transistor 431A
Abstract: 431a WPT-431A transistor 431A DATASHEET "photo transistor" npn photo transistor counters ic 431-A
Text: Waitrony Photo Transistor 2-03-02-12 Module No.: WPT-431A 1. General Description: Dimensions The WPT-431A is a high sensitivity NPN silicon phototransistor mounted in a clear epoxy side looking package. It is compact, low profile and easy to mount. 2. Features
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WPT-431A
WPT-431A
1000Lux,
2000Lux
10mW/cm2
2856K
transistor 431A
431a
transistor 431A DATASHEET
"photo transistor"
npn photo transistor
counters ic
431-A
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WS2012GHC
Abstract: Waitrony green
Text: Waitrony LED - Light Emitting Diode_ Surface Mount Device Module No.: WS2012GHC Features: GREEN Water Clear High Bright Dimensions Absolute Maximum Ratings Descriptions Continuous Forward Current Peak Forward Current *1 Reverse Voltage Operating Temperature
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WS2012GHC
WS2012GHC
Waitrony green
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position sensitive diode circuit
Abstract: PD-S30M
Text: Waitrony Infrared Pin Photo Diode Model No.: PD-S30M 1. General Description: Dimensions The PD-S30M is a high sensitive and high speed PN junction silicon photo diode with PIN structure, which is mounted in a black epoxy and surface mount package. 1. Cathode
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PD-S30M
PD-S30M
position sensitive diode circuit
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RS-12F
Abstract: No abstract text available
Text: Waitrony Photo Reflective Sensor Module No.: RS-12F Dimensions Unit: mm 1. General Description The RS-12F reflective sensor combines a GaAs IRED with a highsensitivity phototransistor in a super mini type package, reducing installation space. TOP VIEW —
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RS-12F
RS-12F
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IE-0545HP
Abstract: Waitrony
Text: Waitrony Infrared Emitting Diode_ Rev. 1-00-07-12 Module No.: IE-0545HP 1. General Description: Dimensions IE-0545HP is a high output power GaAlAs infrared light emitting diode, mounted in a clear epoxy end looking package. It emits narrow band
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IE-0545HP
940nm.
IE-0545HP
Waitrony
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WPTS-512
Abstract: npn photo transistor phototransistor 600 nm time phototransistor 580 1050nm
Text: Photo Transistor Waitrony Module No.: WPTS-512 1. General Description: The WPTS-512 is a high sensitivity NPN silicon phototransistor mounted in a 05mm flat head and water clear resin package. This phototransistor permits wide angular response. Dimensions
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WPTS-512
WPTS-512
npn photo transistor
phototransistor 600 nm
time
phototransistor 580
1050nm
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IE-0505HP
Abstract: No abstract text available
Text: Waitrony Infrared Emitting Diode_ Rev. 1-00-05-25 Module No.: IE-0505HP 1. General Description: Dimensions IE-0505HP is a high output power GaAlAs infrared light emitting diode, mounted in a clear epoxy end looking package. It emits narrow band
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IE-0505HP
IE-0505HP
940nm.
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PD-34BRD
Abstract: No abstract text available
Text: Waitrony Infrared Pin Photo Diode Model No.: PD-34BRD 1. General Description: Dimensions The PD-34BRD consists of a PN junction silicon photo diode with PIN structure mounted in a lens, black plastic epoxy, and end looking package. The lens effect allows an acceptance angle of ±15°
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PD-34BRD
PD-34BRD
400LUX
200LUX
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RS-05FS
Abstract: RS05FS RS 05fs Refle
Text: Waitrony Photo Reflective Sensor Module No.: RS-05FS 1. General Description Dimensions Unit: mm RS-05FS reflective sensor combines a GaAs infrared light emitting diode with a high sensitive phototransistor in a super mini chip-type package, reducing installation space.
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RS-05FS
RS-05FS
RS05FS
RS 05fs
Refle
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IE-372P
Abstract: WPT-342P Waitrony
Text: Waitrony Infrared Emitting Diode_ Module No.: IE-372P 1. General Description: Dimensions IE-372P is a high output power GaAlAs infrared light emitting diode, mounted in a side looking epoxy package. It emits narrow band of radiation peaking at 940nm.
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IE-372P
940nm.
WPT-342P
Ta-25Â
WPT-342P
Waitrony
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ultrasonic transducer 40khz
Abstract: 40khz ultrasonic receiver and transmitter ultrasonic transmitter and receiver piezoelectric transducer 40khz 40KHz Ultrasonic receiver 40khz ultrasonic transmitter 40KHZ ULTRASONIC transducers ultrasonic transducer circuit 40 khz ultrasonic transducer piezoelectric transducer for sound
Text: Waitrony Ultrasonic Transducer CSTR40-12P 1. General Description The CST40-12P and CSR40-12P are matched pair ultrasonic transmitter and receiver respectively operated at 40kHz center frequency with 012.6mm diameter in plastic case. This transducer utilizes the piezoelectric properties of engineering ceramic that provides
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CSTR40-12P
CST40-12P
CSR40-12P
40kHz
Ta-25Â
100dB,
40kHz
ultrasonic transducer 40khz
40khz ultrasonic receiver and transmitter
ultrasonic transmitter and receiver
piezoelectric transducer 40khz
40KHz Ultrasonic receiver
40khz ultrasonic transmitter
40KHZ ULTRASONIC transducers
ultrasonic transducer circuit
40 khz ultrasonic transducer
piezoelectric transducer for sound
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IE-0530HU
Abstract: No abstract text available
Text: Waitrony Infrared Emitting Diode_ Module No.: IE-0530HU 1. General Description: Dimensions IE-0530HU is a high output power and high speed GaAlAs infrared light emitting diode, mounted in a clear epoxy end looking package. It emits medium band of radiation
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IE-0530HU
IE-0530HU
850nm.
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WPDT-230
Abstract: waitrony
Text: Waitrony Photo Transistor Module No.: WPDT-230 1. General Description: Dimensions The WPDT-230 is a high output NPN photo darlington transistor mounted in a clear side looking epoxy package. This is compact, low profile and easy to mount. 2. Features > > >
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WPDT-230
WPDT-230
200i--
waitrony
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WS2012RHC
Abstract: No abstract text available
Text: Waitrony LED - Light Emitting Diode_ Surface Mount Device Module No.: WS2012RHC Dimensions Features: RED Water Clear High Bright Absolute Maximum Ratings Descriptions Continuous Forward Current Peak Forward Current *1 Reverse Voltage Operating Temperature
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WS2012RHC
WS2012RHC
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c 5802 transistor
Abstract: IAO5 Waitrony IE-2 WPTS-510D Rise time of photo transistor
Text: Photo Transistor Waitrony Module No.: WPTS-510D 1. General Description: The WPTS-510D is a high sensitivity NPN silicon phototransistor mounted in a 05mm black epoxy resin package. With daylight filter, this phototransistor is only sensitive to infrared rays. This phototransistor
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WPTS-510D
WPTS-510D
c 5802 transistor
IAO5
Waitrony IE-2
Rise time of photo transistor
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IE-0515HP
Abstract: No abstract text available
Text: Waitrony Infrared Emitting Diode_ Module No.: IE-0515HP 1. General Description: Dimensions IE-0515HP is a super high output power GaAlAs infrared light emitting diode, mounted in a clear epoxy end looking package. It emits narrow band of radiation peaking at 940nm.
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IE-0515HP
IE-0515HP
940nm.
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IE-0515HL
Abstract: No abstract text available
Text: Waitrony Infrared Emitting Diode_ Module No.: IE-0515HL 1. General Description: Dimensions IE-0515HL is a super high output power GaAlAs infrared light emitting diode, mounted in a clear epoxy end looking package. It emits narrow band of radiation peaking at
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IE-0515HL
940nm.
10msec.
IE-0515HL
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2ACE
Abstract: PD-52BRD infrared circuit diagram
Text: Waitrony Infrared Pin Photo Diode Model No.: PD-52BRD 1. General Description: Dimensions The PD-52BRD consists of a PN junction silicon photo diode with PIN structure mounted in a lens, black epoxy, and end looking package. The lens effect allows an acceptance angle of ±25° measured
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PD-52BRD
PD-52BRD
2ACE
infrared circuit diagram
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IE-0520HP
Abstract: No abstract text available
Text: Waitrony Infrared Emitting Diode_ Module No.: IE-0520HP 1. General Description: Dimensions IE-0520HP is a super high output power GaAlAs infrared light emitting diode, mounted in a clear epoxy end looking package. It emits narrow band of radiation peaking at 940nm.
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IE-0520HP
IE-0520HP
940nm.
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waitrony
Abstract: WPDT-270 photo darlington sensor
Text: Photo Transistor Waitrony Module No.: WPDT-270 1. General Description: The WPDT-270 is a high output NPN photo darlington transistor mounted in a water clear end looking epoxy package. This small photo darlington transistor permits narrow angular response.
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WPDT-270
WPDT-270
PDT-270
waitrony
photo darlington sensor
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pc17t1
Abstract: Waitrony IE-2 PC-17T1
Text: Waitrony Photo Coupler_ Module No.: PC-17T1 1. General Description Dimensions Unit: mm PC-17T1 photo coupler is an optically coupled pair employing a GaAs infrared light emitting diode and a silicon NPN phototransistor — 4.6 - 2. Features >
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PC-17T1
PC-17T1
E107486
Ta-25Â
pc17t1
Waitrony IE-2
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infrared diode 35-L
Abstract: IE-A20H high power diode axial
Text: Waitrony Infrared Emitting Diode_ Module No.: IE-A20H 1. General Description: Dimensions IE-A20H is a high output power GaAlAs axial type infrared light emitting diode, which use a plate surface lead frame in a clear plastic package. 2. Features
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IE-A20H
IE-A20H
infrared diode 35-L
high power diode axial
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IE-1CL3
Abstract: 1CL3 IE 1CL3
Text: Waitrony Infrared Emitting Diode_ Module No.: IE-1CL3 1. General Description: Dimensions IE-1CL3 is a high output power GaAlAs infrared light emitting diode, mounted in a low-cost, end looking ceramic package. It emits narrow band of radiation peaking at 940nm and is
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940nm
IE-1CL3
1CL3
IE 1CL3
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PD-32BRC
Abstract: Photo diode circuit diagram cm2215
Text: Waitrony Infrared Pin Photo Diode Model No.: PD-32BRC 1. General Description: Dimensions The PD-32BRC consists of a PN junction silicon photo diode with PIN structure mounted in a lens, clear epoxy, and end looking package. The lens effect allows an acceptance angle of ±16° measured
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PD-32BRC
PD-32BRC
-25CC
300Lux
200Lux
Photo diode circuit diagram
cm2215
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