IRC 265
Abstract: DP63950 DP83950BVQB DP83950BVQB-MPC MNDP83950B-VQB T101 T102 T103 T104 T105
Text: MICROCIRCUIT DATA SHEET Original Creation Date: 10/24/94 Last Update Date: 02/24/99 Last Major Revision Date: 10/24/94 MNDP83950B-VQB REV 0B0 REPEATER INTERFACE CONTROLLER General Description The "RIC" may be used to implement an IEEE 802.3 multiport repeater unit including the
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MNDP83950B-VQB
VUL160ARB
28x28x3
160LD
M0003282
MNDP83950B-VQB,
IRC 265
DP63950
DP83950BVQB
DP83950BVQB-MPC
T101
T102
T103
T104
T105
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wiring VDG 13 relay
Abstract: Battery Managements wiring VDG 14 relay CI 3060 elsys 1N4002 1N6282 1N6287 MC33121 MC33121FN MC33121P
Text: MOTOROLA Order this document by MC33121/D SEMICONDUCTOR TECHNICAL DATA MC33121 Low Voltage Subscriber Loop Interface Circuit SLIC Thin Film Silicon Monolithic Integrated Circuit • • • • • • • • • • • P SUFFIX PLASTIC PACKAGE CASE 738
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MC33121/D
MC33121
MC33121
refere20
MC33121/D*
wiring VDG 13 relay
Battery Managements
wiring VDG 14 relay
CI 3060 elsys
1N4002
1N6282
1N6287
MC33121FN
MC33121P
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wiring VDG 13 relay
Abstract: MC33120 TIP 22 transistor MC33120P Battery Managements 20k301 darlington circuit tip 42 HB205 1N6290A MC33120FN
Text: Order this data sheet by MC33120/D MOTOROLA MC33120 SEMICONDUCTOR TECHNICAL DATA Subscriber Loop Interface Circuit SUBSCRIBER LOOP INTERFACE CIRCUIT SLIC The MC33120 is designed to provide the interface between the 4-wire side of a central office, or PBX, and the 2-wire subscriber line. Interface
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MC33120/D
MC33120
MC33120
wiring VDG 13 relay
TIP 22 transistor
MC33120P
Battery Managements
20k301
darlington circuit tip 42
HB205
1N6290A
MC33120FN
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wiring VDG 13 relay
Abstract: Battery Managements long range gold detector circuit diagram PIN CONFIGURATION IC RT 3060 1N4002 1N6282 1N6287 MC33121 MC33121FN MC33121P
Text: MOTOROLA Order this document by MC33121/D SEMICONDUCTOR TECHNICAL DATA MC33121 Low Voltage Subscriber Loop Interface Circuit SLIC Thin Film Silicon Monolithic Integrated Circuit • • • • • • • • • • • P SUFFIX PLASTIC PACKAGE CASE 738
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MC33121/D
MC33121
MC33121
refere12
wiring VDG 13 relay
Battery Managements
long range gold detector circuit diagram
PIN CONFIGURATION IC RT 3060
1N4002
1N6282
1N6287
MC33121FN
MC33121P
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vqb 201
Abstract: VQB201 VQB 28 E vqb 27 vqb 200 FUNKAMATEUR-Bauelementeinformation VQB200 Funkamateur ma702 vqb 200 d
Text: FUNKAMATEUR-Bauelementeinformation VQB 200 VQB 201 Einstellige Lichtschachtbauelemente grünstrahlend, Zeichenhöhe 12,7 mm, 16 Segmente und Dezimalpunkt, mit Diodenchips auf GaP-Basis Hersteller: VEB Werk für Fernsehelektronik Berlin TGL 42170 Kurzcharakteristik
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2n4125 transistor
Abstract: 2N4125
Text: TOSHIBA 2N4125 Transistor Silicon PNP Epitaxial Type For General Purpose Switching and Amplifier Applications Features • Low Leakage Current - Iqbo ~ -50nA Max. @ Vqb _ -20V - l(£go ~ -50nA (Max.) @ V^g = -3V • Low Saturation Voltage - VCE(sat) = -0.4V (Max.) @ lc = -50mA, lB = -5mA
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2N4125
-50nA
-50mA,
2N4123
2n4125 transistor
2N4125
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cb 10 b 60 kd
Abstract: 2N4126
Text: TOSHIBA 2N4126 Transistor Silicon PNP Epitaxial Type For General Purpose Switching and Amplifier Applications Features • Low Leakage Current - Iqbo -50nA Max. @ Vqb _ -20V - I^bo = -50nA (Max.) @ V^g = -3V • Low Saturation Voltage - VQE(satj = -0.4V (Max.) @ lc = -50mA, lB = -5mA
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2N4126
-50nA
-50mA,
2N4124
cb 10 b 60 kd
2N4126
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2n5551 transistor
Abstract: No abstract text available
Text: TOSHIBA 2N5551 Transistor Unit in mm Silicon NPN Epitaxial Type For General Purpose Switching and Amplifier Applications 0 45 Features • High Collector Breakdown Voltage jtT 0.35MAX. IB 0 45 I " Vcbo = 180V, VCE0 = 160V • Low Leakage Current I - Iqbo ~ 50nA Max. @ Vqb = 120V
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2N5551
35MAX.
2n5551 transistor
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NPN MATCHED PAIRS
Abstract: NPN pnp MATCHED PAIRS 5121 M DI4044 DI-2060
Text: HIGH GAIN - SMALL SIGNAL - NPN - MATCHED PAIRS mV Max. •>FEl/l<FE2 Diff. @ lc“ 10 /iA I e“ 0 V ebo Volts Min. @ I e*“ 1 0 / xA lc=0 @ 60 7 Dl 4100 4879 5.0 0.85 to 1.0 55 55 7 By Dl 4045 4880 5.0 0.8 to 1.0 45 45 7 0.1 @ Vqb = 30 Its Dl 4045-1 10.0
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DI-2060
100/xA
Ie-10/xA
100pA
Ie-10/Ã
500mA
NPN MATCHED PAIRS
NPN pnp MATCHED PAIRS
5121 M
DI4044
DI-2060
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bvoe
Abstract: TSC* 7 VQB 28 E
Text: TELEDYNE COMPONENTS 3bE D ITSC 3^171,02 QGG7Ô14 7 WTELEDYNE COMPONENTS SD5400 SD5401 SD5402 QUAD DMOS FET ANALOG SWITCH ARRAYS FEATURES APPLICATIONS • ■ ■ ■ ■ ■ Low Interelectrode Capacitances — Analog Input.3.5 pF Typ
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SD5400
SD5401
SD5402
107dB@
SD5400.
SD5401
4-250C
bvoe
TSC* 7
VQB 28 E
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M116
Abstract: 2M116
Text: Üï E SOLID STATE » E | 3 Ö 7 S D 0 1 DüllDSl 2 |" M116 M116 Diode Protected N-Channel Enhancement Mode MOSFET General Purpose Amplifier FEA TU R ES DEVICE SCHEM ATIC • Low Iq s s • Integrated Zener Clamp for Gate Protection PIN CONFIGURATION A B S O LU T E MAXIMUM RATINGS
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307S0Ã
00110S1
10sec)
M116
2M116
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Untitled
Abstract: No abstract text available
Text: SIEMENS SMBTA 42 NPN Silicon Transistor for High Voltages • High breakdown voltage • Low collector-em itter saturation voltage • C om plem entary types: SM BTA 92 PNP Type Marking Ordering Code Pin Configuration SM BTA 42 s1D Q 68000-A6482 1 =B 2=E
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68000-A6482
OT-23
Jan-22-1999
P00839
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G119BL
Abstract: No abstract text available
Text: V I I -j Q I «7 f r Siliconix incorporated Monolithic 6-Channel Enhancement-type MOSFET Switch FEATURES BENEFITS APPLICATIONS • • • Differential Input Analog Signal Switching • Multiplexing • Designed to Operate with D125, D129 and D139 Integrated MOSFET for
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Untitled
Abstract: No abstract text available
Text: SIEMENS PZTA 92 PNP Silicon High Voltage Transistor • High breakdown voltage • Low collector-em itter saturation voltage • C om plem entary type: PZTA 42 NPN Type Marking Ordering Code PZTA 92 PZTA 92 Q 62702-Z2037 Pin Configuration 1 =B 2=C Package
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62702-Z2037
OT-223
Jan-22-1999
100MHz
EHP00734
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Untitled
Abstract: No abstract text available
Text: SIEMENS PZTA 42 NPN Silicon High Voltage Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: PZTA 92 PNP Type Marking Ordering Code Pin Configuration PZTA 42 PZTA 42 Q62702-Z2035 1=B 2=C Package 3=E
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Q62702-Z2035
OT-223
Jan-21-1999
100MHz
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21134 transistor
Abstract: RF1029 21134 case 244c-01 21134 npn RF NPN POWER TRANSISTOR 3 GHZ 5w
Text: MOTOROLA SC XSTRS/R F 4bE MOTOROLA •I D ■ b3b75S4 O D 'îSIS b _ SEMICONDUCTOR 7 HNOTb 7 ^3 3 ' 0 5 TECHNICAL DATA The RF Line UHF P o w e r T ran sisto r . . . d e sig n e d p rim a rily fo r w id e b a n d , la rg e -sig n a l o u tp u t a n d d riv e r a m p lifie r stages to
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b3b7254
244C-01,
21134 transistor
RF1029
21134
case 244c-01
21134 npn
RF NPN POWER TRANSISTOR 3 GHZ 5w
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Untitled
Abstract: No abstract text available
Text: SIEMENS SMBTA 92 PNP Silicon High Voltage Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 42 NPN Type Marking Ordering Code Pin Configuration SMBTA 92 s2D Q68000-A6479 1=B 2=E Package 3=C SOT-23
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Q68000-A6479
OT-23
Jan-22-1999
100MHz
EHP00879
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Untitled
Abstract: No abstract text available
Text: ¿888888888 |pM iwiHBBffi sm sssBP e .rfHHHHHHHHMh. itittnnnnn hhhhhhk-. ><>niftBHhr D at a S h e e t No. 2 N 2 8 5 7 m o% #f 1 l $ 1 1 Ic I ^88888 id L SEMICONDUCTORS G eneric Part Num ber: 2N2857 Type 2N2857 G eom etry 0011 Polarity NPN Qual Level: J A N -J A N S
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2N2857
MiL-PRF-19500/343
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TRANSISTOR S1d
Abstract: AX 1101
Text: SIEMENS SMBTA 42M NPN Silicon High-Voltage Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 92M PNP m h Q62702-A1243 CO II s1D o SMBTA 42M Pin Configuration PO II Marking Ordering Code CD Type
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Q62702-A1243
SCT-595
EHP00844
TRANSISTOR S1d
AX 1101
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Perm
Abstract: No abstract text available
Text: SIEMENS BCR 162W PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, drivere circuit Built in bias resistor R-|=4.7kQ, R2=4.7kQ Type Marking Ordering Code Pin C onfiguration BCR 162W W Us UPON INQUIRY 1=B Package 2=E 3=C SOT-323
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OT-323
Nov-26-1996
ov-26-1996
Perm
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PDF
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2N2219 transistor
Abstract: DN2219A VES-50 volumax C2N2907a
Text: This TRANSISTOR CHIPS ö M O 1 Material MEDIUM CURRENT PNP •Z. 100% Probe Tested to These Parameters @ 25°C Copyrighted n FE VcBO Volts Min. @lc = 10mA @VCE= 10V IfflQ ■ By 1.0mA o»ic 10mA 150mA 2N2218/21 25 MIN 35 MIN 40120 2N2218A/21A 25 MIN 35 MIN
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2n2218/21
2n2218a/21a
2n2219/22
2n2219a/22a
dn2219a/22a
150mA
150mA
p2907a
100mA
100jiA
2N2219 transistor
DN2219A
VES-50
volumax
C2N2907a
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PDF
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2SA1321
Abstract: 2SC3334
Text: TO SH IBA 2SA1321 2 S A 1 321 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS. COLOR TV CHROMA OUTPUT APPLICATIONS. • • • 5.1 MAX High Voltage : V c e O = —250V Low Cre : 1.8pF (Max.)
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2SA1321
--250V
2SC3334
O-92MOD
2SA1321
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MQ918
Abstract: MD918
Text: MOT OROL A SC XSTRS/R F 4bE b3b?SSM D QQR2fl72 7 «nO Tb ~ 7^¥3iZ S MOTOROLA SEMICONDUCTOR! TECHNICAL DATA h A ä MD918HX, HXV (DUAL) MD918FHXV (DUAL) MHQ918HX, HXV (QUAD) MMCM918HXV (SINGLE) MQ918HXV (QUAD) NPN Silicon Duai/Quad Small-Signal Transistors
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QQR2fl72
MD918HX,
MD918FHXV
MHQ918HX,
MMCM918HXV
MQ918HXV
MD918
b3b72S4
T-43-25
MD918,
MQ918
MD918
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2SA1321
Abstract: 2SC3334
Text: TO SH IBA 2SA1321 2 S A 1 321 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS. COLOR TV CHROMA OUTPUT APPLICATIONS. • 5.1 MAX. High Voltage : V c e O = —250V : 1.8pF (Max.) Low Cre Complementary to 2SC3334
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2SA1321
--250V
2SC3334
O-92MOD
2SA1321
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