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    YG811S09R Search Results

    YG811S09R Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    YG811S09R Fuji Electric Schottky Barrier Diode Original PDF
    YG811S09R Fuji Electric Schottky barrier diode Original PDF

    YG811S09R Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: YG811S09R 90V / 5A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10.5±0.5 ø3.2 4.5±0.2 +0.2 -0.1 Features Low VF Super high speed switching. High reliability by planer design. 15±0.3 1.2±0.2 13Min 3.7±0.2 2.7±0.2 6.3 2.7±0.2 0.7±0.2 0.6±0.2


    Original     		PDF YG811S09R O-22OF15) 13Min SC-67

    Untitled

    Abstract: No abstract text available
    Text: YG811S09R 90V / 5A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10.5±0.5 ø3.2 4.5±0.2 +0.2 -0.1 Features Low VF Super high speed switching. High reliability by planer design. 15±0.3 1.2±0.2 13Min 3.7±0.2 2.7±0.2 6.3 2.7±0.2 0.7±0.2 0.6±0.2


    Original     		PDF YG811S09R O-22OF15) 13Min SC-67

    YG811S09R

    Abstract: No abstract text available
    Text: YG811S09R 90V / 5A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10.5±0.5 ø3.2 4.5±0.2 +0.2 -0.1 Features Low VF Super high speed switching. High reliability by planer design. 15±0.3 1.2±0.2 13Min 3.7±0.2 2.7±0.2 6.3 2.7±0.2 0.7±0.2 0.6±0.2


    Original     		PDF YG811S09R O-22OF15) 13Min SC-67 YG811S09R

    SD-46 Diode

    Abstract: Schottky 30A 40v schottky diode 60V 5A diode Schottky Diode 20V 5A Schottky Diode 40V 2A 5A schottky 60V 3A diode ERA81-004 ERA83-006
    Text: Schottky-Barrier Diode SBD Single Device Type Features Page VRRM IF Package SCHOTTKY BARRIER DIODE (30V/2.0A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (40V/0.6A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (60V/1A) SCHOTTKY BARRIER DIODE


    Original     		PDF 5V/10A) 500ns, SD-46 Diode Schottky 30A 40v schottky diode 60V 5A diode Schottky Diode 20V 5A Schottky Diode 40V 2A 5A schottky 60V 3A diode ERA81-004 ERA83-006

    mp2a5100

    Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
    Text: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors


    Original     		PDF RH011h 2007-10B120FIS mp2a5100 ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28

    TL130

    Abstract: tc122 25 8 4 yg802c10 SD883-04 SD833-04 LM3661TL-1.40 TC8520 tc9145 TS802C09 ERA82-004
    Text: 整流ダイオード / Rectifier Diodes • ショットキーバリアダイオード Schottky-Barrier Diodes（SBD） シングル 1 in one-package 形 式 Device type ERA82-004 SC802-04 SC802-06 SC802-09 ERA83-004 ERA83-006 ERA81-004 ERA84-009 ERA85-009


    Original     		PDF ERA82-004 SC802-04 SC802-06 SC802-09 ERA83-004 ERA83-006 ERA81-004 ERA84-009 ERA85-009 CB803-03 TL130 tc122 25 8 4 yg802c10 SD883-04 SD833-04 LM3661TL-1.40 TC8520 tc9145 TS802C09 ERA82-004

    yg802c10

    Abstract: LM3661TL-1.40 YG803C04 YG803C06 TL1115 tc-118 sd TL130 YG805C10 YG835C04 YG811S04
    Text: 整流ダイオード / Rectifier Diodes • ショットキーバリアダイオード Schottky-Barrier Diodes（SBD） シングル 1 in one-package 形 式 Device type SMD 絶対最大定格 対応品 Maximum rating VRRM IF AV ＊1 Volts Amps. 接合保存温度


    Original     		PDF O220AB O220F TS805C04 TS805C06 TP805C04 ESAC83-004 ESAC83M-004R ESAC83M-006R YG805C04R YG805C06R yg802c10 LM3661TL-1.40 YG803C04 YG803C06 TL1115 tc-118 sd TL130 YG805C10 YG835C04 YG811S04

    YG811S06

    Abstract: SD883-04 SD833 ERA82-004 ESAB82-004 ESAB85-009 ESAC82-004 TP801C04 TP801C06 TP802C04
    Text: Schottky-barrier diode Quick Selection Guide Nov-01 SBD Single Package VRRM Volts 20 30 40 Io 45 60 O O O Lead O O O O O O O O O O O O O O SC(SMD) O O SD(SMD) O O O K-pack(SMD) K-pack TO-220AB O O O O O O TO-220F O O O O TO-3P M5R POWER M6R M8R M6R O O O


    Original     		PDF Nov-01 O-220AB O-220F ERA82-004 ERA83-004 ERA81-004 O-220 ERA83-006 ERA84-009 ERA85-009 YG811S06 SD883-04 SD833 ERA82-004 ESAB82-004 ESAB85-009 ESAC82-004 TP801C04 TP801C06 TP802C04

    schottky diode 60V 5A

    Abstract: 30A high speed diode Schottky Diode 20V 5A Schottky diode high reverse voltage marking code 1A diode Schottky Diode 40V 2A Schottky Barrier 3A diode schottky code 10 SCHOTTKY BARRIER DIODE ERG81-004
    Text: Schottky-Barrier Diode SBD Single Device Type Features Page VRRM IF Package SCHOTTKY BARRIER DIODE (30V/2.0A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (40V/0.6A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (60V/1A) SCHOTTKY BARRIER DIODE


    Original     		PDF 5V/10A) 500ns, schottky diode 60V 5A 30A high speed diode Schottky Diode 20V 5A Schottky diode high reverse voltage marking code 1A diode Schottky Diode 40V 2A Schottky Barrier 3A diode schottky code 10 SCHOTTKY BARRIER DIODE ERG81-004

    MA411

    Abstract: YG811S09R
    Text: 1. SCOPE This specification provides the ratings and the test requirement for FUJI SILICON DIODE YG811S09R 2. OUT VIEW • MARKING- MOLDING RESIN 1 Out view is shown (2) Marking is shown It is marked to type name or abbreviated type name, polarity and Lot Na


    OCR Scan     		PDF YG811S09R H04-004-07 MA411 YG811S09R

    Fuji Electric SM

    Abstract: No abstract text available
    Text: This malerlal and ih# Information herein Is the property o. Fuji Elee Inc Co.Lid. They shaft be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any ihlrd party, nor used for the manufacturing purposes without ihe express written consent of Fuji Electric Co. Ltd.


    OCR Scan     		PDF YG811S09R H04-004-07 YG811S09R Fuji Electric SM

    era-84

    Abstract: 104C smd ERE81-004
    Text: —K / Rectifier Diodes m -it i/yjil Schottky-Barrier Diodes SBD 1 in one-package 1 Ä Device type SMD i'tiSno Maximum rating Viww *1 If i a v ) ERA82-004 SC802-04 SC802-06 SC802-09 ERA83-004 ERA83-006 ERA81-004 ERA84-009 ERA85-009 ERB83-004 ERB83-006 ERB81-004


    OCR Scan     		PDF ERA82-004 SC802-04 SC802-06 SC802-09 ERA83-004 ERA83-006 ERA81-004 ERA84-009 ERA85-009 ERB83-004 era-84 104C smd ERE81-004

    6DI15S-050

    Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
    Text: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140


    OCR Scan     		PDF 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 1DI200Z-120 1DI200ZN-120 1DI200ZP-120 1DI300M-050 6DI15S-050 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050

    ET412

    Abstract: 2SK1217 2SK2850 ESAB92M-02N 2SK2879 2SK2765 2SK2645 2SK1916 2sk2645 MOSFET 2sk1082
    Text: / Discontinued Types 9. S! Descciptien / ' f ' 7 - MOSFET Power MOFET O w c o n t& n je d ty p e ItW B S W P Â R e p la c a d typ e 2SK1009 2SK1010 2SK1011 2SK1012 2SK1015 2SK2871 2SK2875 2SK2639 2SK2641 2SK2755 2SK1016 2SK1023 2SK1024 2SK1082 2SK2643 2SK2646


    OCR Scan     		PDF 2SB1532 2SC3821 2SC3822 2SC3865 2SC3886 2SC4383 2SC4507 2SC4508 2SD1726 2SD1740 ET412 2SK1217 2SK2850 ESAB92M-02N 2SK2879 2SK2765 2SK2645 2SK1916 2sk2645 MOSFET 2sk1082