Untitled
Abstract: No abstract text available
Text: TM Micro Commercial Components PIN DIODES MCC Part Number Continuous Reverse Voltage VR V Maximum Reverse Current @ 25°C IR @ VR A Maximum Forward Voltage Drop Current VF @ IF V Junction Capacitance VR =1.0V f=1MHz Diode Forward Resistance IF =10mA f=100MHz
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100MHz
OD-323
OD-523
OT-323
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Untitled
Abstract: No abstract text available
Text: BA479G.BA479S Vishay Telefunken RF PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 9367 Order Instruction Type Type Differentiation BA479G VR = 30 V V, Zr>5kΩ BA479S VR = 30 V
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BA479G
BA479S
BA479G
BA479Gâ
BA479Sâ
D-74025
13-Feb-01
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BA479
Abstract: BA479G BA479S
Text: BA479G.BA479S Vishay Telefunken RF PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 9367 Order Instruction Type Type Differentiation BA479G VR = 30 V V, Zr>5kΩ BA479S VR = 30 V
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BA479G
BA479S
BA479G
BA479S
D-74025
13-Feb-01
BA479
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Untitled
Abstract: No abstract text available
Text: BA779.BA779S Vishay Telefunken RF PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Order Instruction Type Type Differentiation VR = 30 V, Zr = 5kΩ VR = 30 V, Zr = 9kΩ
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BA779
BA779S
BA779
BA779â
BA779Sâ
13-Feb-01
D-74025
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BA979
Abstract: BA979S
Text: BA979.BA979S Vishay Telefunken RF PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications 96 12009 Current controlled HF resistance in adjustable attenuators Order Instruction Type Type Differentiation VR = 30 V, Zr = 5kΩ VR = 30 V, Zr = 9kΩ
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BA979
BA979S
BA979
BA979S
13-Feb-01
D-74025
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BA779
Abstract: BA779S
Text: BA779.BA779S Vishay Semiconductors RF PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Order Instruction Type Type Differentiation VR = 30 V, Zr = 5kΩ VR = 30 V, Zr = 9kΩ
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BA779
BA779S
BA779
BA779S
13-Feb-01
D-74025
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BA979
Abstract: BA979S
Text: BA979.BA979S Vishay Semiconductors RF PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications 96 12009 Current controlled HF resistance in adjustable attenuators Order Instruction Type Type Differentiation VR = 30 V, Zr = 5kΩ VR = 30 V, Zr = 9kΩ
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BA979
BA979S
BA979
BA979S
13-Feb-01
D-74025
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BA779
Abstract: BA779S
Text: BA779.BA779S Vishay Telefunken RF PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Order Instruction Type Type Differentiation VR = 30 V, Zr = 5kΩ VR = 30 V, Zr = 9kΩ
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BA779
BA779S
BA779
BA779S
13-Feb-01
D-74025
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Untitled
Abstract: No abstract text available
Text: BA679.BA679S Vishay Telefunken RF PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 9371 Order Instruction Type BA679 BA679S Type Differentiation VR = 30 V, Zr>5kΩ VR = 30 V, Zr>9kΩ
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BA679
BA679S
BA679
BA679â
BA679Sâ
mmx50
D-74025
13-Feb-01
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BA679
Abstract: BA679S
Text: BA679.BA679S Vishay Telefunken RF PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 9371 Order Instruction Type BA679 BA679S Type Differentiation VR = 30 V, Zr>5kΩ VR = 30 V, Zr>9kΩ
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BA679
BA679S
BA679
BA679S
mmx50
D-74025
13-Feb-01
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BA679
Abstract: BA679S
Text: BA679.BA679S Vishay Semiconductors RF PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 9371 Order Instruction Type BA679 BA679S Type Differentiation VR = 30 V, Zr>5kΩ VR = 30 V, Zr>9kΩ
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BA679
BA679S
BA679
BA679S
mmx50
D-74025
13-Feb-01
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Untitled
Abstract: No abstract text available
Text: BAS116WS SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODE VOLTAGE 200mWatts POWER 100 Volts FEATURES • • • • Suface mount package ideally suited for automatic insertion. Very low leakage current. 2nA typical at VR=75V. Low capacitance. 2pF max at VR=0V, f=1MHz
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BAS116WS
200mWatts
2011/65/EU
IEC61249
OD-323
MIL-STD-750,
2013-REV
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BAS116WS
Abstract: No abstract text available
Text: DATA SHEET BAS116WS SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODE VOLTAGE 100 Volts POWER 200mWatts SOD-323 Unit: inch mm FEATURES Suface mount package ideally suited for automatic insertion. Very low leakage current. 2nA typical at VR=75V. Low capacitance. 2pF max at VR=0V, f=1MHz
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BAS116WS
200mWatts
OD-323
2002/95/EC
OD-323
MIL-STD-750,
BAS116WS
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BA479G
Abstract: ba479 BA479S
Text: BA479G.BA479S Vishay Semiconductors RF PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 9367 Order Instruction Type Type Differentiation BA479G VR = 30 V V, Zr>5kΩ BA479S
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BA479G
BA479S
BA479G
BA479S
D-74025
13-Feb-01
ba479
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BA779
Abstract: No abstract text available
Text: BA779–2 Vishay Telefunken Dual RF PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Order Instruction Type Type Differentiation VR = 30 V, Zr = 5kΩ BA779–2 Ordering Code
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BA779
13-Feb-01
mmx50
D-74025
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US1B
Abstract: No abstract text available
Text: Product Catalog > Diodes > Ultra Fast Recovery Rectifiers > Part Number US1M product family ULTRA FAST RECOVERY RECTIFIERS package type DO-214AC VRM PRV 1000V Ifsm 30A IF(AV) 1.0A @Vf 1.7V @If 1.0A Trr 100nS IR 10µA @VR 1000V Package Qty Tape : 5K/Reel, 80K/Ctn;
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DO-214AC
100nS
80K/Ctn;
US1B
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Untitled
Abstract: No abstract text available
Text: ^ ^ discrete devices jEmitronicr hot line TOLL FREE NUMBER 800-777-3960 ELECTRICAL CHARACTERISTICS a 25 C REVERSE BREAKDOW N V O LT A G E STANDOFF VOLTAGE PART NUMBER (N0TE1 VR M AXIM U M R EVE R SE LE AK AG E (a VR M AXIM U M C LA M P IN G V O LT A G E
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Untitled
Abstract: No abstract text available
Text: V|No- •AAAr PIN 1 H • w •5k VR VIN 5k UoL r + CL L Cd B —pCL rt CT GND eb LM3524D r CA ea on oU COMP 0.001 GNDO jjl F OGND
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SRT-2W6H
Abstract: SRK-12ZB U17E v08g c 113C 134B U17C U17D V07E SRT-2W6
Text: - 94 - f t * 5Ë fe i S 6J 1i I Í PI H ä it'JÆ m % t t € Prsm Vrsm Vr r m Io Vr Ifsm T £ # Vpmax I Rtnax Vz V * & < * m (kW) (V) (V) (V) (A) (°C> 200 0. 1 5 40a (A) S R —3 S R —3 B n S R —4 S R —4 200 SR-4 H * ' ) SRK-12ZB(T06) SRK-12ZBÍT07)
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SRK-12ZBCT05)
SRK-12ZBÃ
SRK400
SRT-2W6H
SRK-12ZB
U17E
v08g c
113C
134B
U17C
U17D
V07E
SRT-2W6
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SRT-2W6H
Abstract: 134B v08g c 113C SRK-12ZB U17C U17D U17E V07E s 134b
Text: - 94- f t * 5Ë fe i S 6J 1i I Í PI H ä it'JÆ m % t t € Prsm Vrsm Vr r m Io Vr Ifsm T £ # Vpmax I Rtnax Vz V * & < * m (kW) (V) (V) (V) (A) (°C> 200 0. 1 5 40a (A) S R —3 S R —3 B n S R —4 S R —4 200 SR-4 H * ' ) SRK-12ZB(T06) SRK-12ZBÍT07)
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SRK-12ZBCT05)
SRK-12ZBÃ
33MIN
33MIN
17MIN
17MIN
20MIN
15MIN
20MIN
SRT-2W6H
134B
v08g c
113C
SRK-12ZB
U17C
U17D
U17E
V07E
s 134b
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SRT-2W6H
Abstract: SRK-12ZB A114C SRT 2w6H V08G 113C 134B U17C U17D U17E
Text: - 94 - ft * 5Ë fe i S 6J 1i I Í PI H ä it'JÆ m % t t € Prsm Vrsm Vr r m Io Vr I fsm T £ # Vpmax I Rt na x Vz V * &<* m (k W ) (V ) (V ) (V ) (A ) (°C> 20 0 0. 15 40a (A ) S R —3 S R —3 B n S R —4 S R —4 20 0 SR-4 H * ') SRK-12ZB(T06) SRK-12ZBÍT07)
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SRK-12ZBCT05)
SRK-12ZBÃ
26MIN
26M1N
28MIN
26MIN
29MIN
29MIN
SRT-2W6H
SRK-12ZB
A114C
SRT 2w6H
V08G
113C
134B
U17C
U17D
U17E
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SRT-2W6H
Abstract: SRK-12ZB U17E v08g c 113C 134B U17C U17D V07E SRT-2W6
Text: - 94 - ft * 5Ë fe i S 6J 1i I Í PI H ä it'JÆ m % t t € Prsm Vrsm Vr r m Io Vr I fsm T £ # Vpmax I Rt na x Vz V * &<* m (k W ) (V ) (V ) (V ) (A ) (°C> 20 0 0. 15 40a (A ) S R —3 S R —3 B n S R —4 S R —4 20 0 SR-4 H * ') SRK-12ZB(T06) SRK-12ZBÍT07)
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SRK-12ZBCT05)
SRK-12ZBÃ
SRT-2W6H
SRK-12ZB
U17E
v08g c
113C
134B
U17C
U17D
V07E
SRT-2W6
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Untitled
Abstract: No abstract text available
Text: RECTIFIER, January 7, 1998 up to 6kV, 260mA, 5|JS TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com AXIAL LEADED HERMETICALLY SEALED HIGH VOLTAGE STANDARD RECOVERY RECTIFIER DIODE • • • • • M50A M60A QUICK REFERENCE DATA Vr = 5kV - 6kV
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260mA,
TEL805-498-2111
260mA
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TA7063P
Abstract: AN7320 BA3302 ta7227p an7112 TA7227 GW 5820 14.4v AN6210 mb3105
Text: o » f l î * j * * Œ M H . 6 .2 - 1 7 V o m f f i e i t 'f b K Ä r t Ä AN6210 • fa V «nia»« ■ * * * » r«= 25t Vcc 17V Vra^s 0 -4 .5 V Vr«-s 0 -4 .5 V Vr«_a 0 -4 .6 V VrT-5 V ra-5 0 -4 .5 V V r ,- 5 0 -4 .5 V Jcc 3<hnA Pr
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AN6210
100pFJU
TA7063P
AN7320
BA3302
ta7227p
an7112
TA7227
GW 5820
14.4v
AN6210
mb3105
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