133A0175SR
Abstract: No abstract text available
Text: XP133A0175SR Power MOS FET ◆ N-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.075Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package ◆ Two FET Devices built-in • Applications ■ General Description ■ Features The XP133A0175SR is a N-Channel Power MOS FET with low on-state
|
Original
|
XP133A0175SR
XP133A0175SR
|
PDF
|
XP134A11A1SR
Abstract: No abstract text available
Text: XP134A11A1SR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.11Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package ◆ Two FET Devices built-in • Applications ■ General Description ■ Features The XP134A11A1SR is a P-Channel Power MOS FET with low on-state
|
Original
|
XP134A11A1SR
XP134A11A1SR
|
PDF
|
XP134A01A9SR
Abstract: No abstract text available
Text: XP134A01A9SR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.19Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package ◆ Two FET Devices built-in • Applications ■ General Description ■ Features The XP134A01A9SR is a P-Channel Power MOS FET with low on-state
|
Original
|
XP134A01A9SR
XP134A01A9SR
|
PDF
|
SLA2402
Abstract: No abstract text available
Text: High Voltage Full Bridge Drive ICs SLA2402M Features External Dimensions unit: mm ● One Package Full Bridge Driver Consisted of High Voltage IC and Power MOS FETs (4 pieces) ● High Voltage Driver which accepts direct connection to the input signal line
|
Original
|
SLA2402M
SLA2402
|
PDF
|
XP132A1545SR
Abstract: No abstract text available
Text: XP132A1545SR ◆ ◆ ◆ ◆ ◆ Power MOS FET P-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.045Ω max Ultra High-Speed Switching SOP - 8 Package • General Description ■ ● ● ● ● Applications Notebook PCs Cellular and portable phones
|
Original
|
XP132A1545SR
XP132A1545SR
|
PDF
|
fkp330c
Abstract: 4600 fet mos n fet e B105 CF35
Text: N-Channel MOS FET FKP330C July. 2007 •Package-FM100 TO-3P Full Mold ■Features ●Low on-resistance ●Low input capacitance ●Avalanche energy guarantee ■Applications ●PDP driving ●High speed switching ■Equivalent circuit D (2) G (1) S (3)
|
Original
|
FKP330C
Package---FM100
T02-011EA-070614
fkp330c
4600 fet
mos n fet e
B105
CF35
|
PDF
|
SLA2403M
Abstract: SLA2403 full bridge gate driver
Text: High Voltage Full Bridge Drive IC SLA2403M Features External Dimensions unit: mm ● One Package Full Bridge Driver Consisted of High Voltage IC and Power MOS FETs (4 pieces) ● High Voltage Driver which accepts direct connection to the input signal line
|
Original
|
SLA2403M
SLA2403M
SLA2403
full bridge gate driver
|
PDF
|
|
SLA2402M
Abstract: SLA2402 vm85 VCC10A vm85a GL-115
Text: High Voltage Full Bridge Drive IC SLA2402M Features External Dimensions unit: mm ● One Package Full Bridge Driver Consisted of High Voltage IC and Power MOS FETs (4 pieces) ● High Voltage Driver which accepts direct connection to the input signal line
|
Original
|
SLA2402M
SLA2402M
SLA2402
vm85
VCC10A
vm85a
GL-115
|
PDF
|
XP132A01A0SR
Abstract: No abstract text available
Text: XP132A01A0SR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.105Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package • Applications ■ General Description ■ Features The XP132A01A0SR is a P-Channel Power MOS FET with low on-state
|
Original
|
XP132A01A0SR
XP132A01A0SR
|
PDF
|
XP161A01A8PR
Abstract: No abstract text available
Text: XP161A01A8PR Power MOS FET ◆ N-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.18Ω MAX ◆ Ultra High-Speed Switching ◆ SOT-89 Package • Applications ■ General Description ■ Features The XP161A01A8PR is a N-Channel Power MOS FET with low on-state
|
Original
|
XP161A01A8PR
OT-89
XP161A01A8PR
OT-89
|
PDF
|
SKP202
Abstract: No abstract text available
Text: N-Channel MOS FET SKP202 •Features March. 2007 ■Package-TO-263 ●Low on-resistance ●Low input capacitance ●Avalanche energy capability guaranteed ■Applications ●PDP driving ●High speed switching ■Equivalent circuit D 2 G (1) S (3) ■Absolute maximum ratings
|
Original
|
SKP202
Package---TO-263
PW100sduty
180HILp
T02-007EA-070227
SKP202
|
PDF
|
sanken
Abstract: No abstract text available
Text: N-Channel MOS FET FKP250A •Features June, 2007 ■Package-FM100 TO-3P Full Mold ●Low on-resistance ●Low input capacitance ●Avalanche energy capability guaranteed ■Applications ●PDP driving ●High speed switching ■Equivalent circuit D (2)
|
Original
|
FKP250A
Package---FM100
PW100sduty
T02-008EA-070531
sanken
|
PDF
|
FKP300A
Abstract: fkp300a equivalent sanken FKP300A SANKEN FKP300 sanken power transistor B105 CF35
Text: N-Channel MOS FET FKP300A •Features June, 2007 ■Package-FM100 TO-3P Full Mold ●Low on-resistance ●Low input capacitance ●Avalanche energy capability guaranteed ■Applications ●PDP driving ●High speed switching ■Equivalent circuit D (2)
|
Original
|
FKP300A
Package---FM100
T02-010EA-070531
FKP300A
fkp300a equivalent
sanken FKP300A
SANKEN
FKP300
sanken power transistor
B105
CF35
|
PDF
|
Fkp250a
Abstract: Switching N-Channel Power MOS FET 50a B105 CF35 FKP250A characteristics
Text: N-Channel MOS FET FKP250A •Features June, 2007 ■Package-FM100 TO-3P Full Mold ●Low on-resistance ●Low input capacitance ●Avalanche energy capability guaranteed ■Applications ●PDP driving ●High speed switching ■Equivalent circuit D (2)
|
Original
|
FKP250A
Package---FM100
T02-008EA-070531
Fkp250a
Switching N-Channel Power MOS FET 50a
B105
CF35
FKP250A characteristics
|
PDF
|
T02-010EA-070531
Abstract: B105 CF35 FKP300A fkp300a equivalent
Text: N-Channel MOS FET FKP300A •Features June, 2007 ■Package-FM100 TO-3P Full Mold ●Low on-resistance ●Low input capacitance ●Avalanche energy capability guaranteed ■Applications ●PDP driving ●High speed switching ■Equivalent circuit D (2)
|
Original
|
FKP300A
Package---FM100
T02-010EA-070531
T02-010EA-070531
B105
CF35
FKP300A
fkp300a equivalent
|
PDF
|
SOT89 093 CD
Abstract: mos sot-89 2g LF3A XP151A01C3MR XP151A03A7MR power mos thermal
Text: XP151A01C3MR ♦ ♦ ▲ ♦ Power MOS FET N-Channel Power MOS FET DMOS Structure . x n -x „ „ AV Low On-State Resistance: 0.3 30 MAX • • • ^ • # ♦ Ultra High-Speed Switching ♦ SOT-23 Package Applications Notebook PCs Cellular and portable phones
|
OCR Scan
|
XP151A01C3MR
OT-23
XP151A01C3MR
XP162A02D5PR
XP162A02D5PR
SOT89 093 CD
mos sot-89 2g
LF3A
XP151A03A7MR
power mos thermal
|
PDF
|
LD4A
Abstract: High-speed switching P-Channel mos ld3a
Text: XP131A0150SR Power MOS FET ♦ N-Channel Power MOS FET ♦ DMOS Structure • Applications • Notebook PCs ♦ Low On-State Resistance: 0.0 50 MAX ? Cellular and portable phones • On-board power supplies # Li.ion battery systems ♦ Ultra High-Speed Switching
|
OCR Scan
|
XP131A0150SR
XP131A0150SR
XP134A11A1SR
XP134A11A1SR
XP134A11A1
LD4A
High-speed switching P-Channel mos
ld3a
|
PDF
|