Untitled
Abstract: No abstract text available
Text: W957D6HB 128Mb Async./Burst/Sync./A/D MUX 1. GENERAL DESCRIPTION Winbond x16 ADMUX products are high-speed, CMOS pseudo-static random access memory developed for lowpower, portable applications. The device has a DRAM core organized. These devices are a variation of the industrystandard Flash control interface, with a multiplexed address/data bus. The multiplexed address and data functionality
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W957D6HB
128Mb
A01-004
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PDF
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W958D6DBC
Abstract: No abstract text available
Text: W958D6DB 256Mb Async./Burst/Sync./A/D MUX 1. GENERAL DESCRIPTION Winbond x16 ADMUX products are high-speed, CMOS pseudo-static random access memory developed for lowpower, portable applications. The device has a DRAM core organized. These devices are a variation of the industrystandard Flash control interface, with a multiplexed address/data bus. The multiplexed address and data functionality
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W958D6DB
256Mb
A01-003
W958D6DBC
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PDF
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W968D6DAG
Abstract: No abstract text available
Text: W968D6DA 256Mb Async./Page,Syn./Burst CellularRAM 1. GENERAL DESCRIPTION Winbond CellularRAM products are high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications. The device has a DRAM core organized. These devices include an industrystandard burst mode Flash interface that dramatically increases read/write bandwidth compared with other lowpower SRAM or Pseudo SRAM offerings.
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W968D6DA
256Mb
A01-003
W968D6DAG
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PDF
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W967d6hb
Abstract: W967 CRAM 256mb
Text: W967D6HB 128Mb Async./Page,Syn./Burst CellularRAM 1. GENERAL DESCRIPTION Winbond CellularRAM products are high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications. The device has a DRAM core organized. These devices include an industrystandard burst mode Flash interface that dramatically increases read/write bandwidth compared with other lowpower SRAM or Pseudo SRAM offerings.
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W967D6HB
128Mb
A01-003
W967d6hb
W967
CRAM 256mb
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PDF
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Untitled
Abstract: No abstract text available
Text: W94AD6KB / W94AD2KB 1Gb Mobile LPDDR 1. GENERAL DESCRIPTION W94AD6KB / W94AD2KB is a high-speed Low Power double data rate synchronous dynamic random access memory LPDDR SDRAM , An access to the LPDDR SDRAM is burst oriented. Consecutive memory location in one page can be accessed at a burst length of 2, 4, 8 and 16
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W94AD6KB
W94AD2KB
W94AD2KB
A01-002
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PDF
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Untitled
Abstract: No abstract text available
Text: W94AD6KB / W94AD2KB 1Gb Mobile LPDDR Table of Contents1. 2. 3. 4. 5. 6. 7. 8. GENERAL DESCRIPTION . 4 FEATURES . 4
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W94AD6KB
W94AD2KB
A01-004
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PDF
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Untitled
Abstract: No abstract text available
Text: W94AD6KB / W94AD2KB 1Gb Mobile LPDDR 1. GENERAL DESCRIPTION W94AD6KB / W94AD2KB is a high-speed Low Power double data rate synchronous dynamic random access memory LPDDR SDRAM , An access to the LPDDR SDRAM is burst oriented. Consecutive memory location in one page can be accessed at a burst length of 2, 4, 8 and 16
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W94AD6KB
W94AD2KB
W94AD2KB
A01-003
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PDF
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W949D6
Abstract: W949D6KBHX5I W949D2KB A01-001 W949D W949D2KBJX5I W949D6KBHX winbond 2301 w949d2 W949D6KB
Text: W949D6KB / W949D2KB 512Mb Mobile LPDDR 1. GENERAL DESCRIPTION W949D6KB / W949D2KB is a high-speed Low Power double data rate synchronous dynamic random access memory LPDDR SDRAM , An access to the LPDDR SDRAM is burst oriented. Consecutive memory location in one page can be accessed at a burst length of 2, 4, 8 and 16
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W949D6KB
W949D2KB
512Mb
W949D2KB
A01-001
W949D6
W949D6KBHX5I
A01-001
W949D
W949D2KBJX5I
W949D6KBHX
winbond 2301
w949d2
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PDF
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W94AD6KBHX5I
Abstract: W94AD6KBHX5E W94AD6KB W94AD2KBJX5E W94AD2KB W94AD2KBJX5I
Text: PRELIMINARY W94AD6KB / W94AD2KB 1Gb Mobile LPDDR 1. GENERAL DESCRIPTION W94AD6KB / W94AD2KB is a high-speed Low Power double data rate synchronous dynamic random access memory LPDDR SDRAM , An access to the LPDDR SDRAM is burst oriented. Consecutive memory location in one page can be accessed at a burst length of 2, 4, 8 and 16
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W94AD6KB
W94AD2KB
W94AD2KB
P01-002
W94AD6KBHX5I
W94AD6KBHX5E
W94AD2KBJX5E
W94AD2KBJX5I
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PDF
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Untitled
Abstract: No abstract text available
Text: W949D6DB / W949D2DB 512Mb Mobile LPDDR Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4
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W949D6DB
W949D2DB
512Mb
A01-001
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PDF
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w949d6cbh
Abstract: WINBOND cross reference W949D6CB winbond Mobile LPDDR W949D6CBHX5E winbond W949D6CB W949D6
Text: W949D6CB / W949D2CB 512Mb Mobile LPDDR TABLE OF CONTENTS 1. GENERAL DESCRIPTION . 4 2. FEATURES . 4
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W949D6CB
W949D2CB
512Mb
A01-006
w949d6cbh
WINBOND cross reference
winbond Mobile LPDDR
W949D6CBHX5E
winbond W949D6CB
W949D6
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W948D6FBHX5I
Abstract: 60VFBGA W948D6FBHX W948D6FBHX6I W948D6FBHX-6E
Text: W948D6FB / W948D2FB 256Mb Mobile LPDDR TABLE OF CONTENTS 1. GENERAL DESCRIPTION . 4 2. FEATURES. 4
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W948D6FB
W948D2FB
256Mb
A01-004
W948D6FBHX5I
60VFBGA
W948D6FBHX
W948D6FBHX6I
W948D6FBHX-6E
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PDF
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W947D6HBHX6E
Abstract: W947D6HBHX-6E W947D6HB W947 winbond Mobile LPDDR
Text: W947D6HB / W947D2HB 128Mb Mobile LPDDR TABLE OF CONTENTS 1. GENERAL DESCRIPTION . 4 2. FEATURES. 4
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W947D6HB
W947D2HB
128Mb
A01-003
W947D6HBHX6E
W947D6HBHX-6E
W947
winbond Mobile LPDDR
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PDF
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w949d6cbh
Abstract: A01-007 winbond W949D6CB W949D2CBJX WINBOND cross reference winbond 2301
Text: W949D6CB / W949D2CB 512Mb Mobile LPDDR TABLE OF CONTENTS 1. GENERAL DESCRIPTION . 4 2. FEATURES . 4
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W949D6CB
W949D2CB
512Mb
A01-007
w949d6cbh
A01-007
winbond W949D6CB
W949D2CBJX
WINBOND cross reference
winbond 2301
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vt1631
Abstract: 8375X intel g31 motherboard repair gigabyte g31 MOTHERBOARD SERVICE MANUAL CB-1410 A1 SERVICE MANUAL tv mitsubishi ct 29 b4 est fujitsu fpcap full Socket-462 lg r40 MOTHERBOARD CIRCUIT diagram via vt8235
Text: SERVICE MANUAL FOR 8375X BY: Ally.Yuan Repair Technology Research Department /EDVD Feb.2004 8375X N/B Maintenance CONTENTS 1. Hardware Engineering Specification …………………………………………………………………… 4 1.1 Introduction ……………………………………………………………………………………………………………. 4
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8375X
8375X
KN400A
VT8235
W83L950D
VT1631
VT6307L
intel g31 motherboard repair
gigabyte g31 MOTHERBOARD SERVICE MANUAL
CB-1410 A1
SERVICE MANUAL tv mitsubishi ct 29 b4 est
fujitsu fpcap full
Socket-462
lg r40 MOTHERBOARD CIRCUIT diagram
via vt8235
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BCR100
Abstract: No abstract text available
Text: 70 128Mb/64Mb Async/Page/Burst CellularRAM 1.5 Memory Figure 1: Features • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: 1.7V–1.95V VCC 1.7V–1.95V VCCQ • Random access time: 70ns • Burst mode READ and WRITE access:
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128Mb/64Mb
09005aef81d721fb
pdf/09005aef81d72262
BCR100
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PDF
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MT46H64M16LF
Abstract: No abstract text available
Text: Advance‡ 1Gb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H64M16LF – 16 Meg x 16 x 4 banks MT46H32M32LF – 8 Meg x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site: www.micron.com Features • • • • Table 2: Endur-IC technology
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MT46H64M16LF
MT46H32M32LF
09005aef82846a0b/Source:
09005aef828c2f8f
MT46H64M16LF
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Untitled
Abstract: No abstract text available
Text: Advance‡ 128Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 banks MT46H4M32LF – 1 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)
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128Mb:
MT46H8M16LF
MT46H4M32LF
09005aef82ce3074/Source:
09005aef82ce20c9
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PDF
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Untitled
Abstract: No abstract text available
Text: 512Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H32M16LF – 8 Meg x 16 x 4 banks MT46H16M32LF – 4 Meg x 32 x 4 banks Features Options • • • • • VDD/VDDQ – 1.8V/1.8V – 1.8V/1.2V1 • Configuration – 32 Meg x 16 8 Meg x 16 x 4 banks
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512Mb:
MT46H32M16LF
MT46H16M32LF
09005aef82d5d305/Source:
09005aef82d5d2e7
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PDF
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Untitled
Abstract: No abstract text available
Text: 512Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H32M16LF – 8 Meg x 16 x 4 banks MT46H16M32LF – 4 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)
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512Mb:
MT46H32M16LF
MT46H16M32LF
09005aef82ce3074/Source:
09005aef82ce20c9
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PDF
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MT46H16M32
Abstract: No abstract text available
Text: 512Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H32M16LF – 8 Meg x 16 x 4 banks MT46H16M32LF – 4 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)
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512Mb:
MT46H32M16LF
MT46H16M32LF
09005aef82ce3074/Source:
09005aef82ce20c9
MT46H16M32
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PDF
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MT46H64M16LF
Abstract: No abstract text available
Text: 1Gb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H64M16LF – 16 Meg x 16 x 4 banks MT46H32M32LF – 8 Meg x 32 x 4 banks Features Options continued • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data (DQS) • Internal, pipelined double data rate (DDR)
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MT46H64M16LF
MT46H32M32LF
09005aef82ce3074/Source:
09005aef82cd0158
MT46H64M16LF
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PDF
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elpida lpddr2
Abstract: samsung* lpddr2 Elpida LPDDR2 Memory lpddr2 samsung lpddr2 MT46H16M16LF MT46H8M32LF sac105 micron LPDDR2 X32 elpida memory lpddr2
Text: 256Mb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H16M16LF – 4 Meg x 16 x 4 Banks MT46H8M32LF – 2 Meg x 32 x 4 Banks Features Options • VDD/VDDQ – 1.8V/1.8V • Configuration – 16 Meg x 16 4 Meg x 16 x 4 banks – 8 Meg x 32 (2 Meg x 32 x 4 banks)
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256Mb:
MT46H16M16LF
MT46H8M32LF
60-ball
90-ball
09005aef834bf85b
elpida lpddr2
samsung* lpddr2
Elpida LPDDR2 Memory
lpddr2
samsung lpddr2
MT46H16M16LF
MT46H8M32LF
sac105
micron LPDDR2 X32
elpida memory lpddr2
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A2601
Abstract: No abstract text available
Text: 256Mb: x16, x32 Mobile LPDDR SDRAM Features Mobile LPDDR SDRAM MT46H16M16LF – 4 Meg x 16 x 4 banks MT46H8M32LF – 2 Meg x 32 x 4 banks Features Options • Vdd/Vddq = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)
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256Mb:
MT46H16M16LF
MT46H8M32LF
09005aef834bf85b/Source:
09005aef833c0404
A2601
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PDF
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