15 pin dot matrix printer head
Abstract: FXT605 15 pin ic for high power stepper motor Driver led matrix circuits mosfet application solenoid driver motor and printer DIODE TRANSISTOR LOGIC DEVICES hFE is transistor to220 ic led matrix Solenoid Driver Darlington
Text: Application Note 6 Issue 2 November 1995 The Use of Zetex E-Line Transistors in Motor and Solenoid Functions within Printers Effective Logic to High Current Load Interfacing Neil Chadderton Introduction The majority of modern printers use stepper motors and solenoids for driving
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outline100
500mA
15 pin dot matrix printer head
FXT605
15 pin ic for high power stepper motor Driver
led matrix circuits
mosfet application solenoid driver
motor and printer
DIODE TRANSISTOR LOGIC DEVICES
hFE is transistor to220
ic led matrix
Solenoid Driver Darlington
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Untitled
Abstract: No abstract text available
Text: ZETEX SEMICONDUCTORS P-channel enhancement mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance • Low current drive • Ease of paralleling
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300/xs.
F-200
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Untitled
Abstract: No abstract text available
Text: bOE D • ^^70570 000712^ 551 « Z E T B ZETEX SEMICONDUCTORS P-channel enhancement mode vertical DMOS FET ZVP2120 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance
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ZVP2120
F-231
F-232
F-233
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ZVP2110
Abstract: ZVP2110A ZVP2110B ZVP2110C ZVP2110E ta f220 ZVP211 F219
Text: bOE J> • cic 7D57fl 0007^51 5b0 M ZETB ZETEX SEMICONDUCTORS P-channel enhancement mode vertical DMOS FET ZVP2110 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance
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ZVP2110
ZVP2110A*
-100V
ZVP2110B*
ZVP2110C
F-225
CH70576
ZVP2110
ZVP2110A
ZVP2110B
ZVP2110E
ta f220
ZVP211
F219
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5b4 sot23-6
Abstract: No abstract text available
Text: bOE ]> • ^70578 0007^37 bEfl ZETEX SEMICONDUCTORS P-channel enhancement mode vertical DMOS FET ZVP3306 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance • Low current drive
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ZVP3306
F-237
7G57a
F-239
ZVP3306
F-240
H7D57fl
5b4 sot23-6
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ZVN4206E
Abstract: ZVN4206 zvn4206a ZVN4206C
Text: bGE D • Ti7057ä G0D7ß77 323 « Z E T B N-channel enhancement mode vertical DMOS FET ZVN4206 ZETEX SEMICONDUCTORS FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance
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ZVN4206
ZVN4206A
ZVN4206C
ZVN420
9/zvN4206
F-181
ZVN4206
11/zvn4206
F-182
ZVN4206E
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Untitled
Abstract: No abstract text available
Text: bGE D • WUST* DD07Ô3S *17 4 ZETEX SEMICONDUCTORS N-channel enhancement mode vertical DMOS FET ZVN2120 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance • Low current drive
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ZVN2120
F-134
F-135
F-136
F-137
c17Q57Ã
F-138
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Untitled
Abstract: No abstract text available
Text: bDE D • T c]7G57fl 0d07flQcl ZETEX N-channel enhancement mode vertical DMOS FET SEMICONDUCTORS ZV N 05 45 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance •
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7G57fl
0d07flQc
ZVN054nt
F-108
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Untitled
Abstract: No abstract text available
Text: b OE D • ^70576 ZETEX Ü0D7BG7 TGT SEMICONDUCTORS N-channel enhancementmode vertical DMOS FET ZVN 0540 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent tem perature stability • High input impedance • Low current drive
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F-106
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Untitled
Abstract: No abstract text available
Text: bOE D • ^ 7 0 3 7 0 GDG7TG3 245 Wt ZETB ZETEX SEMICONDUCTORS P-channel enhancement mode vertical DMOS FET ZVP0545 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance
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ZVP0545
F-202
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t5d diode
Abstract: T5D SOT23 zetex zvn2206 package details
Text: ZETEX SEMICOND UCTORS TSD ^70570 D □DQSbb'i 3 • ZETB 95D 0 5 6 6 9 N-channel enhancement mode vertical DMOS FET ZVN2206 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance
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ZVN2206
2206B
ZVN2206L
O-220
t5d diode
T5D SOT23
zetex zvn2206 package details
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IRF621
Abstract: IRF620
Text: ZETEX SEMICONDUCTORS *JS]> D •=1=170570 OOOSSbS 3 ■ 95D 0 5 5 6 5 3 ^* 7/ IRF620 IRF621 IRF622 IRF623 N-channel enhancement mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability
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IRF620
IRF621
IRF622
IRF623
O-220
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ZVN0545
Abstract: ZVN0545A
Text: ZETEX SEMICONDUCTORS TSD » T17GS7Û 0DGSL.35 Ô • ZETB 95D 0 5 6 3 5 N-channel enhancement mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance
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T17GS7Û
ZVN0545A*
ZVN0545B
ZVN0545L
O-220
ZVN0545
ZVN0545A
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IRF530
Abstract: IRF532 irf531 IRF533 1RF533 t5d 58 reliability irf530 irf-530
Text: ZETEX S EMI CONDUCT ORS W D T=] 70S7f i DDDSSSb 1 95D 0 5 5 5 6 IRF530 IRF531 IRF532 IRF533 N-channel enhancement mode vertical DMOS PET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability
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70S7f
IRF530
IRF531
IRF532
IRF533
O-220
IRF533
1RF533
t5d 58
reliability irf530
irf-530
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Siemens F75-54
Abstract: No abstract text available
Text: b OE D • ^70576 N-channel enhancement mode vertical DMOS FET ZETEX 0007775 fc.7T ■ Z E T B ' SEMICONDUCTORS ZVN 0117TA FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent tem perature stability • High input impedance
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0117TA
ZVIVI0117TA
ZVN0117TA
Siemens F75-54
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FERRANTI ZS
Abstract: G-260 ZVP0535 ZVP0535L ZVP0S35A ZVP0S35B p0535
Text: ZETEX SEMICONDUCTORS ^S]> D ^70570 ‘ 0GDS7S7 G • Z E T B 95D 05757 T'31'IS P-channel enhancement mode vertical DMOS FET ZVP0535 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance
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DG05757
ZVP0535
ZVP0S35A
-350V
ZVP0S35B
O-220
FERRANTI ZS
G-260
ZVP0535
ZVP0535L
p0535
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ZVN3310
Abstract: ZVN3310A ZVN3310B ZVN3310F F159
Text: büE D • T ti?GS7a QODVÔST 3DÔ ■ ZETB — ZETEX SEMICONDUCTORS N-channel enhancement mode vertical DMOS FET ZVN 3310 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent tem perature stability • High input impedance
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0D70ST
ZVN3310
ZVN3310A
ZVN3310B
ZVN3310F
F-162
0007fibS
F-163
ZVN3310
F159
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Ferranti Semiconductors
Abstract: No abstract text available
Text: ZETEX SEMICONDUCTORS ^5D T •= 70S 7 fi 0GDS703 T • ZETB D 95D 0 5 7 0 3 T-39-H N-channel enhancement mode vertical DMOS FET ZVN3206 FEATURES • Com pact geometry • Fast switching speeds • N o secondary breakdown • Excellent temperature stability
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0GDS703
T-39-H
ZVN3206
ZVN3206L*
Ferranti Semiconductors
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IRFZ30
Abstract: IRFZ32
Text: ZETEX ^5» SEMICONDUCTORS n ? DS7Ö 0005544 5 • ZETB D 95D 0 5 5 4 4 -V '3 1 N-channel enhancement mode vertical DMOS FET * IRFZ30 IRFZ32 ADVANCED INFORMATION FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent tem perature stability
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IRFZ30
IRFZ32
IRFZ32
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Untitled
Abstract: No abstract text available
Text: Ti7DS7fl GGa?ÔÔS 4TT bOE D ZETEX S E M I C O N D U C T O R S P-channel enhancement mode vertical DMOS FET ZVP0120 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance
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ZVP0120
F-185
20/a/B6
Ti7057fl
0Q07flflÃ
F-186
F-188
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ISD 2210
Abstract: No abstract text available
Text: ZETEX SEMICONDUCTORS TSD D Bi T'ïVOSTÔ D O O S b ? ? 2 MZETB 95D 0 5 6 7 7 T '3 ? '0 ? ZV N 2210 N-channel enhancement mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability
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ZVN2210B*
ZVN2210L
stability39
O-220
ISD 2210
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ZVN3320
Abstract: ZVN3320A ZVN3320F WOS78 ZVN3320B 200v 100mA mosfet
Text: bGE D • *n7D57fl DDD7flb7 434 ■ Z E T B _ , ZETEX S E M I C O N D U C T O R S N-channel enhancement mode vertical DMOS FET ZVN3320 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability •
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7057fl
ZVN3320
ZVN3320A
ZVN3320B
ZVN3320F
250in
100mA,
100mA
300/is.
ZVN3320
WOS78
200v 100mA mosfet
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Untitled
Abstract: No abstract text available
Text: bDE D <^70570 0D07T05 • Dlfi I IZETB ZETEX S E M I C O N D U C T O R S P-channel enhancement mode vertical DMOS FET ZVP1320 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance
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0D07T05
ZVP1320
F-204
F-205
F-207
F-208
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t5d diode
Abstract: No abstract text available
Text: ^53 ZETEX SEMICONDUCTORS D TÎ7QS7Ô OOOSbl? h • ZETB 95D 0 5 6 1 7 D — T -3 ? -0 °l ZV N 0124 N-channel enhancement mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability
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ZVN0124A
ZVN0124B
ZVN0124L
O-220
t5d diode
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