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    YR YF TRANSISTOR Search Results

    YR YF TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    YR YF TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Vishay Telefunken Physical Explanations AQL Acceptable Quality Level see chapter “Quality Data” B, b Base, base terminal C, c Collector, collector terminal The transistor equivalent circuit (see chapter “Transistor Equivalent Circuit”) shows the different


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    HALL EFFECT 21E

    Abstract: thyristor aeg transistor SMD 12E transistor Common Base configuration TRANSISTOR SMD MARKING CODE 2s aeg thyristor NPN transistor bc 148 lg smd transistor diode marking code YF MARKING SMD TRANSISTOR GG
    Text: RF Transistors Data Book 1997 Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The part number of a semiconductor device consists of two letters followed by a serial number. For example: B Material


    Original     		PDF 26-Feb-97 HALL EFFECT 21E thyristor aeg transistor SMD 12E transistor Common Base configuration TRANSISTOR SMD MARKING CODE 2s aeg thyristor NPN transistor bc 148 lg smd transistor diode marking code YF MARKING SMD TRANSISTOR GG

    Common collector configuration basic

    Abstract: transistor Common emitter configuration NF50 yr yf transistor photo thyristor oscillator tunnel diode
    Text: Vishay Telefunken Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The part number of a semiconductor device consists of two letters followed by a serial number. B For example: Material F Function


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    diode tunnel

    Abstract: NF50 Common collector configuration basic rs gp germanium diode
    Text: Vishay Semiconductors Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The part number of a semiconductor device consists of two letters followed by a serial number. B For example: Material F Function


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    FET K161

    Abstract: S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR
    Text: Radio-Frequency Semiconductors Transistors, FETs, Cell Packs Semiconductor Company The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or


    Original     		PDF 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 S-AV26H FET K161 S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR

    cil pnp smd

    Abstract: smd transistor yf smd transistor fj npn smd transistor FY transistor smd JR VR313 transistor smd ztf 2SC4669 TE5S M55S
    Text: Power Transistor n PNP t #jf+j:&m OUTLINE DIMENSIONS Case 1 E-pack 2SAl795 I-,_ 1:; : i ; -1 “5y;.5. o ] 4 -4OV -5A I’ll1 st> le 1 : J-he 2 : 3 : blmlttc~r 4 : colltTtol ;@i!Z RATINGS Q$Az$j$ 4 Absolute Maximum Ratings rl =1 CiL rj11 < ;,a fC$ I+ iii-


    Original     		PDF 2SAl795 2sc4979 Zll/C79t; cil pnp smd smd transistor yf smd transistor fj npn smd transistor FY transistor smd JR VR313 transistor smd ztf 2SC4669 TE5S M55S

    2sc5088 horizontal transistors

    Abstract: S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509
    Text: High-Frequency Semiconductors Power Devices Semiconductor Company The information contained herein is subject to change without notice. 021023_D The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or


    Original     		PDF 3SK114 3SK126 S1255 2SC2644 2-AV24 3SK115 3SK291 S1256 2-AV26H 2sc5088 horizontal transistors S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509

    3SK73

    Abstract: S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112
    Text: 高周波用半導体デバイス パワーデバイス編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製


    Original     		PDF 050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 3SK73 S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112

    Untitled

    Abstract: No abstract text available
    Text: POWER RF MOSFET TRANSISTORS POLYFET RF DEVICES 1. Basic Considerations 1.1. Use a Printed Circuit Board - In most cases superior and more repeatable performance can be obtained using a printed circuit board with stripline inductors. It is also easier to maintain a good ground plane around the transistor.


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    BU43FVE

    Abstract: BU4338 BU4210
    Text: Datasheet Voltage Detector IC Series Low Voltage Free Delay Time Setting CMOS Voltage Detector IC Series BU42□□G series, BU42□□F series, BU42□□FVE series, BU43□□G series, BU43□□F series, BU43□□FVE series ●General Description ROHM CMOS reset IC series with adjustable output


    Original     		PDF BU42G BU42F BU42FVE BU43G BU43F BU43FVE TSZ2211115001 TSZ02201-0R7R0G300050-1-2 BU4338 BU4210

    Untitled

    Abstract: No abstract text available
    Text: TECHNICAL NOTE Voltage Detector IC Series Low Voltage Free Delay Time Setting CMOS Voltage Detector IC Series BU42□□G/F/FVE，BU43□□G/F/FVE Series ●General Description ROHM CMOS reset IC series with adjustable output delay is a high-accuracy low current consumption reset IC series with a


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    yr yf transistor

    Abstract: ITT Intermetall
    Text: Technical Information Index of Symbols b bf bi bo br B Bq C Ci Co CcBO C EBO Ciss Cr E f fr F Fc g 9f 9i 9m 9o 9r 9s GC GP Gpav Gp max Gy h hf hi h0 hr hFE Iß Ibm Ibi >B2 !c !c a v leso !c e o !c e r 6 Imaginary part of y-Parameters Imaginary part of forward


    OCR Scan     		PDF

    QS 100 NPN Transistor

    Abstract: KSC1393 transistor revers characteristic j001 samsung tv
    Text: SAMSUNG SEMICONDUCTOR INC KSC1393 14E J| GOOböflS fl | T ~ 3 /~ /J NPN EPITAXIAL SILICON TRANSISTOR TV VHF TUNER RF AMPLIFIER FORWARD AGC • High Current Gain Bandwidth Product fT=700MHz (iyp) • Low Noise Figure NF=3.0dB (Max) at f=200MHz • Low Reverse Transfer Capacitance Cre=0.5pF (Max)


    OCR Scan     		PDF 71t4m2 KSC1393 700MHz 200MHz f-200MHz Rj-500 200MHz QS 100 NPN Transistor transistor revers characteristic j001 samsung tv

    3sk73

    Abstract: SK192A 2SK241
    Text: 2. GAIN AND STABILITY F igure 2.1 show s the basic high-frequency am ­ p lification circu it o f a transistor/F E T and its equiva­ len t circuit. W hen this am plification circ u it is tuned to the c en ter frequency, the capacitance is rem oved and only the conductance rem ains as show n in the


    OCR Scan     		PDF 2SC380TM10 2SC3125 2SC3123 3sk73 SK192A 2SK241

    BF 234 transistor

    Abstract: transistor KSC2786 RF POWER TRANSISTOR 100MHz samsung tv
    Text: Inc SAMSUNG SEMICONDUCTOR KSC2786 i*e ° aoofibM q | ~ r - jj~ fy NPN EPITAXIAL SILICON TRANSISTOR a • r TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, MIXER, OSCILLATOR TO-92S • High Cumnt-CMIn-Bandwidth Product fT=600MHz iyp • High Power Gain Gp«=22dB at f=100MHz


    OCR Scan     		PDF KSC2786 600MHz -22dB 100MHz O-92S KSC2786 100MHz T-31-17 BF 234 transistor transistor RF POWER TRANSISTOR 100MHz samsung tv

    2SK163

    Abstract: nec 2sk163 2SK163 TO92 transistor 2sk163 2sk163 transistor 2sk163 nec transistor et 454 transistor S67 dh 0734 "2SK163"
    Text: NEC J u n c t io n F ie ld E ffe ct T r a n s is t o r 2SK163 N-Channel Silicon Junction Field Effect Transistor Audio Frequency Low Noise Amplifier PACKAGE DIMENSIONS t t f t / FEATURES U n i t : mm o e n= 1 . 3 n V / / H 7 M H ig h E , VpsxèSO V T Y P .


    OCR Scan     		PDF 2SK163 r-0988 2SK163 nec 2sk163 2SK163 TO92 transistor 2sk163 2sk163 transistor 2sk163 nec transistor et 454 transistor S67 dh 0734 "2SK163"

    KTC3193

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA KTC3193 EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. FEATURES • High Power Gain : Gpe=30dB Typ. (f=10.7MHz). • Recommended for FM IF, OSC Stage and AM CONV, IF Stage. MAXIMUM RATINGS (Ta=25°C)


    OCR Scan     		PDF KTC3193 T0-92M 455kHz KTC3193

    KTC3193

    Abstract: No abstract text available
    Text: SEMICONDUCTOR T E C H N IC A L D A T A KOREA ELECTRONICS CO.,LTD. KTC3193 EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. FEATURES • High Power Gain : Gpe=30dB Typ. (f=10.7MHz). • Recommended for FM IF, OSC Stage and AM CONY, IF Stage.


    OCR Scan     		PDF KTC3193 T0-92M 455kHz 455kHz KTC3193

    2SC1009A

    Abstract: CIL 108
    Text: SILICON TRANSISTOR ELECTRON DEVICE 2SC1009A F M /A M RF AMPLIFIER, MIXER, OSCILLATOR, CONVERTER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS in millimeters • High Gain Bandwidth Product: f j = 250 MHz TYP. 2.8 ± 0.2 • Low Output Capacitance: CQb = 1.8 pF TYP.


    OCR Scan     		PDF 2SC1009A J22686 TC-1486A 2SC1009A CIL 108

    transistor c 1923

    Abstract: 2SC1923-0 sc1923 2sc 1203 PF751 2SC1923R C1923 2SC1923O transistor A05 2SC19230/3772
    Text: ì / U D y N P N X t i9 * 5 / 7 > l, 7 ls - ? & h 7 y 5 J Z S ! , SILICON NPN EPITAXIAL PLANAR TRANSISTOR o FM R P , M I X , I P o FM T u n e r  2 SC 1923 iflfilffl and High F r eq u e n c y A m plifier Appli c a tio n s • ; Cr e = 0 i 7 0 p F Typ.)


    OCR Scan     		PDF a70pF SC-43 200MHz transistor c 1923 2SC1923-0 sc1923 2sc 1203 PF751 2SC1923R C1923 2SC1923O transistor A05 2SC19230/3772

    Untitled

    Abstract: No abstract text available
    Text: T em ic Semiconductors Symbols and Terminology AQL Acceptable Quality Level see chapter “Quality Data” B. b Base, base terminal C, c Collector, collector terminal Capacitances The transistor equivalent circuit (see chapter “Transistor Equivalent Circuit”) shows the different capacitances in


    OCR Scan     		PDF 13-Mar-97

    mem637

    Abstract: mem616 tetrode 3N159 MEM5640 MEM563C MEM617 GP 617 DIODE 3n187 MEM680
    Text: DUAL P-CHANNEL ENHANCEMENT MODE MOSFETS Part No. *M E M 550 *M E M 550C MEM 551 MEM 551C #*M E M 954 •M E M 9 5 4 A *M E M 954B # MEM 955 MEM 955A MEM 955B 2N 3609 2N 4066 2N 4067 3N 147 3N 148 *3N 151 *3N 165 *3N 166 *3N 188 *3N 189 3N 190 3N 191 MEM 517C2M


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    list of transistor

    Abstract: dual-gate sr 160 DIODE Equivalent list
    Text: [II] EXPLANATION OF HIGH-FREQUENCY CHARACTERISTICS 1. H IG H -FR E Q U E N C Y T R A N SIST O R PA R A M E T E R ex ten t of signals am plitude to be handled. E quivalent p a ra m eters o f a tra n sisto r in ­ E quivalent circu its have been developed


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    AM3526

    Abstract: 2-bit half adder AM312 AM290 AM2019 AM2001 002074
    Text: ADVANCED MICRO D E V I C E S 7b D E j 0ES7SHS OOSOTbM ADVANCED MICRO D E V ICES 5 | 76C ¿ 0 9 6 4 D “¿T -.4-2-11-13 I" Mask-Programmable Gate Array With ECL RAM PRELIMINARY DISTINCTIVE CHARACTERISTICS Up to 3718 equivalent gates - 416 Internal cells - Up to 135 l/O s


    OCR Scan     		PDF 1T-42-11-13 WF001164 00ECH7Ã T-42-11-13 AM3526 2-bit half adder AM312 AM290 AM2019 AM2001 002074