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Walsin Technology Corporation WLCW2520Z0J150PB RF Inductors - SMD Chip Wire Ind 2520(1008) 15000nH +/-5%
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Mouser Electronics	WLCW2520Z0J150PB					1 $0.13 10 $0.111 100 $0.079 1000 $0.054 10000 $0.046	Get Quote
Walsin Technology Corporation WLSN043DZ0M150LB Power Inductors - SMD Unshielded SMD Power Ind 043D 15uH +/-20%
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Mouser Electronics	WLSN043DZ0M150LB					1 $0.17 10 $0.15 100 $0.107 1000 $0.073 10000 $0.062	Get Quote
Walsin Technology Corporation WLSN032DZ0M150PB Power Inductors - SMD Unshielded SMD Power Ind 032D 15uH +/-20%
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Mouser Electronics	WLSN032DZ0M150PB					1 $0.2 10 $0.169 100 $0.121 1000 $0.083 10000 $0.07	Get Quote
Walsin Technology Corporation WLSN054DZ0M150LB Power Inductors - SMD Unshielded SMD Power Ind 054D 15uH +/-20%
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Mouser Electronics	WLSN054DZ0M150LB					1 $0.2 10 $0.169 100 $0.121 1000 $0.083 10000 $0.07	Get Quote
Walsin Technology Corporation WLFW2012Z0K150PB RF Inductors - SMD Ferrite Chip Wire Ind2012(0805) 15uH +/-10%
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Mouser Electronics	WLFW2012Z0K150PB					1 $0.26 10 $0.218 100 $0.155 1000 $0.106 10000 $0.09	Get Quote

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Z0 150 79 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
transmission lines Twisted Pair spice model Abstract: MMBD701 Twisted Pair split termination 100EP MBD301 MBD701 MC10EP16 MMBD301 diode z01 Text: AND8020/D Termination of ECL Devices with EF Emitter Follower OUTPUT Structure Prepared by: Paul Shockman ON Semiconductor Logic Applications Engineering http://onsemi.com APPLICATION NOTE CONTENTS OF APPLICATION NOTE Introduction − DC Termination Analysis	Original	PDF	AND8020/D transmission lines Twisted Pair spice model MMBD701 Twisted Pair split termination 100EP MBD301 MBD701 MC10EP16 MMBD301 diode z01
BFQ71 Abstract: Q62702-F775 bfq 96 Text: NPN Silicon RF Transistor BFQ 71 ● For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA. ● Hermetically sealed ceramic package. ● HiRel/Mil screening available. ● CECC-type available: CECC 50002/260.	Original	PDF	Q62702-F775 BFQ71 Q62702-F775 bfq 96
z0 150 81 Abstract: transistor s11 s12 s21 s22 Q62702-F774 bfq 85 Text: NPN Silicon RF Transistor BFQ 70 For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2 mA to 20 mA. ● Hermetically sealed ceramic package ● HiRel/Mil screening available. ● ESD: Electrostatic discharge sensitive device, observe handling precautions!	Original	PDF	Q62702-F774 z0 150 81 transistor s11 s12 s21 s22 Q62702-F774 bfq 85
Transistor BFR Abstract: Transistor BFR 39 Q62702-F1086 Transistor BFR 30 Transistor BFR 38 MARKING 93 BFR93A BFR93 Text: NPN Silicon RF Transistor BFR 93 A ● For low-distortion broadband amplifiers and oscillators up to 2 GHz at operating currents from 5 mA to 30 mA. ● CECC-type available: CECC 50002/256. ESD: Electrostatic discharge sensitive device, observe handling precautions!	Original	PDF	Q62702-F1086 OT-23 Transistor BFR Transistor BFR 39 Q62702-F1086 Transistor BFR 30 Transistor BFR 38 MARKING 93 BFR93A BFR93
BFQ72 Abstract: Q62702-F776 s parameters transistor ac 151 Text: NPN Silicon RF Transistor BFQ 72 ● For low-distortion broadband amplifiers up to 2 GHz at collector currents from 10 mA to 30 mA. ● Hermetically sealed ceramic package. ● HiRel/Mil screening available. ● CECC-type available: CECC 50002/263. ESD: Electrostatic discharge sensitive device, observe handling precautions!	Original	PDF	Q62702-F776 BFQ72 Q62702-F776 s parameters transistor ac 151
ac 0624 transistor 17-33 Abstract: transistor bfp 196 Q62702-F1282 0676 marking BFP193RCs 0166 415 04 1 060 Text: NPN Silicon RF Transistor BFP 193 ● For low-noise, high-gain amplifiers up to 2 GHz. ● For linear broadband amplifiers. ● Power amplifier for DECT and PCN systems ● fT = 8 GHz F = 1.2 dB at 800 MHz ESD: Electrostatic discharge sensitive device, observe handling precautions!	Original	PDF	Q62702-F1282 OT-143 ac 0624 transistor 17-33 transistor bfp 196 Q62702-F1282 0676 marking BFP193RCs 0166 415 04 1 060
Transistor BFR 93 Abstract: Transistor BFR 30 BFR 30 transistor Transistor BFR 39 BFR93 Transistor BFR 135 bfr 49 transistor Transistor BFR Transistor BFR 80 Transistor BFR 35 Text: NPN Silicon RF Transistor BFR 93 A ● For low-distortion broadband amplifiers and oscillators up to 2 GHz at operating currents from 5 mA to 30 mA. ● CECC-type available: CECC 50002/256. ESD: Electrostatic discharge sensitive device, observe handling precautions!	Original	PDF	Q62702-F1086 OT-23 Transistor BFR 93 Transistor BFR 30 BFR 30 transistor Transistor BFR 39 BFR93 Transistor BFR 135 bfr 49 transistor Transistor BFR Transistor BFR 80 Transistor BFR 35
Q62702-F788 Abstract: No abstract text available Text: NPN Silicon RF Transistor BFQ 74 ● For low-noise amplifiers in the GHz range, and broadband analog and digital applications in telecommunications systems at collector currents from 1 mA to 25 mA. ● Hermetically sealed ceramic package. ● HiRel/Mil screening available.	Original	PDF	Q62702-F788 Q62702-F788
KGF1191 Abstract: No abstract text available Text: This version: Jul. 1998 Previous version: Jan. 1998 E2Q0016-38-71 ¡ electronic components KGF1191 ¡ electronic components KGF1191 Small-Signal Amplifier GENERAL DESCRIPTION The KGF1191 is a two-stage small-signal amplifier, with frequencies ranging from the UHF-band	Original	PDF	E2Q0016-38-71 KGF1191 KGF1191
FAR-G5EE-942M50-Y2FD Abstract: No abstract text available Text: FUJITSU MEDIA DEVICES LIMITED Customer Name Standard Specification System EGSM/GSM850-Rx 50/150ohm DATE FMD Part Number FAR-G5EE-942M50-Y2FD Version 1.1db Sep. 22, 2003 Electrical Specification(Filter 1) Passband : 925 ~ 960 MHz Condition Item Specification	Original	PDF	EGSM/GSM850-Rx 50/150ohm) FAR-G5EE-942M50-Y2FD FAR-G5EE-942M50-Y2FD
C214P Abstract: KGF1191 CB 0925 C107P cc 3061 Text: J2Q0016-38-71 作成：1998年 7月 ¡ 電子部品 KGF1191 l 前回作成：1998年 1月 KGF1191 小信号アンプ n 概要 KGF1191は低電圧、低電流動作、高利得、高アイソレーションを特長とするUHF帯からL帯用の小信号2段アンプです。	Original	PDF	J2Q0016-38-71 KGF1191 KGF1191 KGF1191UHFL 3V850MHz -35dBm Z075W, C214P CB 0925 C107P cc 3061
VGD15 Abstract: KGF1254B KGF1254 cs100pf 12438 1254B 1254 ms 16881 Text: J2Q0023-38-71 作成：1998年 7月 KGF1254B/1254 l 前回作成：1998年 1月 ¡ 電子部品 KGF1254B/1254 中電力アンプ n 概要 KGF1254Bは高出力電力、低雑音、低電流動作を特長とするUHF帯からL帯用の中電力アンプで	Original	PDF	J2Q0023-38-71 KGF1254B/1254 KGF1254B/1254 KGF1254BUHFL 2V850MHz KGF1254KGF1254BS KGF1254B 20dBm KGF1254 VGD15 KGF1254B KGF1254 cs100pf 12438 1254B 1254 ms 16881
1254 Abstract: KGF1254 KGF1254B Text: This version: Jul. 1998 Previous version: Jan. 1998 E2Q0023-38-71 ¡ electronic components KGF1254B/1254 ¡ electronic components KGF1254B/1254 Medium-Power Amplifier GENERAL DESCRIPTION The KGF1254B is a medium-power amplifier, with frequencies ranging from the UHF-band to	Original	PDF	E2Q0023-38-71 KGF1254B/1254 KGF1254B KGF1254 1254
KGF1254 Abstract: KGF1254B 1254B Text: ¡ electronic components KGF1254B/1254 ¡ electronic components KGF1254B/1254 Medium-Power Amplifier for UHF-Band and PCS Frequencies GENERAL DESCRIPTION The KGF1254B is a medium-power amplifier, with frequencies ranging from the UHF-band to the L band, that features high output power, low noise, and low current dissipation. The	Original	PDF	KGF1254B/1254 KGF1254B KGF1254 1254B 1254B

Untitled Abstract: No abstract text available Text: CONFIDENTIAL FUJITSU MEDIA DEVICES LIMITED Customer Name Standard Specification System EGSM/GSM850-Rx 50/150ohm DATE Sep. 22, 2003 FMD Part Number FAR-G5EE-942M50-Y2FD Version 1.1db Preliminary Electrical Specification(Filter 1) Passband : 925 ~ 960 MHz Condition	Original	PDF	EGSM/GSM850-Rx 50/150ohm) FAR-G5EE-942M50-Y2FD S21/S31\| S21-S31)
421-6 MAG Abstract: KGF1284 7589 rfc60 Text: J2Q0027-38-72 作成：1998年 7月 KGF1284 l 前回作成：1998年 1月 ¡ 電子部品 KGF1284 パワーFET（プラスチックタイプ） n 概要 KGF1284は高効率、高出力電力、高利得を特長とする、SC-62型プラスチックパッケージに実装	Original	PDF	J2Q0027-38-72 KGF1284 KGF1284 KGF1284SC-62 12dBat 3PMMPSC-62 TaTc25 421-6 MAG 7589 rfc60
Untitled Abstract: No abstract text available Text: NB3N106K 3.3V Differential 1:6 Fanout Clock Driver with HCSL Outputs Description The NB3N106K is a differential 1:6 Clock fanout buffer with High−speed Current Steering Logic HCSL outputs optimized for ultra low propagation delay variation. The NB3N106K is designed	Original	PDF	NB3N106K NB3N106K/D
SIT9002A Abstract: SIT9002 Text: SiT9102 LVPECL / HCSL / LVDS / CML 1 to 220 MHz High Performance Oscillator Features Benefits • Extremely low RMS phase jitter random • <1 ps (typical) • Wide frequency range • 1 MHz to 220 MHz • 220 MHz to 800 MHz refer to SiT9107 • High frequency stability	Original	PDF	SiT9102 SiT9107 SiT9002 SIT9002AC-132N33DB160 SiT9002AC-133N33DB160 SIT9102AC-233N33E75 00000X SIT9102AC283N33E150 SiT9102AI-183N33E106 SIT9002A
Untitled Abstract: No abstract text available Text: NB4N111K 3.3V Differential In 1:10 Differential Fanout Clock Driver with HCSL Level Output http://onsemi.com Description The NB4N111K is a differential input clock 1 to 10 HCSL fanout buffer, optimized for ultra low propagation delay variation. The NB4N111K is designed with HCSL clock distribution for FBDIMM	Original	PDF	NB4N111K NB4N111K/D
NB4N111KMNG Abstract: NB4N111KMNR4G QFN32 488AM Text: NB4N111K 3.3V Differential In 1:10 Differential Fanout Clock Driver with HCSL Level Output http://onsemi.com Description The NB4N111K is a differential input clock 1 to 10 HCSL fanout buffer, optimized for ultra low propagation delay variation. The NB4N111K is designed with HCSL clock distribution for FBDIMM	Original	PDF	NB4N111K NB4N111K NB4N111K/D NB4N111KMNG NB4N111KMNR4G QFN32 488AM
QFN-24 Abstract: QFN24 4*4 qfn24 socket Text: NB3N106K 3.3V Differential 1:6 Fanout Clock and Data Driver with HCSL Outputs Description http://onsemi.com The NB3N106K is a differential 1:6 Clock and Data fanout buffer with High−speed Current Steering Logic HCSL outputs optimized for ultra low propagation delay variation. The NB3N106K is designed	Original	PDF	NB3N106K NB3N106K/D QFN-24 QFN24 4*4 qfn24 socket
ferroxcube 56-590-65 Abstract: MRF8372 equivalent macro-X ceramic Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Pow er Transistor MRF837 MRF8372, R1, R2 Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. • Specified @ 12.5 V, 870 MHz Characteristics	OCR Scan	PDF	MRF8372 2-J16 MRF837 MRF8372, ferroxcube 56-590-65 MRF8372 equivalent macro-X ceramic
ECC-D3D Abstract: eccd3A panasonic cap 4.7 ECCD3 Text: Panasonic Ceramic Disc Capacitors High Voltage High Voltage Ceramic Disc Capacitors, Rated 1 to 3 kVDC, Temp. Char. SL/GP • Features • W ide o pe ra ting te m p e ra tu re range: - 2 5 to 105 'C • Low loss at w ide frequency range and stable against	OCR Scan	PDF
BFT65 Abstract: D1279 Siemens 1414 D1275 germanium Germanium drift transistor diode a811 Siemens Halbleiter germanium transistor legiert Text: Table of Contents Selection Guide Ordering Codes Inhaltsverzeichnis Typeniibersicht Bestellnummern Scope of Applications Technical Information Quality Specifications Einsatzhinweise Technische Angaben Qualitatsangaben Package Outlines Mounting Instructions	OCR Scan	PDF

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Z0 150 79 Search Results

Z0 150 79 Price and Stock

Walsin Technology Corporation WLCW2520Z0J150PB

Walsin Technology Corporation WLSN043DZ0M150LB

Walsin Technology Corporation WLSN032DZ0M150PB

Walsin Technology Corporation WLSN054DZ0M150LB

Walsin Technology Corporation WLFW2012Z0K150PB

Z0 150 79 Datasheets Context Search

transmission lines Twisted Pair spice model

BFQ71

z0 150 81

Transistor BFR

BFQ72

ac 0624 transistor 17-33

Transistor BFR 93

Q62702-F788

KGF1191

FAR-G5EE-942M50-Y2FD

C214P

VGD15

1254

KGF1254

Untitled

421-6 MAG

Untitled

SIT9002A

Untitled

NB4N111KMNG

QFN-24

ferroxcube 56-590-65

ECC-D3D

BFT65