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    VOLTAGE SENSITIVE RESISTOR SIEMENS Search Results

    VOLTAGE SENSITIVE RESISTOR SIEMENS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B7PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    VOLTAGE SENSITIVE RESISTOR SIEMENS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BFP420 application notes 900MHz

    Abstract: SCT598-Package BFP420 application notes BFP420 BGC420 Q62702-G0092 500R 134fF IC LP7 3770E-01
    Text: BGC420 Self-Biased BFP420 l l l l l SIEGET25- Technology Small SCT598-Package Control Pin For Switching The Device Off Current Easy Adjustable By An External Resistor Voltage Independent Current 2V – 4.5V 8 7 6 5 2 1 3 4 VPW05982 ESD: Electrostatic discharge sensitive device, observe


    Original     		PDF BGC420 BFP420 SCT598-Package VPW05982 Q62702-G0092 SCT598 BGC420 BFP420 application notes 900MHz SCT598-Package BFP420 application notes BFP420 Q62702-G0092 500R 134fF IC LP7 3770E-01

    2Q394

    Abstract: rx 3152 BGC405 A12 marking ikr 251 50W rf power transistor 100MHz 500R BFP405 Q62702-G0091 TL18
    Text: BGC405 Self-Biased BFP405 l l l l l SIEGET25- Technology Small SCT598-Package Control Pin For Switching The Device Off Current Easy Adjustable By An External Resistor Voltage Independent Current 2V – 4.5V 8 7 6 5 2 1 3 4 VPW05982 ESD: Electrostatic discharge sensitive device, observe


    Original     		PDF BGC405 BFP405 SCT598-Package VPW05982 Q62702-G0091 SCT598 BGC405 2Q394 rx 3152 A12 marking ikr 251 50W rf power transistor 100MHz 500R BFP405 Q62702-G0091 TL18

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 2.1 Magneto Resistors Fundamentals Magneto resistors are magnetically influenced resistors of InSb/NiSb material which work according to the Gauss effect. The charge carriers which flow through the semiconductor material experience a sideways action in a traverse magnetic field by


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS IRM3000/3003/3015/3100 3 V Infrared Data Transceiver Preliminary Dimensions in inches mm APPLICATIONS • Wireless Computer and Peripheral Communications • Wireless Computer and Telephone Communications > Interactive TV and Remote Control IROataCOM


    OCR Scan     		PDF IRM3000/3003/3015/3100 IRM3015 IRM3000/3Q03/3015/3100 18-pln fl535t

    THX 230

    Abstract: No abstract text available
    Text: SIEMENS IRM6000/6002 Infrared Data Transceiver Prelim inary Dimensions in inches mm HttMOOO .360 <9.141 .059 (1.’50) (3.81) _ L Ö .101 i T 112(2.84) (4.09) .008 (0 .20) FEA TU RES • Sm all PackageSize: 4.3 m m x 4.1 m m x 9.4 m m • Com patible w M i IrD A Specifications


    OCR Scan     		PDF IRM6000/6002 IRM600Q/8002 THX 230

    ir led

    Abstract: No abstract text available
    Text: SIEMENS IRM6000/6002 INFRARED DATA TRANSCEIVER Preliminary A current limiting resistor should be used between the LED anode and M x See Table 1 for recom mended values. For operation at 2.7 V, the LED anode should be tied directly to Vc c Table 1. Operating Voltage VCq


    OCR Scan     		PDF IRM6000/6002 IRM6000/6002 fl23b32b ir led

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS IRM6000/6002 Infrared Data Transceiver P re lim in a ry Dimensions In inches mm FEATURES • Small Package Size: 4.3 mm x 4.1 m m x 9.4 m m • Compatible w ith IrDA Specifications • IrDA Data Rates up to 115.2 Kb/s • Wide Dynamic Range • Slim Package for Telephonic Applications


    OCR Scan     		PDF IRM6000/6002 18-pln fl535t

    IRF 1450

    Abstract: km 1667 km 1667 datasheet mmic marking code j
    Text: SIEMENS CMY 91 GaAs MMIC Datasheet * GaAs mixer with integrated IF-amplifier for mobile communication * Frequency range 0.8 GHz to 2.5 GHz * Very low power consumption 1 mA typ. * Single positive supply voltage * Operating voltage range: 2.7 to 6 V * Miniature package MW6 based on SOT23


    OCR Scan     		PDF Q62702-M9 01-coil; B82412-A3221-M 900MHz 1450MHz 1900MHz IRF 1450 km 1667 km 1667 datasheet mmic marking code j

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS CGY 31 GaAs MMIC Two-stage monolithic microwave IC MMIC amplifier All-gold metallization Chip fully passivated Operating voltage range: 3 to 6 V 50 Q input/output; R L in f t L o u t > 10 dB Gain: 18 dB at 1.6 GHz Low noise figure: 4 dB at 1.6 GHz


    OCR Scan     		PDF Q68000-A6887 EHT08101

    PMB2307

    Abstract: No abstract text available
    Text: SIEMENS PMB 2307R PLL-Frequency Synthesizer Preliminary Data CMOS 1C Features • • • • Low operating current consumption typically 3.5 mA High input sensitivity, high input frequencies (220 MHz) Extremely fast phase detector without dead zone Linearization of the phase detector output by current


    OCR Scan     		PDF 2307R 65-MHz PMB2307

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS CMY 91 GaAs MMIC • • • • • • GaAs mixer with integrated IF-amplifier for mobile communication Frequency range 0.8 GHz to 2.5 GHz Very low power consumption 1 mA typ. Single positive supply voltage Operating voltage range: 2.7 to 6 V Miniature package MW6 based on SOT23


    OCR Scan     		PDF Q62702-M9 S35b05 012241H 1900MHz D15E4E1

    LH1525

    Abstract: No abstract text available
    Text: LH1525 LH1Ç26 SIEMENS 1 Form A, Duali Foirn A High-Voltage Solid State Relays FEATURES d e s c r ip t io n Load Voltage Load Current ac/dc dc Typical Rqn Typical Operating Current ton/tof (max Cufrent Limit: ac/dc The LH1525 and LH1526 relays as SPST normaily.open switches


    OCR Scan     		PDF LH1525 TH1S26 LH1526 LH1525AT/AAB, LH1526AB/AAC 6G-72

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS PMB 2307R Table of Contents Page 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 O verview .2 Features. 2


    OCR Scan     		PDF 2307R

    "if amplifier" siemens

    Abstract: M2 MARKING SOT23 SSFF V1F p B82412-A3221-K B82412-A3471-K Q62702-M9 B82412-A3270-M IRF 1450
    Text: • û 2 3 5 b ü S □ □ cî ü7DD u aA s M M iu SIEMENS T23 ■ CMY 91 D a t a s h e e t * GaAs mixer with integrated IF-amplifier for mobile communication * Frequency range 0.8 GHz to 2.5 GHz * Very low power consumption 1 mA typ. * Single positive supply voltage


    OCR Scan     		PDF S235bà Q62702-M9 900MHz 1450MHz a235b05 1900MHz fi235b05 "if amplifier" siemens M2 MARKING SOT23 SSFF V1F p B82412-A3221-K B82412-A3471-K B82412-A3270-M IRF 1450

    PMB2307R

    Abstract: PMB2307 SIEMENS 2306 DECT siemens dect pmb 30MHZ "Mobile Communication ICs" PMB2307 equivalent
    Text: SIEMENS PMB 2307R PLL-Frequency Synthesizer Preliminary Data CMOS 1C Features • • • • Low operating current consumption typically 3.5 mA High input sensitivity, high input frequencies (220 MHz) Extremely fast phase detector without dead zone Linearization of the phase detector output by current


    OCR Scan     		PDF 2307R 65-MHz detector70 PMB2307R PMB2307 SIEMENS 2306 DECT siemens dect pmb 30MHZ "Mobile Communication ICs" PMB2307 equivalent

    PSB4400P

    Abstract: PSB4400-P power supply luna siemens power supply luna 2 siemens Q67000-A6074 pj 75 sx 34 ITP0449J ITP04706 P-DIP-18 P-DSO-20
    Text: bSE D • ÖSBSbüS Ü Ü S n 2 7 S3S « S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF Standard Speech Circuit SSC PSB 4400-P;-T Prelim inary Data Bipolar 1C Features • • • • • • • • • • • • Operation down to a DC line voltage of 1.6 V


    OCR Scan     		PDF GSn27 4400-P PSB4400P PSB4400-P power supply luna siemens power supply luna 2 siemens Q67000-A6074 pj 75 sx 34 ITP0449J ITP04706 P-DIP-18 P-DSO-20

    of mosfet BUZ 384

    Abstract: simple SL 100 NPN Transistor leistungstransistoren ANALOG DEVICES bar code on the lable test transistors Siemens Dioden fgs npn
    Text: SIEMENS Technische Angaben Technical Information 1 Übersicht 1 Overview 1.1 SIPMOS-Leistungstransistoren 1.1 SIPMOS Power Transistors Leistungstransistoren im Bereich 5 0 V . 1000 V und 10 m fi . 8 Q Power transistors in the 50 V to 1000 V and 10 mQ to 8 Q range


    OCR Scan     		PDF SIL00001 SIL00002 MILSTD-883, of mosfet BUZ 384 simple SL 100 NPN Transistor leistungstransistoren ANALOG DEVICES bar code on the lable test transistors Siemens Dioden fgs npn

    GMA marking

    Abstract: No abstract text available
    Text: SIEMENS BFG 135A NPN Silicon RF Transistor • For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 G H z at collector currents from 70mA to 130mA • Power amplifiers for D ECT and PCN systems • Integrated emitter ballast resistor


    OCR Scan     		PDF 130mA BFG135A Q62702-F1322 OT-223 900MHz IS211 GMA marking

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BXY 44P HiRel Silicon PIN Diode Features • HiRel Discrete and Microwave Semiconductor • Current controlled RF resistor for RF attenuators and switches • High reverse voltage • Matched diode - pair • Hermetically sealed microwave package @sa qualified


    OCR Scan     		PDF 44P-FP de/semiconductor/products/35/35 de/semiconductor/products/35/353

    marking code AC sot 23-5

    Abstract: marking BFG
    Text: SIEMENS BFG 235 NPN Silicon RF Transistor • For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at collector currents from 120mA to 250mA • Power amplifiers for DECT and PCN systems • Integrated emitter ballast resistor


    OCR Scan     		PDF 120mA 250mA OT-223 BFG235 Q62702-F1432 900MHz marking code AC sot 23-5 marking BFG

    BFG235

    Abstract: No abstract text available
    Text: SIEMENS BFG 235 NPN Silicon RF Transistor • For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at collector currents from 120mA t<5 250mA • Power amplifiers for DECT and PCN systems • Integrated emitter ballast resistor


    OCR Scan     		PDF 120mA 250mA Q62702-F1432 BFG235 OT-223 fi535b05 900MHz fl235bD5 BFG235

    Siemens pulse sequence

    Abstract: power supply siemens s5 Siemens diode Ssi
    Text: SIEMENS mmmmmmwm•■tWhP CGY 191 GaAs MMIC • • • • • Dual mode power amplifier for CDMA /TDMA portable cellular phones 29 dBm linear output power PAE=40% typ. Fully integrated 2 stage amplifier Power ramp control Input matched to 50 ohms, simple output match


    OCR Scan     		PDF 62702G Siemens pulse sequence power supply siemens s5 Siemens diode Ssi

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFG135A NPN Silicon RF Transistor • For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at collector currents from 70mA to 130mA • Power amplifiers for DECT and PCN systems • Integrated emitter ballast resistor


    OCR Scan     		PDF BFG135A 130mA BFG135A Q62702-F1322 OT-223 GlE17b4 900MHz 0S35bOS D1217b5

    Marking code 44t

    Abstract: No abstract text available
    Text: SIEMENS BXY44 HiRel Silicon PIN Diode Features • HiRel Discrete and Microwave Semiconductor • Current controlled RF resistor for RF attenuators and switches • High reverse voltage • Hermetically sealed microwave package esa qualified • ESA/SCC Detail Spec. No.: 5513/030


    OCR Scan     		PDF BXY44 44-T1 44-T2 44-FP Marking code 44t