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    VTE3322LA Search Results

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    VTE3322LA Price and Stock

    Excelitas Technologies Corporation VTE3322LAH

    DIODE INFRARED EMITTING 940NM 1.5mW ±10°
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik VTE3322LAH
    • 1 $1.47873
    • 10 $1.47873
    • 100 $1.3443
    • 1000 $1.3443
    • 10000 $1.3443
    		Get Quote

    VTE3322LA Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    VTE3322LA PerkinElmer Optoelectronics GaAs Infrared Emitting Diode Original PDF
    VTE3322LA EG&G Vactec GaAs Infrared Emitting Diodes Scan PDF
    VTE3322LAH PerkinElmer Optoelectronics GaAs Infrared Emitting Diodes Original PDF

    VTE3322LA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PerkinElmer Optoelectronics

    Abstract: VTE3322LAH VTE3324LAH
    Text: GaAs Infrared Emitting Diodes VTE3322LAH, 24LAH Long T-1 Plastic Package — 940 nm PACKAGE DIMENSIONS inch mm CASE 50A LONG T-1 CHIP SIZE: .011" X .011" DESCRIPTION This narrow beam angle, 3 mm diameter plastic packages, GaAs, 940 nm emitter is suitable for use in optical switch applications.


    Original     		PDF VTE3322LAH, 24LAH VTE3322LAH VTE3324LAH PerkinElmer Optoelectronics VTE3322LAH VTE3324LAH

    Untitled

    Abstract: No abstract text available
    Text: GaAs Infrared Emitting Diodes VTE3322LAH, 24LAH Long T-1 Plastic Package — 940 nm PACKAGE DIMENSIONS inch mm CASE 50A LONG T-1 CHIP SIZE: .011" X .011" DESCRIPTION This narrow beam angle, 3 mm diameter plastic packages, GaAs, 940 nm emitter is suitable for use in optical switch applications.


    Original     		PDF VTE3322LAH, 24LAH VTE3322LAH VTE3324LAH

    VTE3324LA

    Abstract: VTE3322LA
    Text: GaAs Infrared Emitting Diodes VTE3322LA, 24LA Long T-1 Plastic Package — 940 nm PACKAGE DIMENSIONS inch mm CASE 50A LONG T-1 CHIP SIZE: .011" X .011" DESCRIPTION This narrow beam angle, 3 mm diameter plastic packages, GaAs, 940 nm emitter is suitable for use in optical switch applications.


    Original     		PDF VTE3322LA, VTE3322LA VTE3324LA VTE3324LA VTE3322LA

    C1383 NPN transistor collector base and emitter

    Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
    Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,


    Original     		PDF 10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383

    VTE1013

    Abstract: VTE1113 VTE3322LA VTE3324LA opto127
    Text: GaAs Infrared Emitting Diodes VTE1013 TO-46 Flat Window Package — 940 nm PACKAGE DIMENSIONS inch mm CASE 24A TO-46 HERMETIC (Flat Window) CHIP SIZE: .018" X .018" DESCRIPTION This wide beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAs, 940 nm IRED chip suitable for higher


    Original     		PDF VTE1013 VTE3322LA VTE3324LA VTE1013 VTE1113 VTE3322LA VTE3324LA opto127

    VTE1063

    Abstract: VTE1163 VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1281F VTE1281W-1 VTE1281W-2 VTE1285
    Text: infrared emitting diodes Features 880 nm • Nine standard packages in hermetic and low-cost epoxy • End- and side-radiating packages • Graded Output • High efficiency GaAIAs, 880 nm LPE process Delivers twice the power of conventional GaAs 940 nm emitters


    Original     		PDF VTE7172 VTE7173 VTE1013 VTE1113 VTE3322LA VTE3324LA VTE3372LA VTE3374LA VTE1063 VTE1163 VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1281F VTE1281W-1 VTE1281W-2 VTE1285

    Untitled

    Abstract: No abstract text available
    Text: SbE D 3D3QbOR GQ012GÔ GaAs Infrared Emitting Diodes « V C T VTE3322LA, 24LA Long T-1 Plastic Package — 940 nm E 155 & G VACTEC G PACKAGE DIMENSIONS inch mm .0 2 3 (0 58) SQ.0 1 7 (0 .4 3 ) .2 2 (S .6) .0 6 (1 .5 ) I .1 6 0 ( 4 .0 6 ) .1 4 0 (3 .5 6 )


    OCR Scan     		PDF GQ012GÃ VTE3322LA, VTE3322LA VTE3324LA

    VTE3322LA

    Abstract: VTE3324LA Vactec 21
    Text: SbE D 303DL0^ 000120fi 12S G aAs Infrared Emitting Diodes IVCT V TE3322LA, 24LA Long T-1 Plastic Package — 940 nm E G & G VACTEC PACKAGE DIMENSIONS inch mm .2 2 ( S .6 ) 1 6 0 (4 .0 6 ) • 205 ( 5 . 2 1 ) .1 9 5 ( 4 .9 5 ) | Plastic contour not controfed in region


    OCR Scan     		PDF 303DL0^ 00012Dfl VTE3322LA, VTE3322LA VTE3324LA VTE3322LA VTE3324LA Vactec 21