XA2 MMIC Search Results

XA2 MMIC Result Highlights (4)

Part	ECAD Model	Manufacturer	Description	Download	Buy
ISL55016IRTZ-T7		Renesas Electronics Corporation	MMIC Silicon Bipolar Differential Amplifier
ISL55014IEZ-T7		Renesas Electronics Corporation	MMIC Silicon Bipolar Broadband Amplifier
ISL55012IEZ-EVAL		Renesas Electronics Corporation	MMIC Silicon Bipolar Broadband Amplifier Evaluation Board
ISL55015IEZ-T7		Renesas Electronics Corporation	MMIC Silicon Bipolar Broadband Amplifier

XA2 MMIC Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
XA2 MMIC Abstract: No abstract text available Text: Preliminary Preliminary Product Description Stanford Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular	Original	SXA-289 SXA-289 100mA EDS-100622 XA2 MMIC	PDF
Xa2 TRANSISTOR Abstract: SXH-189 6 ghz amplifier 20w Text: Preliminary Preliminary Product Description SXH-189 Stanford Microdevices’ SXH-189 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMICs housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth	Original	SXH-189 SXH-189 39dBm 1500mW 100mW EDS-101247 Xa2 TRANSISTOR 6 ghz amplifier 20w	PDF
Xa2 TRANSISTOR Abstract: SXH-189 AN023 Text: Preliminary Preliminary Product Description Stanford Microdevices’ SXH-189 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMICs housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth	Original	SXH-189 SXH-189 EDS-101247 Xa2 TRANSISTOR AN023	PDF
XA2 MMIC Abstract: Xa2 TRANSISTOR Text: Preliminary Preliminary Product Description SXA-289 Stanford Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular	Original	SXA-289 SXA-289 EDS-100622 XA2 MMIC Xa2 TRANSISTOR	PDF
XA2 MMIC Abstract: MPO-100136 TOP MARKING C1 ROHM lot No Text: Preliminary Product Description SXA-289 Sirenza Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable	Original	SXA-289 SXA-289 MPO-100136 016REF 118REF 041REF 015TYP EDS-100622 XA2 MMIC TOP MARKING C1 ROHM lot No	PDF
XA2 MMIC Abstract: TOP MARKING C1 ROHM lot No MPO-100136 SIRENZA Sirenza C4 marking Text: Preliminary Product Description SXA-289 Sirenza Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable	Original	SXA-289 SXA-289 MPO-100136 016REF 118REF 041REF 015TYP EDS-100622 XA2 MMIC TOP MARKING C1 ROHM lot No SIRENZA Sirenza C4 marking	PDF
Sirenza amplifier SOT-89 Marking Abstract: .XA2 Text: Not Recommended for New Designs Product Description SXH-189 Sirenza Microdevices’ SXH-189 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMICs housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth	Original	SXH-189 SXH-189 SXA-289 016REF 118REF 041REF EDS-101247 Sirenza amplifier SOT-89 Marking .XA2	PDF
Xa2 TRANSISTOR Abstract: XA2 MMIC SXA-289 Sirenza amplifier SOT-89 marking XA2 EDS-100622 RF transistor marking IN SOT-89 sxa289 TOP MARKING C1 ROHM ROHM SOT89 MARKING Text: Preliminary Product Description SXA-289 Sirenza Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable	Original	SXA-289 SXA-289 016REF 118REF 041REF EDS-100622 Xa2 TRANSISTOR XA2 MMIC Sirenza amplifier SOT-89 marking XA2 RF transistor marking IN SOT-89 sxa289 TOP MARKING C1 ROHM ROHM SOT89 MARKING	PDF
Untitled Abstract: No abstract text available Text: Preliminary Preliminary Product Description SXH-189 Stanford Microdevices’ SXH-189 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMICs housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth	Original	SXH-189 SXH-189 EDS-101247	PDF
Xa2 TRANSISTOR Abstract: transistor 289 MMIC "SOT 89" marking SXA-289 rf power amplifier 850 MHZ Text: Preliminary Product Description Stanford Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable	Original	SXA-289 016REF 118REF 041REF EDS-100622 Xa2 TRANSISTOR transistor 289 MMIC "SOT 89" marking rf power amplifier 850 MHZ	PDF
SXT-289 Abstract: transistor 289 marking 25 mmic sot-89 MMIC "SOT 89" marking Xa2 marking Xa2 TRANSISTOR xamp 034 XA2 MMIC Text: Product Description Stanford Microdevices’ SXT-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth	Original	SXT-289 Pate02 016REF 118REF 041REF EDS-101157 transistor 289 marking 25 mmic sot-89 MMIC "SOT 89" marking Xa2 marking Xa2 TRANSISTOR xamp 034 XA2 MMIC	PDF