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    Diodes Incorporated ZC835ATC

    DIODE VAR CAPACITANCE SOT23-3
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    DigiKey ZC835ATC Reel 10,000
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    Diodes Incorporated ZC835ATA

    DIODE VAR CAP 68PF 25V SOT23-3
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    ZC835A Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ZC835A Zetex Semiconductors SOT23 SILICON VARIABLE CAPACITANCE DIODE Original PDF
    ZC835A Zetex Semiconductors SILICON 28V HYPERABRUPT VARACTOR DIODES Original PDF
    ZC835A Zetex Semiconductors DIODE VAR CAP SINGLE 25V 61.2PF 3SOT23 Original PDF
    ZC835A Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
    ZC835A Ferranti Semiconductors SOT-23 Transistors & Diodes 1983 Scan PDF
    ZC835ATA Zetex Semiconductors DIODE VAR CAP SINGLE 25V 61.2PF 3SOT-23 T/R Original PDF
    ZC835ATA Zetex Semiconductors 28 V, silicon hyperabrupt varactor diode Original PDF
    ZC835ATA Zetex Semiconductors Variable Capacitance Diodes (Varicaps, Varactors), Discrete Semiconductor Products, DIODE VAR CAP 68PF 25V SOT23-3 Original PDF
    ZC835ATC Zetex Semiconductors DIODE VAR CAP SINGLE 25V 61.2PF 3SOT-23 T/R Original PDF
    ZC835ATC Zetex Semiconductors Variable Capacitance Diodes (Varicaps, Varactors), Discrete Semiconductor Products, DIODE VAR CAPACITANCE SOT23-3 Original PDF

    ZC835A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3819 spice model

    Abstract: construction of varactor diode bfr90 equivalent ZMV830B 2N3819 S T A 933 ZMV836B ZC829A transistor 2N3819 2N3819 equivalent
    Text: Applications Note 9 Issue 4 July 2002 Zetex Variable Capacitance Diodes Neil Chadderton Introduction The advent of varactor diodes has made a huge impact in many areas of electronic design, which is only too evident in todays consumer products. Formerly, where bulky or unreliable


    Original     		PDF ZC934A OD523 OT323 ZV950V2 ZMDC950 ZV951V2 ZMDC951 ZV952V2 ZMDC952 ZV953V2 2N3819 spice model construction of varactor diode bfr90 equivalent ZMV830B 2N3819 S T A 933 ZMV836B ZC829A transistor 2N3819 2N3819 equivalent

    smd code book

    Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
    Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ


    Original     		PDF OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes

    Diodes REPLACEMENT

    Abstract: DMG3420U zmv934ta
    Text: DATE: 16th August, 2010 PCN #: 2022 PCN Title: Device End of Life Dear Customer: This is an announcement of change s to products that are currently being offered by Diodes Incorporated.


    Original     		PDF ZC834ATC ZMV830ATA ZMV934TA BZP64-27 TLC363C20V8-7-F ZC834BTC ZMV830ATC ZV831BV2TA BZP64-33 TLC363C5V5-7-F Diodes REPLACEMENT DMG3420U zmv934ta

    j4a diode

    Abstract: No abstract text available
    Text: SOT23 SILICON VARIABLE CAPACITANCE DIODE ZC829A ISSUE 3 – JANUARY 1998 FEATURES * VHF to UHF operation * Low IR * Enabling Excellent Phase Noise Performance * IR Typically <200pA at 25V APPLICATIONS * Mobile radios and Pagers * Cellular telephones * Voltage controlled Crystal Oscillators


    Original     		PDF 200pA ZC829A ZC829A ZC830A ZC831A ZC832A ZC833A ZC834A ZC835A j4a diode

    MMBD2104

    Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
    Text: The Surface Mount Device Code Book R P Blackwell G4PMK A marsport publication! Introduction SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a


    Original     		PDF BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 LL914 LL4150, MMBD2104 Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932

    MMBD2103

    Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N
    Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.


    Original     		PDF BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 MMBD2103 ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N

    SMD Codes

    Abstract: TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101
    Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.


    Original     		PDF BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 SMD Codes TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101

    transistor SMD s72

    Abstract: nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p
    Text: ВВЕДЕНИЕ Впервые, сделана столь масштабная попытка, разобраться с маркировкой компонентов поверхностного монтажа SMD . Конечно, книга не является панацеей, но на взгляд авторов должна существенно помочь в той


    Original     		PDF OT323 BC818W MUN5131T1. BC846A SMBT3904, MVN5131T1 SMBT3904 OT323 transistor SMD s72 nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p

    ON code 829B

    Abstract: sot23 mark code CB 829B 832B ZMDC830 ZMV835BTA sot23 mark code AE marking j3a marking j5a ZV931
    Text: 830 SERIES SILICON 25V HYPERABRUPT VARACTOR DIODES ZC829, ZDC833, ZMV829, ZMDC830, ZV831 Series Device description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low


    Original     		PDF ZC829, ZDC833, ZMV829, ZMDC830, ZV831 OT323 OD523 OD323 200pA) ON code 829B sot23 mark code CB 829B 832B ZMDC830 ZMV835BTA sot23 mark code AE marking j3a marking j5a ZV931

    ON Semiconductor 831B

    Abstract: sot23 mark code CB MARK BE diode SOD523 ZC829ATA ZV931 829b 832a AA SOD323 design ideas mark A1 SOT23
    Text: 830 series Silicon 25V hyperabrupt varactor diodes ZC829, ZDC833, ZMV829, ZMDC830 and ZV831 Description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low reverse current ensures very low phase


    Original     		PDF ZC829, ZDC833, ZMV829, ZMDC830 ZV831 OT323 OD523 OD323 200pA) D-81541 ON Semiconductor 831B sot23 mark code CB MARK BE diode SOD523 ZC829ATA ZV931 829b 832a AA SOD323 design ideas mark A1 SOT23

    ZV930

    Abstract: 831B 829B sot23 mark code AE sot23 mark code CB marking j5a ZMDC830 ON code 829B ZC930 ZV931
    Text: 830 SERIES SILICON 28V HYPERABRUPT VARACTOR DIODES ZC829, ZDC833, ZMV829, ZMDC830, ZV831 Series Device Description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low


    Original     		PDF ZC829, ZDC833, ZMV829, ZMDC830, ZV831 OT323 OD523 OD323 200pA) ZV930 831B 829B sot23 mark code AE sot23 mark code CB marking j5a ZMDC830 ON code 829B ZC930 ZV931

    j4a diode

    Abstract: ZC830B ZC830 ZC830A ZC831A ZC832A ZC833A ZC834A ZC835A ZC836A
    Text: ZC830/A/B to ZC836/A/B SOT23 SILICON VARIABLE CAPACITANCE DIODES ISSUE 5 – JANUARY 1998 1 FEATURES * Close Tolerance C-V Characteristics * High Tuning Ratio * Low IR Enabling Excellent Phase Noise Performance IR Typically <200pA at 25V 2 1 3 3 SOT23 ABSOLUTE MAXIMUM RATINGS.


    Original     		PDF ZC830/A/B ZC836/A/B 200pA ZC830) ZC830B) ZC830 ZC830A ZC830B j4a diode ZC830B ZC830 ZC830A ZC831A ZC832A ZC833A ZC834A ZC835A ZC836A

    FMMV105G

    Abstract: fmmv2109 ZC2800 ZC2811 ZC5800 ZC820 ZC821 ZC822 ZC823 ZC824
    Text: E-LINE DIODE SPECIFICATIONS SCH O TTK Y BARRIER DIO DES These devices have a high breakdown voltage and ultra fast switching capabilities. R.F. applications include low noise mixers, large and small signal detectors, limiters and discriminators. Applications


    OCR Scan     		PDF 10/iA ZC2800 ZC2811 ZC5800 ZC2800-ZC5800 ZC2811 OT-23 ZC2800E rZC2810E ZC2811E FMMV105G fmmv2109 ZC820 ZC821 ZC822 ZC823 ZC824

    BAV70-A4

    Abstract: Diode Marking z3 SOT-23 diode marking w8 BAV70A marking Z6 SOT-23 Capacitance BAS 20 SOT23 SOT23 DIODE marking CODE AV Z6 DIODE BAS16 BAV70
    Text: FERRANTI 4 semiconductors BAV70 H ig h S peed S w itc h in g D io d e Pair C o m m o n C a th o d e DESCRIPTION These devices are intended fo r high speed switching applications. Encapsulated in th e popular SOT-23 package these devices are designed specifically fo r use in thin and thick film


    OCR Scan     		PDF BAV70 OT-23 BAV70 C9/C20 50MHz ZC830A ZC831A ZC832A BAV70-A4 Diode Marking z3 SOT-23 diode marking w8 BAV70A marking Z6 SOT-23 Capacitance BAS 20 SOT23 SOT23 DIODE marking CODE AV Z6 DIODE BAS16

    ZC800

    Abstract: ZC801 ZC802 ZC803 ZC804 ZC820 ZC821 ZC822 ZC823 ZC82
    Text: HYPERABRUPT VARIABLE CAPACITANCE TUNER DIODES TABLE 6a - ZC800 ZC820 SERIES FOR PCB MOUNTING. CHARACTERISTICS at 25°C ambient temperature . Nominal Capacitance in pF V „ = 2 V , f = 1 M Hz Type Glass DO-7 Plastic E-line Min. Nom. Max. Minimum Q a tV „ = 3 V


    OCR Scan     		PDF ZC800 ZC820 50MHz C2/C20, ZC801 ZC821 ZC802 ZC822 ZC803 ZC804 ZC823 ZC82

    ZC800

    Abstract: ZC801 ZC802 ZC803 ZC804 ZC820 ZC821 ZC822 ZC823 .564 SOT23
    Text: HYPERABRUPT VARIABLE CAPACITANCE TUNER DIODES TABLE 6a - ZC800 ZC820 SER IES FOR PCB MOUNTING. C H A R A C T E R IS T IC S at 2 5 °C ambient temperature . Nominal Capacitance in pF V „ = 2 V , f = 1 M Hz Type Glass DO-7 Plastic E-line Min. Nom. Max. Minimum Q


    OCR Scan     		PDF ZC800 ZC820 50MHz C2/C20, ZC801 ZC821 ZC802 ZC822 ZC803 ZC804 ZC823 .564 SOT23

    Diode Marking z3 SOT-23

    Abstract: schottky diode marking A7 Y1 SOT-23 marking code X5 SOT23 SOT-23 MARKING w5 X2 marking code sot 23 MARKING X4 SOT23 marking C20 sot-23 sot marking code w7 Z4 SOT23
    Text: SCHOTTKY BARRIER DIODES TABLE 7 - SILICON PLANAR EPITAXIAL SCH O TTKY BARRIER DIODES The construction of these epitaxial, planar, passivated diodes utilises a Schottky barrier resulting in devices which have a high breakdown voltage and ultra fast switching capabilities.


    OCR Scan     		PDF OT-23 to-92 sot-23 BZX84 FMMD3102 BZX84-C3V0 BZX84-C3V3 BZX84-C3V6 BZX84-C3V9 ZC830 Diode Marking z3 SOT-23 schottky diode marking A7 Y1 SOT-23 marking code X5 SOT23 SOT-23 MARKING w5 X2 marking code sot 23 MARKING X4 SOT23 marking C20 sot-23 sot marking code w7 Z4 SOT23

    FMMD6050

    Abstract: FMMD914 BAW* diode BAL99 BAR99 BAV70 BAV74 BAV99 ZC830A ZC831A
    Text: SOT 23 TRANSISTORS & DIODES SELECTIO N GUIDE SILICO N P LA N A R HIGH SP EED SW ITCH IN G D IO D ES Rat ings Description Type B A S 16 FMMD914 HD3A BA L99 BA R99 FMMD6050 BAV70 BAV74 HD2A BAV99 BA W S6 HD4A Single diode Single diode Single diode Single diode


    OCR Scan     		PDF FMMD914 BAL99 BAR99 FMMD6050 BAV70 BAV74 BAV99 C9/C20 50MHz ZC830A BAW* diode ZC831A

    ZC2800E

    Abstract: BAS70-05 BAS70-06 ZC2810E ZC2811E ZC5800E ZC830A ZC831A ZC832A ZC833A
    Text: SOT-23 TRANSISTORS & DIODES SCH O TTKY BARRIER DIO DES Type V br at Ir -1 0 j A min. (Volts VF at lF-1mA max. (mV) 70 20 15 50 410 410 410 410 ZC2800E ‘ ZC2810E ZC2811E ZC5800E max. nA at VR (volts) 200 100 100 200 lF at VF-1V min. (mA) CratvR-0V f—1MHz


    OCR Scan     		PDF OT-23 ZC2800E ZC2810E ZC2811E ZC5800E ZC2810E) Ir-10mA BAS70-05 BAS70-06 ZC2800-ZC5800 ZC830A ZC831A ZC832A ZC833A

    zc825

    Abstract: BAS70-05 BAS70-06 ZC2800E ZC2810E ZC2811E ZC5800E ZC830A ZC831A ZC832A
    Text: SOT-23 TRANSISTORS & DIODES SCHOTTKY BARRIER DIODES Type V br at Ir -1 0 j A min. (Volts VF at lF-1mA max. (mV) 70 20 15 50 410 410 410 410 ZC2800E ‘ ZC2810E ZC2811E ZC5800E max. nA at VR (volts) 200 100 100 200 lF at VF-1V min. (mA) CratvR-0V f—1MHz


    OCR Scan     		PDF OT-23 ZC2800E ZC2810E ZC2811E ZC5800E ZC2810E) Ir-10mA BAS70-05 BAS70-06 capac832A zc825 ZC830A ZC831A ZC832A

    ZC830B

    Abstract: zc840 ZC830 ZC830A ZC831A ZC832A ZC833A ZC834A ZC835A ZC836A
    Text: SOT23 #• HYPERABRUPT TUNER DIODES Pinout : 1-Cathode, 3-Anode N om inal Capacitance at V r = 2 V , f=1MHz Reverse Breakdown Voltage Type Capacitance Ratio at f=1MHz C2/C2o Ctot Q at V r =3V f=50MHz Device Code VR V M in Typ pF Max pF Min Max Typ pF 25 9.0


    OCR Scan     		PDF c2/c20 50MHz ZC830A ZC831A ZC832A ZC833A ZC834A ZC835A ZC836A ZC830) ZC830B zc840 ZC830

    Untitled

    Abstract: No abstract text available
    Text: ZC830/A/B SOT23 SILICON VARIABLE CAPACITANCE DIODES to ZC836/A/B r ISSUE 5 - JANUARY 1998 FE A T U R E S * Close Tolerance C-V Characteristics * High Tuning Ratio * Low lR Enabling Excellent Phase Noise Performance lR Typ ically <200pA at 25V 1 * 3 1 SOT23


    OCR Scan     		PDF 200pA ZC830/A/B ZC836/A/B brZC830A ZC831A ZC832A ZC833A ZC834A ZC835A ZC836A

    diode G21

    Abstract: marking G21 Z5 LD4RA BZX84-C27 BZX84C18 g21 Transistor BZX84C3V0 BZX84 BAV74 BAV99
    Text: SOT 23 DIODES SILICON PLANAR HIGH SPEED SWITCHING DIODES Ratings and Characteristics at 25°C ambient temperature Max. Type FM MD914 HD3A BAV70 BAV74 HD2A BAV99 BAW 56 HD4A * lF = 100m A D escription Single diode Single diode Dual diode w ith Dual diode w ith


    OCR Scan     		PDF FMMD914 BAV70 BAV74 BAV99 BAW56 100mA diode G21 marking G21 Z5 LD4RA BZX84-C27 BZX84C18 g21 Transistor BZX84C3V0 BZX84

    zc826 IC

    Abstract: No abstract text available
    Text: PLESSEY S E M I C O N D / D I S C R E T E T S 7 2 20 5 33 PLESSEY dF | ? 2E0SB3 95D 0 4 9 8 4 S E M I C O N D / D I S C RE TE fl D i TABLE 4 : VARIABLE CAPACITANCE TUNER DIODES HYPEBABRUPTTYPEI ! i T-oi-n Hyperabrupt tuning diodes may be used in any electronic tuning system to replace conventional tuning


    OCR Scan     		PDF ZC800, ZC820 ZC830A ZC800 perature-ZC800 ZC830 zc826 IC