Infineon X-GOLD 213
Abstract: X-GOLDTM213 xgold 213 infineon x-gold X-GOLD 208 INFINEON infineon baseband processor x-gold 208 X-GOLD 213 INFINEON xgold X-GOLD x-gold 213
Text: Product Brief X-GOLDTM213 Lowest-cost EDGE Single-Chip Solution for Mobile Internet Browsing & Messaging Main Features THE Infineon X-GOLD 213 is the first Single-Chip in 65nm CMOS technology that integrates Baseband, RF Transceiver, Power Management Unit
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X-GOLDTM213
X-GOLDTM101
X-GOLDTM213
ARM11nces.
B153-H9150-G1-X-7600
NB08-1329
Infineon X-GOLD 213
xgold 213
infineon x-gold
X-GOLD 208 INFINEON
infineon baseband processor x-gold 208
X-GOLD 213 INFINEON
xgold
X-GOLD
x-gold 213
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Untitled
Abstract: No abstract text available
Text: EURO QUARTZ X42 CRYSTALS 4 x 2.5 x 0.6mm SMD 10.0MHz to 60MHz FEATURES Miniature package: 4.0 x 2.5 x 0.6mm Gold-plated ceramic base with metal seam-welded package Very low ageing Designed for hand-held equipment, PDAs, Blue Tooth, GPS High shock and vibration resistance
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60MHz
2x10-8
MIL-STD-202F
2000Hz
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050X050
Abstract: No abstract text available
Text: 9600 Series Headers CCS .050 x.050 Box Headers Specifications Insulator Material: Glass filled polyester, Thermoplastic, 94V-O Nylon-6T, UL Recognized. Contact Material: Copper Alloy Contact Plating: Gold or Tin over .000050” Ni See contact plating options .
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E146967
E176234
96XXS-DX-XX-XX-XX
96XXS-EX-XX-XX-XX
050X050
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Untitled
Abstract: No abstract text available
Text: 9600 Series Headers CCS .050 x.050 Box Headers Specifications Insulator Material: Glass filled polyester, Thermoplastic, 94V-O Nylon-6T, UL Recognized. Contact Material: Copper Alloy Contact Plating: Gold or Tin over .000050” Ni See contact plating options .
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E146967
E176234
96XXS-DX-XX-XX-XX
96XXS-EX-XX-XX-XX
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Untitled
Abstract: No abstract text available
Text: REVISION B TNC-P-C-X-ST-CR4 DESIGNED & DIMENSIONED IN MILLIMETERS[INCHES] GENDER -P: PLUG TERMINATION -CR4: CABLE RG058 TYPE -C: CABLE DO NOT SCALE FROM THIS PRINT ORIENTATION -ST: STRAIGHT PLATING SPECIFICATION -H: HEAVY GOLD (SEE TABLE 1) SUB ASSEMBLY
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RG058)
TNC-SKT-002)
TNC-FER-003)
TNC-INS-002)
CAT-HT-126667-21)
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TR-TSY-00078
Abstract: No abstract text available
Text: CCS 3600 Series Card Edge Connector .150” X .188” Contact Spacing Specifications Features Insulator Material: Glass filled polyester, type PBT, 94 V-O, UL Rated. Contact Material: Phosphor Bronze Alloy Contact Plating: Gold and/or Tin over .000050” Nickel,
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-54BC
125BC
TR-TSY-00078
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Untitled
Abstract: No abstract text available
Text: REVISION A LJRS-8P8C-X-XX PLATING SPECIFICATION -H: HEAVY GOLD LEADSTYLE -01 DO NOT SCALE FROM THIS PRINT .505 12.83 REF .543 13.79 REF "A" "A" .292 7.42 REF SLED-LJ-01 C-213-01-H 26° .232 5.88 C4 .004 "B" C2 "B" .125 3.16 +.008 +0.203 0.000 .0140 - .000 0.36
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SLED-LJ-01
C-213-01-H
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Untitled
Abstract: No abstract text available
Text: CCS 3600 Series Card Edge Connector .150” X .188” Contact Spacing Specifications Features Insulator Material: Glass filled polyester, type PBT, 94 V-O, UL Rated. Contact Material: Phosphor Bronze Alloy Contact Plating: Gold and/or Tin over .000050” Nickel,
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-54BC
125BC
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H00044
Abstract: No abstract text available
Text: PRODUCT NUMBER 7 0 2 8 8 — XZY 23.95 REF. 8 PLATING IN CONTACT AREA PLATING CODE THICKNESS 0.8 urn GOLD -1 0 Y -2 0 Y 2.0 urn GOLD 0.8 um GXT. -9 0 Y 9 CODE FOR IDC SIZE WIRE SIZE 30 AWG. -X 01 -X 0 2 26 AWG. NOTES: 1 BODY MAT’L: LIQUID CRYSTAL POLYMER 30% GLASS
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H00044
H30711
H40511
H40660
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Untitled
Abstract: No abstract text available
Text: I P R O D U C T NR. PLATING CO NTACT AREA: 889 6 1 -1 Y 1 0.8 889 6 1 -2 Y 1 2 ?m ?m GOLD GOLD 88 9 6 1 -3 Y 1 1.3 ? m 8 8 9 6 1 -9 Y 1 0 .8 ? m GXT GOLD I _L I I. P R O D U C T NR. DIM 1.3 ? rn Ni MIN. 8 8 9 6 1 -X 0 1 5 .0 0 REF. 1.3 ? m Ni MIN. 8 8 9 6 1 -X 1 1
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H30159
930J1Q
H30732
H40355
H90430
V9145Q
99Q8Z7
9J0219
9J1122
9JQ219
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BFG92AW
Abstract: transistor marking P8
Text: Product specification Philips Semiconductors BFG92AW BFG92AW/X; BFG92AW/XR NPN 6 GHz wideband transistor MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure BFG92AW P8 • Gold metallization ensures excellent reliability. BFG92AW/X P9 BFG92AW/XR
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BFG92AW
BFG92AW/X;
BFG92AW/XR
OT343
OT343R
BFG92AW/X
BFG92AW/XR
BFG92AW
BFG92AW/X
transistor marking P8
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up/xr+2320
Abstract: No abstract text available
Text: Product specification Philips Semiconductors BFG93AW BFG93AW/X; BFG93AW/XR NPN 7 GHz wideband transistor MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure BFG93AW R8 • Gold metallization ensures excellent reliability. BFG93AW/X R9 BFG93AW/XR
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BFG93AW
BFG93AW/X;
BFG93AW/XR
BFG93AW/X
OT343
OT343R
MSB014
up/xr+2320
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Untitled
Abstract: No abstract text available
Text: ,_ ii X l_ u_ l PLATING CONTACT AREA: U N D ER PLA TIN G L LEN G TH 1.3 p m Ni MIN. 2 1 3 .6 Ni WIN. 3 1 7.1 GOLD 1.3 2 2 .0 ,um GOLD 3 1.3 jum GOLD 9 0 .8 GXT 1.3 fjm pm 1. BO DY MAT'L: LIQUID C RYSTAL P O LY M ER FLAM E RETARD ANT ACC. UL 9 4 - V O
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Untitled
Abstract: No abstract text available
Text: r~ r i i PRO D U C T NR X 85759-XYZZ 1 0 .8 um 2 • ? 2 .0 1.3 9 0 .8 PLATIN G C O NTACT AREA: U N D ER PLA TIN G GOLD 1.3 um Ni m ln . um GOLD 1.3 um Ni m in . um GOLD 1 .3 um Ni m ln . um GXT 1.3 um Ni m in . Y TAILLENGTH 1 4 .3 2 13 .6 3 1 7.1 i i [ i
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85759-XYZZ
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UHF transistor GHz
Abstract: BFG93AW DD44 pa 4010
Text: Product specification Philips Semiconductors BFG93AW BFG93AW/X; BFG93AW/XR NPN 7 G H z w id eb an d tra n s isto r MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure BFG93AW R8 • Gold m etallization ensures excellent reliability. BFG93AW/X
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BFG93AW
BFG93AW/X;
BFG93AW/XR
OT343
OT343R
BFG93AW/X
BFG93AW/XR
BFG93AW
BFG93AW/X
UHF transistor GHz
DD44
pa 4010
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v929
Abstract: No abstract text available
Text: Il 2 PRODUCT NUMBER DESCRIPTION: 57202 - X XX - XX - XX P / N 94 2 5 9 NOTE POLARIZATION NOTE 7 •o P L A T ING S : 0 . 38¿jm G O L D ON CONTACT AREA 3 . 8 1ttm T I N / L E A D O N TAIL G : 0.76um GOLD ON CONTACT AREA 3.8lum TIN/LEAD ON TAIL 0.20um GOLD
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V92944
v929
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Untitled
Abstract: No abstract text available
Text: PRODUCT NUMBER 8 7 6 0 6 -Y X X Ptefal ic ^ p g v i i - g - g - g - g - g - « - « - « - « • — NUMBER OF P O SIT IO N S P E R — PLATING C O D E 3 = 0 .7 6 p m GOLD ON 3 .8 1 p m TIN — LEAD 4 = 5jum T IN -L E A D ON 3 .8 1 p m T IN -L E A D 8 = 0 .3 8 p m GOLD ON
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F00715
F60258
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ic 7905
Abstract: transistor 7905 7905 7904 7905 a 7905 IC vbe 10v, vce 500v NPN Transistor VCB-600V chip die npn transistor
Text: g Xnooab l^bo0„^ STX 7904 /¡2905CHIP HIGH VOLTAGE NPN TRANSISTOR MESA PASSIVATED CONTACT METALLIZATION Base/Emitter: Collector: > 30,000 A Aluminum > 2,000 A Evaporated Gold ASSEMBLY RECOMMENDATIONS Contact Area: .014 x .018 PARAMETER TEST CONDITIONS *
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100uA
500mA
500mA,
100mA
ic 7905
transistor 7905
7905
7904
7905 a
7905 IC
vbe 10v, vce 500v NPN Transistor
VCB-600V
chip die npn transistor
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tcam
Abstract: No abstract text available
Text: r 1 I PRODUCT NUMBER 2 9 3 2 3 6 -X 1 Y 7 1 .9 5 REF. EO T PLATING IN CONTACT AREA THICKNESS PLATING CODE -1 Y Y 0.8 /jm GOLD —2YY 2.0 jum GOLD -3 Y Y 1.3 jum GXT 0.8 jum GXT -9 Y Y UNDERPLATING 1.3 p m Ni MIN. 2.0 nm Ni MIN. 2.0 nim Ni MIN. 1.3 ium Ni MIN.
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transistor marking MTs ghz
Abstract: transistor marking P8 UHF transistor GHz Xr 1075 BFG92AW D032 y1010
Text: Product specification Philips Semiconductors B FG 92A W B FG 92A W /X; B F G 92A W /X R NPN 6 G H z w id eb an d tra n s isto r MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure BFG92AW • Gold metallization ensures excellent reliability.
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BFG92AW
BFG92AW/X;
BFG92AW/XR
OT343
OT343R
BFG92AW/X
BFG92AW/XR
BFG92AW
BFG92AW/X
transistor marking MTs ghz
transistor marking P8
UHF transistor GHz
Xr 1075
D032
y1010
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Untitled
Abstract: No abstract text available
Text: P R O D U C T NR. P R O D U C T NR. DIM 8 8 9 6 3 -1 Y 1 0 .8 ? m GOLD 1.3 ? m Ni M IN . 8 8 9 6 3 -X 0 1 5 .0 0 REF. 8 8 9 6 3 — 2Y1 2 ? m GOLD 1.3 ? m Ni MIN. 8 8 9 6 3 -X 1 1 3 .3 5 REF. 8 8 9 6 3 -3 Y 1 1.3 ? m 8 8 9 6 3 -9 Y 1 0 .8 ? m GXT 1.3 ? m 1.3 ? m
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HJ0045
HJ01S9
H30732
H40355
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Untitled
Abstract: No abstract text available
Text: 1 1 2 PRODUCT NUM BER I 7 4 7 4 4 -X Y Y I 1 PLATING IN CONTACT AREA PLATING CODE THICKNESS — 1YY 0.8 um GOLD -?Y Y 2.0 urn GOLD -3 Y Y -4-YY CUSTOMER -9 Y Y 0.8 um GXT. I 0.50 REF. i 2 AT TIP OF PIN Í4^4|H-H-n 1 2l UNDFRPl ATING 1.3 urn Nl MIN. 2.0 um Ni MIN.
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Untitled
Abstract: No abstract text available
Text: r 1 I P R O D U C T N U M BER 2 9 3 9 2 2 -X 1 Y 8 3 .9 5 REF. i % Id sL a y PLATING IN CONTACT AREA THICKNESS PLATING CODE -1 Y Y 0 .8 um GOLD 2 .0 um GOLD —2YY —3YY 1.3 um GXT -9 Y Y 0 .8 um GXT UNDERPLATING 1.3 um Ni MIN. 2 .0 um Ni MIN. 2 .0 um Ni MIN.
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PE44203
Abstract: No abstract text available
Text: BODY CONTACT INSULATOR MATERIALS B R A SS NICKEL PLATED GOLD PLATED PTFE PASTERNACK ENTERPRISES, INC. P.O B O X 16759, IRVINE, C A 92623 P H O N E {949 261-1920 F A X 949) 261-7451 — - .4 2 5 -— - — .3 2 5 — 100 W E B A D D R E S S : www.pasternack.coin
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PE44203
PE-P195
PE44203
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