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    Y1 MARKING TRANSISTOR SOT23 Search Results

    Y1 MARKING TRANSISTOR SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    Y1 MARKING TRANSISTOR SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ss8050 sot-23

    Abstract: SS8050 sot-23 Y1 ss8550 sot-23 SS8050 Y1 SOT-23 SS8050 Y1 SS8050 equivalent SS8050 sot-23 equivalent ss8550 Y1 marking transistor sot23
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SS8050 SOT-23 TRANSISTOR NPN 1. BASE FEATURES Complimentary to SS8550 2. EMITTER 3. COLLECTOR MARKING: Y1 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


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    PDF OT-23 SS8050 OT-23 SS8550 ss8050 sot-23 SS8050 sot-23 Y1 ss8550 sot-23 SS8050 Y1 SOT-23 SS8050 Y1 SS8050 equivalent SS8050 sot-23 equivalent ss8550 Y1 marking transistor sot23

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SS8050 SOT-23 TRANSISTOR NPN 1. BASE FEATURES Complimentary to SS8550 2. EMITTER 3. COLLECTOR MARKING: Y1 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


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    PDF OT-23 SS8050 OT-23 SS8550 100mA 800mA 800mA, 30MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SS8050 SOT-23 TRANSISTOR NPN 1. BASE FEATURES Complimentary to SS8550 2. EMITTER 3. COLLECTOR MARKING: Y1 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter


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    PDF OT-23 SS8050 OT-23 SS8550 100mA 800mA 800mA, 30MHz

    ss8050 sot-23

    Abstract: SS8050 sot-23 Y1 Y1 SOT-23 SS8050 Y1 ss8050 Y1 TRANSISTOR MARKING SOT23 5 marking y1 sot-23 transistor marking y1 ss8550 sot-23 y1 sot23
    Text: SS8050 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complimentary to SS8550 MARKING: Y1 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage


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    PDF OT-23 SS8050 OT-23 SS8550 800mA 800mA, 30MHz 100mA ss8050 sot-23 SS8050 sot-23 Y1 Y1 SOT-23 SS8050 Y1 ss8050 Y1 TRANSISTOR MARKING SOT23 5 marking y1 sot-23 transistor marking y1 ss8550 sot-23 y1 sot23

    mc33263

    Abstract: IR P 648 H 8 PIN IC
    Text: MC33263 Ultra Low Noise 150 mA Low Dropout Voltage Regulator with ON/OFF Control Housed in a SOT23–L package, the MC33263 delivers up to 150 mA where it exhibits a typical 180 mV dropout. With an incredible noise level of 25 mVRMS over 100 Hz to 100 kHz, with a


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    PDF MC33263 r14525 MC33263/D IR P 648 H 8 PIN IC

    component marking Y1 sot23

    Abstract: 28R2 marking code 10 sot23 sot23 transistor marking y2 30R2 32R2 38R2 47R2 MC33263
    Text: MC33263 Ultra Low Noise 150 mA Low Dropout Voltage Regulator with ON/OFF Control Housed in a SOT23–L package, the MC33263 delivers up to 150 mA where it exhibits a typical 180 mV dropout. With an incredible noise level of 25 mVRMS over 100 Hz to 100 kHz, with a


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    PDF MC33263 MC33263 r14525 MC33263/D component marking Y1 sot23 28R2 marking code 10 sot23 sot23 transistor marking y2 30R2 32R2 38R2 47R2

    Untitled

    Abstract: No abstract text available
    Text: MC33263 Ultra Low Noise 150 mA Low Dropout Voltage Regulator with ON/OFF Control Housed in a SOT23–L package, the MC33263 delivers up to 150 mA where it exhibits a typical 180 mV dropout. With an incredible noise level of 25 mVRMS over 100 Hz to 100 kHz, with a


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    PDF MC33263 r14525 MC33263/D

    47R2

    Abstract: 28R2 30R2 32R2 38R2 MC33263 Nippon capacitors
    Text: Order this document by MC33263/D Advance Information MC33263 Ultra Low Noise 150 mA Low Dropout Voltage Regulator with ON/OFF Control Housed in a SOT23–L package, the MC33263 delivers up to 150 mA where it exhibits a typical 180 mV dropout. With an incredible noise level of


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    PDF MC33263/D MC33263 MC33263 47R2 28R2 30R2 32R2 38R2 Nippon capacitors

    Mark Y2 SOT

    Abstract: SOT23 MARK Y2 28R2 30R2 32R2 38R2 47R2 MC33263
    Text: Order this document by MC33263/D MC33263 Ultra Low Noise 150 mA Low Dropout Voltage Regulator with ON/OFF Control Housed in a SOT23–L package, the MC33263 delivers up to 150 mA where it exhibits a typical 180 mV dropout. With an incredible noise level of


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    PDF MC33263/D MC33263 MC33263 Mark Y2 SOT SOT23 MARK Y2 28R2 30R2 32R2 38R2 47R2

    SS8050

    Abstract: 2ss8050 MARKING Y1 TRANSISTOR transistor marking y1 SS8050 sot-23 Y1 ss8050 sot-23 SS8050 Y1 ss8050 Y1 SOT-23 ss8050 equivalent transistor y1
    Text: SS8050 NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES      A L Complimentary to SS8550 Power Dissipation PCM : 0.3W Collector Current


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    PDF SS8050 OT-23 SS8550 100mA 800mA 800mA, 30MHz 26-Oct-2009 SS8050 2ss8050 MARKING Y1 TRANSISTOR transistor marking y1 SS8050 sot-23 Y1 ss8050 sot-23 SS8050 Y1 ss8050 Y1 SOT-23 ss8050 equivalent transistor y1

    Untitled

    Abstract: No abstract text available
    Text: BC847BFA 45V NPN SMALL SIGNAL TRANSISTOR IN DFN0806 Features Mechanical Data • BVCEO > 45V   IC = 100mA high Collector Current   PD = 435mW Power Dissipation  0.48mm package footprint, 16 times smaller than SOT23  Moisture Sensitivity: Level 1 per J-STD-020


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    PDF BC847BFA DFN0806 100mA 435mW J-STD-020 MIL-STD-202, X2-DFN0806-3 BC857BFA DS36019

    Untitled

    Abstract: No abstract text available
    Text: BC857BFA 45V PNP SMALL SIGNAL TRANSISTOR IN DFN0806 Features Mechanical Data • BVCEO > -45V   IC = -100mA high Collector Current   PD = 435mW Power Dissipation  0.48mm package footprint, 16 times smaller than SOT23  Moisture Sensitivity: Level 1 per J-STD-020


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    PDF BC857BFA DFN0806 -100mA 435mW J-STD-020 BC847BFA MIL-STD-202, AEC-Q101 BC857FA DS36018

    Untitled

    Abstract: No abstract text available
    Text: MMBT3904FA 40V NPN SMALL SIGNAL TRANSISTOR IN DFN0806 Features Mechanical Data • BVCEO > 40V   IC = 200mA high Collector Current      PD = 435mW Power Dissipation 2 0.48mm package footprint, 16 times smaller than SOT23 0.4mm height package minimizing off-board profile


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    PDF MMBT3904FA DFN0806 200mA 435mW MMBT3906FA AEC-Q101 X2-DFN0806-3 J-STD-020 DS36016

    Untitled

    Abstract: No abstract text available
    Text: MMBT3906FA 40V PNP SMALL SIGNAL TRANSISTOR IN DFN0806 Features Mechanical Data • BVCEO > -40V   IC = -200mA high Collector Current      PD = 435mW Power Dissipation 2 0.48mm package footprint, 16 times smaller than SOT23 0.4mm height package minimizing off-board profile


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    PDF MMBT3906FA DFN0806 -200mA 435mW MMBT3904FA AEC-Q101 X2-DFN0806-3 J-STD-020 DS36017

    SS8050 sot-23 Y1

    Abstract: Y1 SOT-23 SS8050 Y1 ss8050 sot-23 SS8050 marking y1 sot-23 ss8050 equivalent marking Y1 transistor y1 SOT23 transistor marking y1
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES SS8050 Pb z Collector Current. IC= 1.5A) z Complementary To SS8550. z Collector dissipation:PC=300mW(TC=25℃ Lead-free APPLICATIONS z High Collector Current. SOT-23


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    PDF SS8050 SS8550. 300mW OT-23 BL/SSSTC086 SS8050 sot-23 Y1 Y1 SOT-23 SS8050 Y1 ss8050 sot-23 SS8050 marking y1 sot-23 ss8050 equivalent marking Y1 transistor y1 SOT23 transistor marking y1

    Untitled

    Abstract: No abstract text available
    Text: SS8050 NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-23 Power dissipation PCM : 0.3 W Collector Current ICM : 1.5 A Collector-base voltage V BR CBO : 40 V


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    PDF SS8050 OT-23 500mA 30MHz 01-June-2005

    Untitled

    Abstract: No abstract text available
    Text: Transistors Transistor T SMD Type Product specification KST8050 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Collector Current: IC=1.5A 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01


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    PDF KST8050 OT-23

    MMSS8050

    Abstract: y1 npn gk120 800ma marking y1 sot-23 y1 marking code transistor Y1 SOT-23
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMSS8050 Features • • • • • • SOT-23 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.


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    PDF MMSS8050 OT-23 625Watts -55OC OT-23 50mAdc, 10Vdc, 30MHz) MMSS8050 y1 npn gk120 800ma marking y1 sot-23 y1 marking code transistor Y1 SOT-23

    y1 npn

    Abstract: transistor marking y1
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMSS8050 Features • • • • • • SOT-23 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.


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    PDF MMSS8050 OT-23 625Watts -55OC OT-23 100uAdc, 40Vdc, 20Vdc, y1 npn transistor marking y1

    MMSS8050

    Abstract: marking y1 sot-23 Y1 SOT-23 800ma marking Y1 transistor sot-23 MARKING CODE 21 y1 npn
    Text: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 MMSS8050 Features • • • • • • SOT-23 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation. Collector-current 1.5A Collector-base Voltage 40V


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    PDF MMSS8050 OT-23 625Watts -55OC OT-23 50mAdc, 10Vdc, 30MHz) MMSS8050 marking y1 sot-23 Y1 SOT-23 800ma marking Y1 transistor sot-23 MARKING CODE 21 y1 npn

    Untitled

    Abstract: No abstract text available
    Text: Back MC33263 Ultra Low Noise 150 mA Low Dropout Voltage Regulator with ON/OFF Control http://onsemi.com 6 1 PIN CONNECTIONS AND MARKING DIAGRAMS SOT–23L ON/OFF 1 GND 2 BYPASS 3 Features: OFF, no load • • • • • • • • • • Current of 100 mA


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    PDF MC33263 r14525 MC33263/D

    28R2

    Abstract: 30R2 32R2 MC33263 transistor marking code NW 38R2
    Text: MC33263 Ultra Low Noise 150 mA Low Dropout Voltage Regulator with ON/OFF Control http://onsemi.com 6 1 PIN CONNECTIONS AND MARKING DIAGRAMS SOT–23L ON/OFF 1 GND 2 BYPASS 3 Features: OFF, no load • • • • • • • • • • Current of 100 mA


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    PDF MC33263 r14525 MC33263/D 28R2 30R2 32R2 MC33263 transistor marking code NW 38R2

    SS8050LT

    Abstract: 8050LT1
    Text: DONGGUAN FORWARD SEMICONDUCTOR CO.,LTD SOT-23 Plastic-Encapsulate Transistors SS8050LT1 TRANSISTOR NPN FEATURES Power dissipation PCM: W(Tamb=25℃) 0.3 Collector current ICM: 1.5 A 40 V Collector-base voltage V(BR)CBO: Operating and storage junction temperature range


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    PDF OT-23 SS8050LT1 100mA 800mA 30MHZ 8050LT1 SS8050LT

    318J-01

    Abstract: Nippon capacitors A1 GNC 318J
    Text: Order this document by MC33263/D MOTOROLA Advance Information U ltra Low Noise ISO mA Low Dropout Voltage Regulator w ith ON/OFF Control Housed in a SOT23-L package, the MC33263 delivers up to 150 mA where it exhibits a typical 180 mV dropout. With an incredible noise level of


    OCR Scan
    PDF MC33263/D OT23-L MC33263 C33263D 318J-01 Nippon capacitors A1 GNC 318J