VQE 11E Search Results

VQE 11E Price and Stock

Filter by Manufacturer


C&K EP11SD1AVQE Pushbutton Switches OFF-(ON) SPST
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	EP11SD1AVQE		38			1 $8.55 10 $7.96 100 $6.18 1000 $5.96 10000 $5.95	Buy Now
C&K ET01M3D1AVQE Toggle Switches Toggle
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	ET01M3D1AVQE		31			1 $12.46 10 $11.26 100 $9.81 1000 $9.28 10000 $9.28	Buy Now
C&K ET01MD1AVQE Toggle Switches Sealed Subminiature Toggle Switch
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	ET01MD1AVQE					1 $10.98 10 $10.67 100 $10.15 1000 $9.93 10000 $9.93	Get Quote
C&K ET02MD1AVQE Toggle Switches
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	ET02MD1AVQE					1 $11.11 10 $10.83 100 $8.54 1000 $7.62 10000 $7.44	Get Quote
C&K ET05MD1AVQE Toggle Switches Toggle
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	ET05MD1AVQE					1 $11.93 10 $10.98 100 $10.18 1000 $9.5 10000 $9.5	Get Quote

Find more VQE 11E price and stock on Findchips.com

VQE 11E Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
6c2 transistor Abstract: No abstract text available Text: SIEMENS SMBT 3906S PNP Silicon Switching Transistor Array 4 High DC current gain: 0.1mA to 100mA Low collector-emitter saturation voltage Two galvanic internal isolated Transistors with high matching in one package Complementary type: SMBT 3904S (NPN) 2	OCR Scan	PDF	100mA 3904S 3906S VPS05604 3906S Q62702-A1202 EHA07173 OT-363 EHP00767 EHP00770 6c2 transistor
Untitled Abstract: No abstract text available Text: SIEMENS SMBT 3904PN NPN Silicon Switching Transistor Array Preliminary data • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package M a r k i n g on S O T - 3 6 3 p a c k a g e	OCR Scan	PDF	3904PN 3904PN Q62702-C OT-363
846PN Abstract: VQE 11E Text: SIEMENS BC 846PN NPN/PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package Tape loading orientation	OCR Scan	PDF	846PN EHA07193 846PN Q62702-C2537 OT-363 VQE 11E
2SB673 Abstract: 2SB674 2sb675 Text: SILICON PNP TRIPLE DIFFUSED TYPE DARLINGTON POWER 2SB673,2SB674 2SB675 INDUSTRIAL APPLICATIONS U nit in mm HIGH POW ER SW ITCHING APPLICATIONS. H A M M E R DRIVE, PULSE M O T O R DRIVE APPLICATIONS. 10. :^MA X • • • 03.610.3 High DC Current Gain : hFE = 2000 (Min.) (V c e = -3 V , I c = -3 A )	OCR Scan	PDF	2SB673 2SB674 2SB675 2SD633, 2SD634 2SD635. 2SB675
3cs transistor Abstract: marking 3cs 6c2 transistor PS056 Text: SIEMENS BC 857S PNP Silicon AF Transistor Array • For AF input stages and driver applications A • High current gain 5_ O ^ • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package	OCR Scan	PDF	PS05604 Q62702-C2373 OT-363 Mav-12-1998 3cs transistor marking 3cs 6c2 transistor PS056
Marking 3ds sot Abstract: transistor 5B1 BR 101 Transistor Text: SIEMENS BC856S PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low colfector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package Fi FI FI U	OCR Scan	PDF	BC856S Q62702-C2532 OT-363 EHP00382 Marking 3ds sot transistor 5B1 BR 101 Transistor
2SB1187 Abstract: 2SD1761 2SB1187 transistor Text: ROHM CO LTD - 4QE D 7 A 2 A CH C] ODDSSfll $ / T ransistors h "7 > v 2SB1187 T '-3 '1 -Icl ' 2SB1137 3 HRHM l& J ljjS lt^ iiiiiffl/L o w Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor • W fiT H iH /D im e n s io n s U n it: mm • 1) Pc = 3 0 W (T c = 2 5 ”C)	OCR Scan	PDF	2SB1187 2SD1761t 2SD1761. O-22QFP 2SD1761 2SB1187 transistor
3904S Abstract: wi fi marking code transistor HK Text: SIEMENS SMBT 3904S NPN Silicon Switching Transistor Array 4 • High DC current gain: 0.1mA to 100mA 5 • Low collector-emitter saturation voltage 6 ^ ^ • Two galvanic internal isolated Transistors with high matching in one package • Complementary type: SM BT 3906S (PNP)	OCR Scan	PDF	3904S 100mA 3906S VPS05604 EHA07178 Q62702-A1201 OT-363 3904S wi fi marking code transistor HK
MG75Q2YS1 Abstract: 2108a Text: MG75Q2YS1 SIL IC O N N C H A N N E L IG B T Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 4 - F A S T - O N - T A B # ! 10 • High Input Impedance • High Speed: t f = 0 . 5us Max. t r r =0* s ( M a x . ) • Low S a tu ra tio n V oltage: Vcg(sat)=4.0V(M ax.)	OCR Scan	PDF	MG75Q2YS1 11ECO MG75Q2YS1 2108a
2969a Abstract: 2SC4269 marking JT NF 948 Text: O rd e rin g n u m b e r : EN 2969A 2 SC4 2 69 N0.2969A NPN Epitaxial Planar Silicon Transistor i VHF Converter, Local Oscillator Applications F e a tu re s • High power gain : PG = 15dB typ f= 0.4GHz •High cutoff frequency: fx= 1.2GHz typ A bsolute M axim um R atings a t Ta = 25°C	OCR Scan	PDF	2SC4269 2969a 2SC4269 marking JT NF 948
CT7605 Abstract: vbe 12v, vce 600v NPN Transistor Westcode Darlington 30A darlington NPN 600V 50a transistor Text: WESTCODE SEMICONDUCTORS 1TE D ìto tiss G D G ain 1 r - S 3 -is-. Technical Publication WESTCODE SEMICONDUCTORS CT7605 Issue 3 . July 1985 NPN POWER TRANSISTOR CT7605 I K \ Ratings POWERSWITCH 600 VOLTS 250 AM PERES Fast Switching V CEV 600V V CEO SUS 500V	OCR Scan	PDF	CT7605 545kgfÂ 100kgf 47nux 100mA lc200A CT7605 vbe 12v, vce 600v NPN Transistor Westcode Darlington 30A darlington NPN 600V 50a transistor
bcy580 Abstract: BCY590 transistor h21e SCHEMA BCY59 BCY 59 Text: *BCY 58 BCY59 NPN SILICON TRANSISTOR TRANSÌSTOR NPN S ILIC IU M Compì, of BCY 78 and BCY 79 Preferred device Dispositif recommandé • For switching and amplifier - Pour com m utation et am plification V CEO 32 V 45 V BCY 58 •c 200 mA BCY 59 Maximum power dissipation	OCR Scan	PDF	BCY59 lB2ai10mA bcy580 BCY590 transistor h21e SCHEMA BCY59 BCY 59
Untitled Abstract: No abstract text available Text: PD- 9.1077 International iör Rectifier IRGPC40K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features • Short circuit rated - 10ps @ 125°C, V q e = 1 5 V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz	OCR Scan	PDF	IRGPC40K C-889 O-247AC C-890
BC 247 b transistor Abstract: C558B transistor BC 247 transistor BC 245 bc 558 equivalent bc560 bc556b equivalent BC 247 Transistor - BC 547, CL 100 transistor 557 b Text: - 25C D • Ô235b05 O O O m ^ b □ H S I E 6 - Q PNPSiliconTransistors B C 5 5 6 -B C 5 6 0 ' SIEMENS AKTIENGESELLSCHAF- 2 % - 2 . 1 for AF input and driver stages BC 556, BC 557, BC 558, BC 559, and BC 560 are epitaxial PNP silicon Planartransistors in	OCR Scan	PDF	235b05 BC556' BC556VI BC556A BC556B BC5571 BC557VI BC557A BC557B BC5581 BC 247 b transistor C558B transistor BC 247 transistor BC 245 bc 558 equivalent bc560 bc556b equivalent BC 247 Transistor - BC 547, CL 100 transistor 557 b

Untitled Abstract: No abstract text available Text: HE D I 4Ö 554 5 2 ÛQQflSS2 1 \| INTERNATIONAL Data Sheet No. PD-9.324N RECTIFIER INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRF820 IRFSS1 IRFS22 IRF823 N-CHANNEL 500 Volt, 3.0 Ohm HEXFET TO-220AB Plastic Package	OCR Scan	PDF	IRF820 IRFS22 IRF823 O-220AB C-307 IRF820, IRF821, IRF822, IRF823 C-308
IRF510 application note Abstract: irf511 VQE22 Gate Drive circuit for irf510 VQE 22 N0540 AN975 IRF510 Text: HE 0 \| MÛS54S2 0 0 0 0 4 3 4 3 \| Data Sheet No. PD-9.325J 7 INTERNATIONAL R E C T I F I E R * 7 INTERNATIONAL RECTIFIER 7 - / / I«R REPETITIVE AVALANCHE AND dv/dt RATED* LOWER ON STATE RESISTANCE, 175°C OPERATING TEMPERATURE IRF510 IRF511 IRF5ÌS IRF513	OCR Scan	PDF	S54S2 IRF510 IRF511 IRF513 O-220AB C-189 IRF510, IRF511, IRF512, IRF513 IRF510 application note VQE22 Gate Drive circuit for irf510 VQE 22 N0540 AN975
Untitled Abstract: No abstract text available Text: RC4391 ?ST73tiG O O Oböfll T • f - RAYTHEON/ SEMICONDUCTOR RC4391 Inverting and Step-Down Switching Regulator The 4391 complements the other Raytheon switching regulator 1C, the RC4190. The 4190 is dedicated to step-up VOUT > VIN applica tions, while the 4391 was designed up for	OCR Scan	PDF	RC4391 ST73tiG RC4190. 100pF
b342d Abstract: information applikation applikation heft mikroelektronik Heft 12 information applikation mikroelektronik Transistoren DDR VEB mikroelektronik "information applikation" mikroelektronik Heft 10 ITT transistoren Text: m n t k if ^ s j e le lK t e n a r iH - c g\|B Information Applikation in n f B = a n iis ö lH W b n a n lK Information Applikation Heft: 28 Transistorarrays Iweb Halbleiterwerk frankfurt/oder \| betrieb im veto kombinet mikroelektronik KAMMER DER TECHNIK Bezirksvorstand Frankfurt/O.	OCR Scan	PDF
TRANSISTOR tip122 CHN 949 Abstract: E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175 Text: A lph an u m eric Index and C ross R eference 1 S elector G uide 2 D ata Sheets 3 Leadform and • M ounting H ardw are m A pp lications Literature 5 Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad, TMOS, Thermowatt, Unibloc, and Uniwatt are trademarks of Motorola Inc.	OCR Scan	PDF	38v01 TRANSISTOR tip122 CHN 949 E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175
transistors BC 557C Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555 Text: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and	OCR Scan	PDF
TIS43 Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent Text: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.	OCR Scan	PDF	2S301 BS9300-C-598 2S305 BS9300-C-366 2S307 2S322 CV7396 BS9300-C-396 CV7647 BS9300-C-647 TIS43 equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
70H40 Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©	OCR Scan	PDF	2SA1162 2SA1163 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 70H40 transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
3866S Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM	OCR Scan	PDF
catalogue des transistors bipolaires de puissance Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91 Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM	OCR Scan	PDF

Privacy Settings

VQE 11E Search Results

VQE 11E Price and Stock

C&K EP11SD1AVQE

C&K ET01M3D1AVQE

C&K ET01MD1AVQE

C&K ET02MD1AVQE

C&K ET05MD1AVQE

VQE 11E Datasheets Context Search

6c2 transistor

Untitled

846PN

2SB673

3cs transistor

Marking 3ds sot

2SB1187

3904S

MG75Q2YS1

2969a

CT7605

bcy580

Untitled

BC 247 b transistor

Untitled

IRF510 application note

Untitled

b342d

TRANSISTOR tip122 CHN 949

transistors BC 557C

TIS43

70H40

3866S

catalogue des transistors bipolaires de puissance