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    VTP1232 Price and Stock

    Excelitas Technologies Corporation VTP1232H

    SENSOR PHOTODIODE 920NM RADIAL
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    DigiKey VTP1232H Bulk 250
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    ComSIT USA VTP1232H 11,000
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    Excelitas Technologies Corporation VTP1232-2AH

    Photo Diode; Peak Reflow Compatible (260 C):Yes Rohs Compliant: Yes |Excelitas Tech VTP1232-2AH
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    Newark VTP1232-2AH Bulk 1 1
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    Excelitas Technologies Corporation VTP1232FH

    Photo Diode; No. Of Pins:2Pins; Diode Case Style:T-1 3/4 (5Mm); Wavelength Of Peak Sensitivity:920Nm; Angle Of Half Sensitivity ±:70°; Dark Current:0.025Μa; Operating Temperature Min:-40°C; Operating Temperature Max:100°C; Msl:- Rohs Compliant: Yes |Excelitas Tech VTP1232FH
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    Newark VTP1232FH Bulk 500
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    Excelitas Technologies Corporation VTP1232-2A

    Photodiode Rohs Compliant: No |Excelitas Tech VTP1232-2A
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    Newark VTP1232-2A Bulk 400
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    VTP1232 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    VTP1232 PerkinElmer Optoelectronics VTP Process Photodiode Original PDF
    VTP1232 EG&G Vactec VTP Process Photodiodes Scan PDF
    VTP1232H Excelitas Technologies Sensors, Transducers - Optical Sensors - Photodiodes - PHOTODIODE FASTRESP T1 3/4 Original PDF

    VTP1232 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: VTP Process Photodiodes VTP1232 PACKAGE DIMENSIONS inch mm (Also available in infrared transmitting visible blocking version) PRODUCT DESCRIPTION CASE 26 T-1¾ CHIP ACTIVE AREA: .0036 in2 (2.326 mm2) ABSOLUTE MAXIMUM RATINGS This photodiode features the largest detection


    Original
    PDF VTP1232

    nf 0036 diode

    Abstract: VTP1232H sr100 SR 100 NF1100
    Text: VTP Process Photodiodes VTP1232H PACKAGE DIMENSIONS inch mm (Also available in infrared transmitting visible blocking version) PRODUCT DESCRIPTION CASE 26 T-1¾ CHIP ACTIVE AREA: .0036 in2 (2.326 mm2) ABSOLUTE MAXIMUM RATINGS This photodiode features the largest detection


    Original
    PDF VTP1232H nf 0036 diode VTP1232H sr100 SR 100 NF1100

    VTP1232F

    Abstract: No abstract text available
    Text: SILICON PHOTODIODE VTP1232F PRELIMINARY ENGINEERING DATA SHEET FEATURES PRODUCT DESCRIPTION • Low dark current • Fast response This VTP processed P on N planar silicon photodiode is housed in a clear, T-1 3/4 endlooking package. • Blue to IR spectral range


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    PDF VTP1232F VTP1232F

    Untitled

    Abstract: No abstract text available
    Text: SILICON PHOTODIODE VTP1232F PRELIMINARY ENGINEERING DATA SHEET FEATURES PRODUCT DESCRIPTION • Low dark current • Fast response This VTP processed P on N planar silicon photodiode is housed in a clear, T-1 3/4 endlooking package. • Blue to IR spectral range


    Original
    PDF VTP1232F

    Untitled

    Abstract: No abstract text available
    Text: VTP Process Photodiodes VTP1232H PACKAGE DIMENSIONS inch mm (Also available in infrared transmitting visible blocking version) PRODUCT DESCRIPTION CASE 26 T-1¾ CHIP ACTIVE AREA: .0036 in2 (2.326 mm2) ABSOLUTE MAXIMUM RATINGS This photodiode features the largest detection


    Original
    PDF VTP1232H

    VTP1232

    Abstract: OPTO-52
    Text: VTP Process Photodiodes VTP1232 PACKAGE DIMENSIONS inch mm (Also available in infrared transmitting visible blocking version) PRODUCT DESCRIPTION CASE 26 T-1¾ CHIP ACTIVE AREA: .0036 in2 (2.326 mm2) ABSOLUTE MAXIMUM RATINGS This photodiode features the largest detection


    Original
    PDF VTP1232 VTP1232 OPTO-52

    C1383 NPN transistor collector base and emitter

    Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
    Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,


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    PDF 10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383

    VTP8651

    Abstract: VTP1112 VTP4085 VTP1188S VTP11188S VTP1232 silicon photodiode array VTP1012 VTP7840 VTP100
    Text: VTP Process Photodiodes VTP100 PACKAGE DIMENSIONS inch mm CASE 52 FLAT SIDELOOKER CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic sidelooker package. The package material is infrared transmitting (blocking visible light).


    Original
    PDF VTP100 VTP8651 VTP1112 VTP4085 VTP1188S VTP11188S VTP1232 silicon photodiode array VTP1012 VTP7840 VTP100

    Photodiode vactec

    Abstract: EG*G Vactec VTP1232
    Text: VTP1232 VTP Process Photodiodes P A C K A G E DIMENSIONS inch mm 2 4 0 ( 6 .1 0 ) M IN IM U M .05-0 ( t . 2 7 ) , .030 (0 .7 6 ) .2 2 0 (5 .5 9 ) . 3 4 (8 . 6 ) .1 7 (4 . 3 ) ^<t£)nom- .026 (0 .6 6 ) [.0 1 7 .2 0 0 ( 5 . 0 8 ) .1 8 0 ( 4 . 5 7 ) c JL (0 .4 3 )


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    PDF VTP1232 Photodiode vactec EG*G Vactec VTP1232

    Untitled

    Abstract: No abstract text available
    Text: VTP1232 VTP Process Photodiodes PACKAGE DIMENSIONS inch mm MINIMUM , .34 (8.6) .17 (4.3) .050 (1 .27 ) .030 (0.76 ) 240 (6 .10 ) .220 (5 .59 ) k — ~ ^ -N O M . (1 .52 ) .026 (0 .66 ) [ . 0 1 7 (0 .4 3 ) JL .200 (5 .08 ) .180 (4 .57 ) Also available in infrared transmitting/


    OCR Scan
    PDF VTP1232 3D30bDc