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    zl54

    Abstract: zl58 YL162 lcd T1Z12 Diode t1z75 T1Y30 t1z47 ARM cortex R7 processor ZL56 t1z24
    Text: Core Tile for ARM Cortex -R4F HBI-0196 User Guide Copyright 2009-2010 ARM Limited. All rights reserved. ARM DUI 0441B ID071010 Core Tile for ARM Cortex-R4F User Guide Copyright © 2009-2010 ARM Limited. All rights reserved. Release Information


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    HBI-0196 0441B ID071010) ID071010 zl54 zl58 YL162 lcd T1Z12 Diode t1z75 T1Y30 t1z47 ARM cortex R7 processor ZL56 t1z24 PDF

    CY7C167A

    Abstract: CY7C167A-35DMB
    Text: CY7C167A '0 CYPRESS 16K x 1 Static RAM Features Functional D escription • Automatic power-down when dese­ lected • CMOS for optimum speed/power • High speed — 15 ns • Low active power — 275 mW • Low standby power — 83 mW • TTL-compatible inputs and outputs


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    CY7C167A CY7C167A CY7C167Aâ 45DMB 20-Lead 300-Mil) 38-00093-C CY7C167A-35DMB PDF

    CY7C167A-35DMB

    Abstract: No abstract text available
    Text: CY7C167A CYPRESS SEMICONDUCTOR Features Functional Description • Automatic power-down when dese­ lected • CMOS for optimum speed/power • High speed — 15 ns • Low active power The CY7C167A is a high-performance CMOS static RAM organized as 16,384


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    CY7C167A CY7C167A 20-Lead 20-Lead 300-Mil) 0Q093-C CY7C167A-35DMB PDF

    a417b

    Abstract: No abstract text available
    Text: CY7B1094 CY7B1095 CY7B1096 . ä PRELIMINARY s O s r# " ‘Y P P F . Ç . ^ — SEMICONDUCTOR Features • H igh speed — tAA = 6 ns • B iC M O S fo r o p tim u m speed/pow er • Low active pow er — 900 mW • Low stan d b y pow er — 350 mW • A utom atic power-down w hen


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    CY7B1094 CY7B1095 CY7B1096 CY7B1096 a417b PDF