avnet
Abstract: MSP430X15X
Text: MSP430x15x, x16x, MSP430x161x MIXED SIGNAL MICROCONTROLLER SLAS368D− OCTOBER 2002− REVISED MARCH 2005 D Low Supply-Voltage Range, 1.8 V . . . 3.6 V D Ultralow-Power Consumption: D D D D D D D D D D D D D D − Active Mode: 330 µA at 1 MHz, 2.2 V
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MSP430x15x,
MSP430x16x,
MSP430x161x
SLAS368D-
MSP430F155:
MSP430F156:
MSP430F157:
MSP430F167:
MSP430F168:
MSP430F169:
avnet
MSP430X15X
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IS42S16160D
Abstract: IS42S16160D-7TLI
Text: IS42S83200D, IS42S16160D IS45S83200D, IS45S16160D 32Meg x 8, 16Meg x16 JUNE 2009 256-MBIT SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 256Mb Synchronous DRAM achieves high-speed
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IS42S83200D,
IS42S16160D
IS45S83200D,
IS45S16160D
32Meg
16Meg
256-MBIT
256Mb
IS42S83200D
IS42S16160D
IS42S16160D-7TLI
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IS42S81600B
Abstract: 42S16800B IS42S16800B-7TLI 2MX16X4 IS42S16800B IS42S16800B-6TL
Text: IS42S81600B IS42S16800B 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM JUNE 2009 FEATURES • Clock frequency: 167, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 128Mb Synchronous DRAM achieves high-speed
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IS42S81600B
IS42S16800B
16Meg
128-MBIT
128Mb
IS42S81600B
42S16800B
IS42S16800B-7TLI
2MX16X4
IS42S16800B
IS42S16800B-6TL
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HS-169
Abstract: No abstract text available
Text: CRYSTAL CLOCK OSCILLATORS Data Sheet 9826B Rev. G HS-169 Single Frequency Oscillator 53.125MHz Description The HS-169 crystal oscillator is designed to support the TachyonTM clocking requirements at 53.125MHz. Features • Meets HP TACHYONTM Clock Generator
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9826B
HS-169
125MHz
HS-169
125MHz.
3000g
50ppm
12kHz
20MHz.
100ppm
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GS88218
Abstract: GS88236
Text: Preliminary GS88218/36B-11/11.5/100/80/66 119-Bump BGA Commercial Temp Industrial Temp MHz 512K x 18, 256K x 36 ByteSafe 100 MHz–66 3.3 V VDD 8Mb S/DCD Sync Burst SRAMs 3.3 V and 2.5 V I/O Features on every cycle with no degradation of chip performance.
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GS88218/36B-11/11
119-Bump
x16/x32
GS88218
GS88236
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2MX16X4
Abstract: IS42S32400AL
Text: IS42S81600AL, IS42LS81600AL IS42S16800AL, IS42LS16800AL IS42S32400AL, IS42LS32400AL 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT LOW-POWER SYNCHRONOUS DRAM ISSI PRELIMINARY INFORMATION SEPTEMBER 2003 • Clock frequency: 133, 100, MHz OVERVIEW ISSI's 128Mb Low - Power Synchronous DRAM achieves
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IS42S81600AL,
IS42LS81600AL
IS42S16800AL,
IS42LS16800AL
IS42S32400AL,
IS42LS32400AL
16Meg
128-MBIT
128Mb
2MX16X4
IS42S32400AL
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Untitled
Abstract: No abstract text available
Text: ISSI IS43R16800A 8Meg x 16 128-MBIT DDR SDRAM PRELIMINARY INFORMATION JULY 2005 FEATURES DEVICE OVERVIEW • • • • ISSI’s 128-Mbit DDR SDRAM achieves high-speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 134,217,728-bit memory
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IS43R16800A
128-MBIT
728-bit
32M-bit
16-bit
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is42s16320
Abstract: IS42S16320B-7BLI is42s16320b IS42S16320B-7TLI IS42S86400B IS42S86400B-7TL IS42S16320B-7BL MA3006 D1130
Text: IS42S86400B IS42S16320B, IS45S16320B 64M x 8, 32M x 16 DECEMBER 2009 512Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed
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IS42S86400B
IS42S16320B,
IS45S16320B
512Mb
IS42/45S16320B
IS42/45S16320B
is42s16320
IS42S16320B-7BLI
is42s16320b
IS42S16320B-7TLI
IS42S86400B
IS42S86400B-7TL
IS42S16320B-7BL
MA3006
D1130
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9826B
Abstract: No abstract text available
Text: CRYSTAL CLOCK OSCILLATORS Data Sheet 9826B Rev. E HS-169 Single Frequency Oscillator 53.125MHz Description The HS-169 crystal oscillator is designed to support the TachyonTM clocking requirements at 53.125MHz. Features • Meets HP TACHYONTM Clock Generator
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9826B
HS-169
125MHz
HS-169
125MHz.
3000g
consumptio00
50ppm
100ppm
50ppm
9826B
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Untitled
Abstract: No abstract text available
Text: IS42S86400B IS42S16320B, IS45S16320B 64M x 8, 32M x 16 SEPTEMBER 2009 512Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed
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IS42S86400B
IS42S16320B,
IS45S16320B
512Mb
IS42/45S16320B
IS42S86400B
54-pin
IS42/45S16320B
IS42S86400B,
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Untitled
Abstract: No abstract text available
Text: IS42S86400B IS42S16320B 64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM PRELIMINARY INFORMATION MARCH 2008 FEATURES • Clock frequency: 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed
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IS42S86400B
IS42S16320B
512Mb
IS42S86400B
54-pin
54-ball
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DDR333
Abstract: IS43R16800A-6
Text: ISSI IS43R16800A-6 8Meg x 16 128-MBIT DDR SDRAM PRELIMINARY INFORMATION APRIL 2006 FEATURES DEVICE OVERVIEW • • • • ISSI’s 128-Mbit DDR SDRAM achieves high-speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 134,217,728-bit memory
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IS43R16800A-6
128-MBIT
728-bit
32M-bit
16-bit
DDR333
IS43R16800A-6
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add round key for aes algorithm
Abstract: detail of half adder ic DIN 5463 2-bit half adder handbook texas instruments IC to design 2 by 2 binary multiplier SE 135 pin configuration verilog code for twiddle factor ROM transistor c789 6A ep3sl1501152
Text: Stratix III Device Handbook, Volume 1 101 Innovation Drive San Jose, CA 95134 www.altera.com Software Version: Document Version: Document Date: 10.0 2.1 July 2010 Copyright © 2010 Altera Corporation. All rights reserved. Altera, The Programmable Solutions Company, the stylized Altera logo, specific device designations, and all other
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Untitled
Abstract: No abstract text available
Text: MSP430x15x, x16x, MSP430x161x MIXED SIGNAL MICROCONTROLLER SLAS368D− OCTOBER 2002− REVISED MARCH 2005 D Low Supply-Voltage Range, 1.8 V . . . 3.6 V D Ultralow-Power Consumption: D D D D D D D D D D D D D D − Active Mode: 330 µA at 1 MHz, 2.2 V
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MSP430x15x,
MSP430x16x,
MSP430x161x
SLAS368D-
MSP430F155:
MSP430F156:
MSP430F157:
MSP430F167:
MSP430F168:
MSP430F169:
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Untitled
Abstract: No abstract text available
Text: S3C24A0 32-BIT CMOS MICROCONTROLLER USER'S MANUAL Revision 0.3 Important Notice The information in this publication has been carefully checked and is believed to be entirely accurate at the time of publication. Samsung assumes no responsibility, however, for possible errors or
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S3C24A0
32-BIT
S3C24A0
50Typ
337-FBGA-1313
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Untitled
Abstract: No abstract text available
Text: CRYSTAL CLOCK OSCILLATORS Data Sheet 9826B Rev. F HS-169 Single Frequency Oscillator 53.125MHz Description The HS-169 crystal oscillator is designed to support the TachyonTM clocking requirements at 53.125MHz. Features • Meets HP TACHYONTM Clock Generator
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HS-169
125MHz
9826B
HS-169
125MHz.
3000g
50ppm
12kHz
20MHz.
100ppm
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IS42S16160G-5BL
Abstract: IS42S83200G IS42S16160G5BL
Text: IS42S83200G, IS42S16160G IS45S83200G, IS45S16160G 32Meg x 8, 16Meg x16 JANUARY 2013 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200,166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge
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IS42S83200G,
IS42S16160G
IS45S83200G,
IS45S16160G
32Meg
16Meg
256Mb
54-Pin
Alloy42
IS42S16160G-5BL
IS42S83200G
IS42S16160G5BL
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HA-160
Abstract: HS-160
Text: CRYSTAL CLOCK OSCILLATORS Data Sheet 0016H Rev. G TTL HA-160 Series Description The HA-160 Series of quartz crystal oscillators are general purpose TTL oscillators. All units are resistance welded in an all metal package, offering RFI shielding, and are designed to survive standard wave soldering
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0016H
HA-160
3000g
50ppm
12kHz
20MHz.
100ppm
50ppm
25ppm
HS-160
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Untitled
Abstract: No abstract text available
Text: IS45S81600B IS45S16800B ISSI 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM PRELIMINARY INFORMATION AUGUST 2005 • Clock frequency: 143, 100 MHz OVERVIEW ISSI's 128Mb Synchronous DRAM achieves high-speed • Fully synchronous; all signals referenced to a
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IS45S81600B
IS45S16800B
16Meg
128-MBIT
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Untitled
Abstract: No abstract text available
Text: IS42S83200B IS42S16160B ISSI 32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM PRELIMINARY INFORMATION SEPTEMBER 2005 • Clock frequency: 166, 143 MHz OVERVIEW ISSI's 256Mb Synchronous DRAM achieves high-speed • Fully synchronous; all signals referenced to a
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IS42S83200B
IS42S16160B
32Meg
16Meg
256-MBIT
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IS42S16160D-7T
Abstract: No abstract text available
Text: IS42S83200D, IS42S16160D IS45S83200D, IS45S16160D 32Meg x 8, 16Meg x16 PRELIMINARY INFORMATION JULY 2008 256-MBIT SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 256Mb Synchronous DRAM achieves high-speed
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IS42S83200D,
IS42S16160D
IS45S83200D,
IS45S16160D
32Meg
16Meg
256-MBIT
IS42S16160D-7T
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RG59 75 ohms coaxial cable
Abstract: 75 ohms coaxial cable cctv signal and power cable for cctv 20AWG RG59 75 ohms coaxial cable with power cable
Text: POST RG59 SIAMESE 20AWG BC 95% BC BRAID 1000’ WOODEN SPOOL part number: 107-1947WH591ws pg. 1 APPROVALS: MARKETING TECHNICAL SALES FINAL DATE: THE INFORMATION CONTAINED IN THIS DOCUMENT IS PROPRIETARY TO VERTICAL CABLE AND MAY NOT BE DISCLOSED OR TRANSMITTED TO ANY OTHER
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20AWG
107-1947WH591ws
107-1947WH/591WS
18AWG
RG59/U
E312655
RG59 75 ohms coaxial cable
75 ohms coaxial cable
cctv
signal and power cable for cctv
RG59 75 ohms coaxial cable with power cable
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RG59 SIAMESE dIRECT BURIAL cable
Abstract: 18AWG PE-75 20AWG
Text: RG59 SIAMESE WITH 95% COPPER BRAID DIRECT BURIAL SKU: 107-2313/DB/BK Coax Construction DESCRIPTION RG59 Siamese Direct Burial, 20AWG Solid Bare Copper Conductor with 95% Bare Copper Braid, 18AWG (2) Conductors, CL2, CM, Polythylene Jacket, 500ft. FEATURES
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107-2313/DB/BK
20AWG
18AWG
500ft.
20AWG
500ft
005mm
20AWG)
x16x9x0
RG59 SIAMESE dIRECT BURIAL cable
18AWG
PE-75
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Untitled
Abstract: No abstract text available
Text: >kiyjxi>ki CMOS 12-Bit A /D Converters With Ttack-and-Hold _ Features The MAX163, MAX164, and MAX167 are com plete CM O S sam pling 12-bit a n a lo g -to -d ig ita l converters ADC s that co m b in e an o n -ch ip tra ck-a n d -h o ld and
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OCR Scan
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12-Bit
MAX163,
MAX164,
MAX167
33/us
33/js
32/E2
20-PIN
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