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    WEITRON TECHNOLOGY Search Results

    WEITRON TECHNOLOGY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CS-SATDRIVEX2-001 Amphenol Cables on Demand Amphenol CS-SATDRIVEX2-001 Serial ATA Extension Cable - SATA II Drive Extension Cable with Power (6.0 Gbps) 1m Datasheet
    CS-SATDRIVEX2-002 Amphenol Cables on Demand Amphenol CS-SATDRIVEX2-002 Serial ATA Extension Cable - SATA II Drive Extension Cable with Power (6.0 Gbps) 2m Datasheet
    CS-SATDRIVEX2-000.5 Amphenol Cables on Demand Amphenol CS-SATDRIVEX2-000.5 Serial ATA Extension Cable - SATA II Drive Extension Cable with Power (6.0 Gbps) 0.5m Datasheet
    CS-SASDDP8282-000.5 Amphenol Cables on Demand Amphenol CS-SASDDP8282-000.5 29 position SAS to SATA Drive Connector Dual Data Lanes Cable 0.5m Datasheet
    CS-SASDDP8282-001 Amphenol Cables on Demand Amphenol CS-SASDDP8282-001 29 position SAS to SATA Drive Connector Dual Data Lanes Cable 1m Datasheet

    WEITRON TECHNOLOGY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MJE13003B

    Abstract: No abstract text available
    Text: WEITRON MJE13003B High Voltage Fast-switching NPN Power Transistor COLLECTOR 2. P b Lead Pb -Free 1. EMITTER 2. COLLECTOR 3. BASE 3. BASE DESCRIPTION: 1. EMITTER The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching


    Original     		PDF MJE13003B MJE13003B 16-May-08 270TYP

    Untitled

    Abstract: No abstract text available
    Text: WT-264 Series 0606 TOP -Emitting Bicolor 0606 1615 Product Specifications Product WT-264UR/YG WT-264SD/YG WT-264Y/YG WT-264D/YG WT-264USD/UYG WT-264UY/UYG WT-264UD/UYG WT-264USD/NB WT-264UY/NB WT-264UD/NB WEITRON http://www.weitron.com.tw Emission Color


    Original     		PDF WT-264 WT-264UR/YG WT-264SD/YG WT-264Y/YG WT-264D/YG WT-264USD/UYG WT-264UY/UYG WT-264UD/UYG WT-264USD/NB WT-264UY/NB

    Untitled

    Abstract: No abstract text available
    Text: WT-122 Series 0603 Product Specifications Product Emission Color Technology Test Current Luminous Intensity IF (mA) IV (mcd) Forward Voltage VF (V) Orderable Part Number WT-122YG Yellow Green GaP 20 20 typ 2.2 typ WT-122YG-ZZZZ WT-122Y Yellow GaAsP 20 8 typ


    Original     		PDF WT-122 WT-122YG WT-122YG-ZZZZ WT-122Y WT-122Y-ZZZZ WT-122D WT-122D-ZZZZ WT-122SD WT-122SD-ZZZZ WT-122UR

    2N60F

    Abstract: No abstract text available
    Text: 2N60 Surface Mount N-Channel Power MOSFET DRAIN CURRENT P b Lead Pb -Free 2 AMPERES DRAIN SOURCE VOLTAGE 600 VOLTAGE Description: This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the


    Original     		PDF O-251) O-252) O-251 O-252 O-252 12-Apr-2011 2N60F

    Untitled

    Abstract: No abstract text available
    Text: WTC3401 P-Channel Enhancement Mode Power MOSFET 3 DRAIN DRAIN CURRENT -4.2 AMPERES 1 DRAIN SOURCE VOLTAGE GATE -30 VOLTAGE 2 SOURCE Features: 3 *Advanced trench process technology *High Density Cell Design For Ultra Low On-Resistance Maximum Ratings TA=25℃


    Original     		PDF WTC3401 OT-23 03-Sep-2013 OT-23

    DSS SOT23

    Abstract: SOT N45 marking N45
    Text: WTC4501 N-Channel Enhancement Mode Power MOSFET 3 DRAIN DRAIN CURRENT 3.2 AMPERES P b Lead Pb -Free DRAIN SOUCE VOLTAGE 20 VOLTAGE 1 GATE 2 SOURCE Features: * Leading Planar Technology for Low Gate Charge / Fast Switching. * 2.5V Rated for Low Voltage Gate Drive.


    Original     		PDF WTC4501 OT-23 OT-23 06-Nov-09 DSS SOT23 SOT N45 marking N45

    Untitled

    Abstract: No abstract text available
    Text: WTK4435 Surface Mount P-Channel Enhancement Mode MOSFET 8 7 6 D 3 S 5 D 4 G -10 AMPERES DRAIN SOURCE VOLTAGE D S 2 Features: DRAIN CURRENT D S 1 P b Lead Pb -Free -30 VOLTAGE * Super high dense * Cell design for extremely low R DS(ON) * -30V/-10A,R DS(ON)<30mΩ@VGS = -10V


    Original     		PDF WTK4435 -30V/-10A -30V/-7A WTK4435, 09-Jan-2014

    DFN16

    Abstract: No abstract text available
    Text: UF8401MN 8 Line ESD/EMI Protection P b Lead Pb -Free 16 FEATURES: 1 • EMI/RFI Filter with Integrated TVS for ESD Protection ■ ESD Protection to IEC 61000-4-2 (ESD) Level 4, ±15kV (air), ±8kV (contact) ■ Integration of 40 Discrete Components ■ Filter Performance: 25dB Minimum Attenuation: 800MHz to 2.5GHz


    Original     		PDF UF8401MN 800MHz DFN16 29-Oct-07 DFN16

    Untitled

    Abstract: No abstract text available
    Text: UF8401MN 8 Line ESD/EMI Protection P b Lead Pb -Free 16 FEATURES: 1 • EMI/RFI Filter with Integrated TVS for ESD Protection ■ ESD Protection to IEC 61000-4-2 (ESD) Level 4, ±15kV (air), ±8kV (contact) ■ Integration of 40 Discrete Components ■ Filter Performance: 25dB Minimum Attenuation: 800MHz to 2.5GHz


    Original     		PDF UF8401MN 800MHz DFN16 29-Oct-07

    Untitled

    Abstract: No abstract text available
    Text: WOSD03/WOSD05 WOSD12 Surface Mount TVS Diodes Array for ESD Protection TRANSIENT VOLTAGE SUPPRESSORS 300 WATTS 3-12 VOLTS P b Lead Pb -Free FEATURES * ESD Protection to IEC 61000-4-2,30KV(Air), 30KV(Contact) * 300 Watts Peak Power Protection(tp=8/20 uS) * Excellent Clamping Capability


    Original     		PDF WOSD03/WOSD05 WOSD12 OD-323 OD-323 22-Jun-09

    Untitled

    Abstract: No abstract text available
    Text: WOSD03/WOSD05 WOSD12 Surface Mount TVS Diodes Array for ESD Protection TRANSIENT VOLTAGE SUPPRESSORS 300 WATTS 3-12 VOLTS P b Lead Pb -Free FEATURES * ESD Protection to IEC 61000-4-2,30KV(Air), 30KV(Contact) * 300 Watts Peak Power Protection(tp=8/20 uS) * Excellent Clamping Capability


    Original     		PDF WOSD03/WOSD05 WOSD12 OD-323 OD-323 19-Jan-08

    WOSD12

    Abstract: 5D marking 30KV WOSD03 WOSD05 820s
    Text: WOSD03/WOSD05 WOSD12 Surface Mount TVS Diodes Array for ESD Protection TRANSIENT VOLTAGE SUPPRESSORS 300 WATTS 3-12 VOLTS P b Lead Pb -Free FEATURES * ESD Protection to IEC 61000-4-2,30KV(Air), 30KV(Contact) * 300 Watts Peak Power Protection(tp=8/20 uS) * Excellent Clamping Capability


    Original     		PDF WOSD03/WOSD05 WOSD12 OD-323 OD-323 19-Dec-05 WOSD12 5D marking 30KV WOSD03 WOSD05 820s

    Untitled

    Abstract: No abstract text available
    Text: WSR05 LOW CAPACITANCE DIODE ARRAY P b Lead Pb -Free DESCRIPTION: TRANSIENT VOLTAGE SUPPERSSORS 5.0 VOLTS WSR05 are surge rated diode arrays designed to protect high speed data components which are connected to data and transmission lines from overvoltage caused by ESD (electrostatic discharge),


    Original     		PDF WSR05 WSR05 31-Dec-08 OT-143

    BAS516

    Abstract: SC79
    Text: BAS516 High Speed Switching Diodes SWITCHING DIODE 250 mAMPERES 75 VOLTS P b Lead Pb -Free Features: * High switching speed: max. 4 ns * Continuous reverse voltage: max. 75 V * Repetitive peak forward current: max. 500 mA 1 2 Applications: * High-speed switching in e.g. surface mounted circuits.


    Original     		PDF BAS516 OD-523 BAS516 OD-523 06-Jan-06 SC79

    30KV

    Abstract: WOSD03 WOSD05 WOSD12
    Text: WOSD03/WOSD05 WOSD12 Surface Mount TVS Diodes Array for ESD Protection TRANSIENT VOLTAGE SUPPRESSORS 300 WATTS 3-12 VOLTS P b Lead Pb -Free FEATURES * ESD Protection to IEC 61000-4-2,30KV(Air), 30KV(Contact) * 300 Watts Peak Power Protection(tp=8/20 uS) * Excellent Clamping Capability


    Original     		PDF WOSD03/WOSD05 WOSD12 OD-323 OD-323 22-Jun-09 30KV WOSD03 WOSD05 WOSD12

    5A SOD323

    Abstract: WOSD03 WOSD05 WOSD12
    Text: WOSD03/WOSD05 WOSD12 Surface Mount TVS Diodes * “G” Lead Pb -Free FEATURES *Low Leakage Current *300 Watts Peak Power Protection(tp=8/20 uS) *Excellent Clamping Capability *Transient Voltage Suppressors Encapsulated in a SOD-323 Package *Small Package for use in Portable Electronics


    Original     		PDF WOSD03/WOSD05 WOSD12 OD-323 OD-323 23-Jun-05 5A SOD323 WOSD03 WOSD05 WOSD12

    ESD5V0B

    Abstract: No abstract text available
    Text: ESD5V0B3E 2-Line TVS Array Peak Pulse Power 25 Watts Reverse Working Voltage 5.0 VOLTS P b Lead Pb -Free * Halogen-Free Features: * Transient protection for data lines to IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact) IEC 61000-4-4 (EFT) 40A (tp = 5/50ns)


    Original     		PDF 5/50ns) BFBP-03E 02-Apr-08 ESD5V0B

    Untitled

    Abstract: No abstract text available
    Text: ESD0502B3E 2-Line TVS Array Peak Pulse Power 25 Watts Reverse Working Voltage 5.0 VOLTS P b Lead Pb -Free * Halogen-Free Features: * Transient protection for data lines to IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact) IEC 61000-4-4 (EFT) 40A (tp = 5/50ns)


    Original     		PDF ESD0502B3E 5/50ns) BFBP-03E 02-Apr-08

    Untitled

    Abstract: No abstract text available
    Text: ESD3305B6E Low Voltage TVS for ESD Protection Peak Pulse Power 40 Watts Reverse Working Voltage 3.3 VOLTS P b Lead Pb -Free Features: * Transient protection for data lines to IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact) IEC 61000-4-4 (EFT) 40A (tp = 5/50ns)


    Original     		PDF ESD3305B6E 5/50ns) 30-Apr-08

    ESD3305B6E

    Abstract: No abstract text available
    Text: ESD3305B6E Low Voltage TVS for ESD Protection Peak Pulse Power 40 Watts Reverse Working Voltage 3.3 VOLTS P b Lead Pb -Free Features: * Transient protection for data lines to IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact) IEC 61000-4-4 (EFT) 40A (tp = 5/50ns)


    Original     		PDF ESD3305B6E 5/50ns) BFBP-06E BFBP-06E 30-Apr-08 ESD3305B6E

    Untitled

    Abstract: No abstract text available
    Text: WT- 206DV06 A Zener Diode Chips for ESD Protection 1. Feature: 1-2 Silicon Zener diode chips for electrostatic discharge (ESD) protection application. 2. Structure: 2-1 Planar type: Silicon Diode 2-2 Electrodes: Top side:Aluminum Alloy. Back side:Gold Layer.


    Original     		PDF 206DV06 98mils 98mils 12mils 12mils 09-Jun-10

    Untitled

    Abstract: No abstract text available
    Text: WT-106DP14 A Zener Diode Chips for ESD Protection 1. Feature: 1-2 Silicon Zener diode chips for electrostatic discharge (ESD) protection application. 2. Structure: 2-1 Planar type: Silicon Diode 2-2 Electrodes: Top side:Aluminum Alloy(Anode). Back side:Gold Layer(Cathode).


    Original     		PDF WT-106DP14 98mils 98mils 12mils 12mils 09-Jun-10

    3.2 v zener diode

    Abstract: 105um DIODE ZENER X
    Text: WT-Z106P-4-12 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chipDevice NO:WT-Z106P-4-12 2. Structure: 2-1 Planar type: Silicon Diode


    Original     		PDF WT-Z106P-4-12 150mm) 05-Dec-06 3.2 v zener diode 105um DIODE ZENER X

    Untitled

    Abstract: No abstract text available
    Text: WT-106DN09 A Zener Diode Chips for ESD Protection 1. Feature: 1-1 This specification is suitable for N/P zener single-direction structure chips use. 2. Structure: 2-1 Paralleled the LED 2-2 Unity pad metal (one wire bonding applied only) 2-3 One-way Zener diode protection


    Original     		PDF WT-106DN09 98mils 98mils 75mils 75mils 09-Feb-2011