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Excelitas Technologies Corporation VTE1262H IRED 880 NM - T1-3/4
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Ozdisan Elektronik	VTE1262H					1 $1.23684 10 $1.23684 100 $1.1244 1000 $1.1244 10000 $1.1244	Get Quote

VTE1262 Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
VTE1262		PerkinElmer Optoelectronics	GaAlAs Infrared Emitting Diode		Original	PDF
VTE1262		EG&G	HIGH POWER GaAIAs INFRARED EMITTING DIODES 880 nm		Scan	PDF
VTE1262		EG&G Vactec	GaAlAs Infrared Emitting Diodes		Scan	PDF
VTE1262W		EG&G	HIGH POWER GaAIAs INFRARED EMITTING DIODES 880 nm		Scan	PDF
VTE1262W		EG&G Vactec	GaAlAs Infrared Emitting Diodes		Scan	PDF

VTE1262 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
C1383 NPN transistor collector base and emitter Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383 Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,	Original	10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383	PDF
Untitled Abstract: No abstract text available Text: GaAlAs Infrared Emitting Diodes VTE1261H, 1262H T-1¾ 5 mm Plastic Package — 880 nm PACKAGE DIMENSIONS inch (mm) CASE 26 T-1¾ (5 mm) CHIP SIZE: .018" x .018" DESCRIPTION This narrow beam angle 5 mm diameter plastic packaged emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high	Original	VTE1261H, 1262H VTE1261H VTE1262H	PDF
VTE1063 Abstract: VTE1163 VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1281F VTE1281W-1 VTE1281W-2 VTE1285 Text: infrared emitting diodes Features 880 nm • Nine standard packages in hermetic and low-cost epoxy • End- and side-radiating packages • Graded Output • High efficiency GaAIAs, 880 nm LPE process Delivers twice the power of conventional GaAs 940 nm emitters	Original	VTE7172 VTE7173 VTE1013 VTE1113 VTE3322LA VTE3324LA VTE3372LA VTE3374LA VTE1063 VTE1163 VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1281F VTE1281W-1 VTE1281W-2 VTE1285	PDF
VTE1261 Abstract: VTE1262 VTE1281-1 VTE1281-2 Text: GaAlAs Infrared Emitting Diodes VTE1261, 1262 T-1¾ 5 mm Plastic Package — 880 nm PACKAGE DIMENSIONS inch (mm) CASE 26 T-1¾ (5 mm) CHIP SIZE: .018" x .018" DESCRIPTION This narrow beam angle 5 mm diameter plastic packaged emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high	Original	VTE1261, VTE1281-1 VTE1281-2 VTE1261 VTE1262 VTE1281-1 VTE1281-2	PDF
VTE1261H Abstract: No abstract text available Text: GaAlAs Infrared Emitting Diodes VTE1261H, 1262H T-1¾ 5 mm Plastic Package — 880 nm PACKAGE DIMENSIONS inch (mm) CASE 26 T-1¾ (5 mm) CHIP SIZE: .018" x .018" DESCRIPTION This narrow beam angle 5 mm diameter plastic packaged emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high	Original	VTE1261H, 1262H VTE1261H VTE1262H VTE1261H	PDF
VTE1291-2 Abstract: VTE1063 VTE1163 VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1281F VTE1281W-1 VTE1281W-2 Text: GaAlAs Infrared Emitting Diodes VTE1063 TO-46 Flat Window Package — 880 nm PACKAGE DIMENSIONS inch mm CASE 24 TO-46 HERMETIC (Flat Window) CHIP SIZE: .018" x .018" DESCRIPTION This wide beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip suitable for higher	Original	VTE1063 VTE7172 VTE7173 VTE1291-2 VTE1063 VTE1163 VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1281F VTE1281W-1 VTE1281W-2	PDF
Untitled Abstract: No abstract text available Text: V SbE 3a3übOS 000122G GaAIAs Infrared Emitting Diodes VTE1261W, 1262W T-1 3/4 Plastic Package - 880 nm E G & G 7 22 H I V C T T -m VACTE C -i3 PACKAGE DIMENSIONS inch mm 1.00 ( 2 5 .4 ) .2 2 0 ( 5 .5 9 ) •OSO ( 1 .2 7 ) .2 6 (6 .6 ) .0 9 (2 .3 ) .0 3 0 ( 0 .7 6 ) "	OCR Scan	000122G VTE1261W, VTE1261W VTE1262W	PDF
H0A0872-n55 Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12 Text: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1	OCR Scan	1N5722 1N5723 1N5724 1N5725 1N6264 1N6265 1N6266 2004-90xx 2600-70XX 2N5777-80 H0A0872-n55 H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12	PDF
VTE1261 Abstract: VTE1262 Text: a o a o b o i □ D D 1 21 Û 074 • VCT 5bE D GaAIAs Infrared Emitting Diodes V T E 1 2 6 1 , 1262 T-1 3/4 Plastic Package — 880 nm -HI-13 G VACTEC P A C K A G E D IM E N S IO N S inch mm ( 2 5 .4 ) 1 .0 0 .2 4 0 ( 6 . 10 ) Plastic contour not controted in region	OCR Scan	VTE1261, r-13/4 VTE1261 VTE1262	PDF
Untitled Abstract: No abstract text available Text: aüaübDI D0D121A 07*4 • VCT SbE D GaAIAs Infrared Emitting Diodes VTE1261, 1262 T-1 3/4 Plastic Package — 880 nm '-MI-13 E G 8« G VACTEC PACKAGE DIMENSIONS inch mm i n n Ì95.4Ì iaa in i< ^ Plasöc contour noi controled in region of the leads. DESCRIPTION	OCR Scan	D0D121A VTE1261, -MI-13 VTE1261 VTE1262	PDF
VTE1261W Abstract: VTE1262W Text: 5bE D 3030b[n Q001220 GaAIAs Infrared Emitting Diodes 752 • VCT VTE1261W , 1262W T-1 3/4 Plastic Package — 880 nm T - M I -I3 E G & G VACTEC PACKAGE DIMENSIONS inch mm ■OSO ( 1 . 2 7 ) 1 .0 0 ( 2 5 . 4 ) .2 4 0 ( 6 .J 0 ) M INIM UM .2 2 0 ( 5 .5 9 )	OCR Scan	3030b Q001220 VTE1261W, CASE26W VTE1261W VTE1262W VTE1262W	PDF