VPI05
Abstract: IGBT SGP15N60
Text: SIEMENS SGP15N60 P rulim inary data IGBT • Low forward voltage drop r / • High switching speed VPI05I55 • Low tail current 1 • Latch-up free • Avalanche rated Pin 1 Pin 2 G Pin 3 E C Type ^CE h Package Ordering Code SGP15N60 600V 15A TO-220 AB Q67040-A . . . .
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SGP15N60
SGP15N60
200//H,
VPI05I55
Q67040-A
O-220
BUP602D
Apr-08-1998
GPT05155
VPI05
IGBT SGP15N60
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Untitled
Abstract: No abstract text available
Text: FZ 400 R 06 KL 2 Transistor Transistor Thermische Eigenschaften Thermal properties RthJC DC, pro Baustein / per module 0,089 °C/W RthCK pro Baustein / per module 0,03 Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Maximum rated values
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00R600KF3
34G3SR7
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Untitled
Abstract: No abstract text available
Text: PD -9.1689 International IGR Rectifier IRG4IBC20KD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT • High switching speed optimized for up to 25kHz With lOW V C E o n • Short Circuit Rating 10ps @ 125°C, Vge = 15V
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IRG4IBC20KD
25kHz
T0-220
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Untitled
Abstract: No abstract text available
Text: FF 400 R 06 KL 2 Transistor Thermische Eigenschaften Transistor Elektrische Eigenschaften Thermal properties 0,0345°C/W 0,069 °C/W 0,02 °C/W 0,04 °C/W DC, pro B a u ste in /p e r module DC, pro Zweig /p e r Arm pro Baustein / per module Electrical properties
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PWWR60CKF6
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Untitled
Abstract: No abstract text available
Text: I . I P D -5038 International I@R Rectifier CPV 363M 4F preliminary IGBT SIP MODULE Features • • • • Fast IGBT Fully isolated printed circuit board mount package Switching-loss rating includes all "tail” losses HEXFRED soft ultrafast diodes Optimized for medium operating 1 to 10 kHz
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360Vdc,
S5452
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Untitled
Abstract: No abstract text available
Text: FF 200 R 06 KL 2 Transistor Transistor Thermische Eigenschaften RfhJC Elektrische Eigenschaften Electrical properties Hochstzulässige W erte Maximum rated values RthCK V ces 600 V Ic 200 A Thermal properties DC, pro Baustein / per module DC, pro Baustein / per module
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2Q0R06KL2/2
34G32T7
D0G2047
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Untitled
Abstract: No abstract text available
Text: International IQR Rectifier PD - 9.1448A IRG4BC20U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter
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IRG4BC20U
O-22QAB
100eters
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Untitled
Abstract: No abstract text available
Text: PD - 9.1583A International I R Rectifier IR G 4 P C 5 0 K PR ELIM IN A R Y Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tSc =1 Ops, @ 360V VCE Start , Tj = 125°C,
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485S4S2
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Untitled
Abstract: No abstract text available
Text: PD - 9 .1 4 5 5 A International I R Rectifier IRG4BC40S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • S ta n d a rd : O p tim ize d fo r m in im u m saturation Vces = 600V v o lta g e an d low operating fre q u e n c ie s < 1 kH z
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IRG4BC40S
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transistor cq 529
Abstract: 2SC5245 51842 CQ 734 G TRANSISTOR cq 802
Text: Ordering number:EN 5184A SAMO N0.5184A i 2SC5245 NPN Epitaxial Planar Silicon Transistor UHF to S-Band Low-Noise Amp, OSC Applications Features • Low noise : NF=0.9dB typ f= 1GHz . : NF = 1.4dB typ (f = 1.5GHz). • High gain : I S21e I 2= lOdB typ (f= 1.5GHz).
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2SC5245
transistor cq 529
51842
CQ 734 G
TRANSISTOR cq 802
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IRGPC46
Abstract: 10a 100v bipolar transistor mosfet induction heater S101 SS452 VQE 21 d
Text: INTERNATIONAL RECTIFIER 4055452 OOlOba? 2 2bE D Data Sheet No. PD-9.663 INSULATED GATE BIPOLAR TRANSISTOR T- 3 °[ -03 International g*»]Rectifier IRGPC46 BOOV, BO A FEATURES 600V, 60A, TO-247AC IGBT International Rectifier’s IRG series of Insulated Gate
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O-247AC
IRGPC46
10a 100v bipolar transistor
mosfet induction heater
S101
SS452
VQE 21 d
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irg4
Abstract: IRG4RC10U
Text: International IGR Rectifier PD - 9 .1 5 7 2 IRG4 RC10U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter
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RC10U
O-252AA
EIA-481
irg4
IRG4RC10U
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irgph50ud
Abstract: IRGPH50u C732 TRANSISTOR transistor C732
Text: International îor Rectifier PD - 9.802A IRGPC50UD2 UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features V ces = 600 V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes
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IRGPC50UD2
DD2D521
O-247AC
C-732
GG20522
irgph50ud
IRGPH50u
C732 TRANSISTOR
transistor C732
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transistor c374
Abstract: transistor c373 transistor c377
Text: International [^Rectifier P D -9.1143 IRGBC30MD2-S Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • V ces = 600V Short circuit rated -1 Ops @ 125°C, V qe = 15V Switching-loss rating includes all "tail" losses
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IRGBC30MD2-S
10kHz)
high-volta379
SMD-220
C-380
transistor c374
transistor c373
transistor c377
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Irgbc20fd2
Abstract: No abstract text available
Text: International PD - 9.788 ^Rectifier IRGBC20FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECO VERY DIODE Fast CoPack IGBT Features • Switching-loss rating includes all “tail" losses • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to
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IRGBC20FD2
10kHz)
T0-22QAB
C-100
Irgbc20fd2
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Untitled
Abstract: No abstract text available
Text: International giilRectifier PD - 9.686A IRGBC20F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features • Switching-loss rating includes all "tail" losses V c es = 6 0 0 V • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve
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IRGBC20F
10kHz)
O-220AB
S5452
O-22QAB
5545E
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G4PC40
Abstract: g4pc40f G4PC4 G4PC
Text: International IG R Rectifier PD - 9.1463A IRG4PC40F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter
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IRG4PC40F
O-247AC
G4pc40f,
G4PC40
g4pc40f
G4PC4
G4PC
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RTO BH
Abstract: No abstract text available
Text: PD - 9 .1 6 2 0 International I R Rectifier PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR IRG4BC20K-S Short Circuit Rated _ UltraFast IGBT Features • High short circuit rating optimized for motor control, tsc =10ps, @ 3 60 V VCE start , T j = 125°C,
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IRG4BC20K-S
RTO BH
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Marking ANs
Abstract: Transistor C 5198 b 514 transistor BFP450
Text: SIEMENS SIEGET 25 BFP 450 NPN Silicon RF Transistor • For medium power amplifiers • Compression point P. 1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency fT = 24 GHz • Gold metalization for high reliability
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Q62702-F1590
OT-343
Marking ANs
Transistor C 5198
b 514 transistor
BFP450
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Untitled
Abstract: No abstract text available
Text: International ^Rectifier PD - 9.684A IRGPC40U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail” losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve
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IRGPC40U
100ase
D2D47S
O-247AC
Q02DM7b
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Untitled
Abstract: No abstract text available
Text: PD - 9.1454A International IGR Rectifier IRG4 BC4 0 F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter
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O-22QAB
002fl0Rb
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Untitled
Abstract: No abstract text available
Text: PD -5.05 5 In te rn a tio n a l K SR Rectifier PRELIMINARY "HALF-BRIDGE" IGBT INT-A-PAK GA100TS60U Ultra-Fast Speed IGBT Features • Generation 4 IG B T technology V c E S = 600 V • UltraFast: Optim ized for high operating frequencies 8 -4 0 kH z in hard switching, >200
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GA100TS60U
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transistor iqr
Abstract: g-50Q IRG4BC20U
Text: International IQR Rectifier pd-9.i 448c IRG4BC20U PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter
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IRG4BC20U
TQ-220AB
transistor iqr
g-50Q
IRG4BC20U
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order thle document by MHPM7B12A120A/D SEMICONDUCTOR TECHNICAL DATA MHPM7B12A120A Hybrid Power Module Motorola Pwfttrod Dovtco Integrated Power Stage for 2.0 hp Motor Drives This module Integrates a 3-phase Input rectifier bridge, 3-phase output Inverter and brake transistor/diode In a single convenient package. The output
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MHPM7B12A120A/D
MHPM7B12A120A
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