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    ZO 109 TRANSISTOR Search Results

    ZO 109 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    ZO 109 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR zo 109 ma

    Abstract: transistor zo 109 transistor 86 IC 7585 midium power uhf transistor B15V140 microwave transistor ZO 109 transistor
    Text: BIPOLARICS, INC. Part Number B15V140 MEDIUM POWER SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET DESCRIPTION AND APPLICATIONS: FEATURES: • Bipolarics' B15V140 is a high performance silicon bipolar transistor intended for medium power linear and Class C


    Original     		PDF B15V140 B15V140 OT-223 OT-103 TRANSISTOR zo 109 ma transistor zo 109 transistor 86 IC 7585 midium power uhf transistor microwave transistor ZO 109 transistor

    AT41500

    Abstract: AT-41500 transistor zo 109 TRANSISTOR zo 109 ma CHIP TRANSISTOR TRANSISTOR 12 GHZ 3 w RF POWER TRANSISTOR NPN 50/TRANSISTOR zo 109 ma transistor Gigahertz AT-41586
    Text: AT-41500 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Data Sheet Description/Applications Features The AT-41500 of Avago Techologies is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter pitch enables this transistor to be


    Original     		PDF AT-41500 AT-41500 AT-41500-GP4 AV01-0077EN AT41500 transistor zo 109 TRANSISTOR zo 109 ma CHIP TRANSISTOR TRANSISTOR 12 GHZ 3 w RF POWER TRANSISTOR NPN 50/TRANSISTOR zo 109 ma transistor Gigahertz AT-41586

    AT-41500

    Abstract: TRANSISTOR zo 109 ma transistor zo 109 ZO 109 transistor at41500
    Text: AT-41500 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Data Sheet Description/Applications Features The AT-41500 of Avago Techologies is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter pitch enables this transistor to be


    Original     		PDF AT-41500 AT-41500 AT-41500-GP4 AV01-0077EN TRANSISTOR zo 109 ma transistor zo 109 ZO 109 transistor at41500

    transistor NEC D 587

    Abstract: transistor NEC D 986 R13* MARKING TC-2365 marking R13 2SC4885 741 vtvm 230 624 533 392 P10410EJ2V0DS00 transistor NEC D 586
    Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES • Excellent Low NF in Low Frequency Band 2.1±0.1 • Low Voltage Use 1.25±0.1 • Low Cob : 0.9 pF TYP. Emitter to Base Voltage


    Original     		PDF 2SC4885 transistor NEC D 587 transistor NEC D 986 R13* MARKING TC-2365 marking R13 2SC4885 741 vtvm 230 624 533 392 P10410EJ2V0DS00 transistor NEC D 586

    transistor fb 31n

    Abstract: MRF5815 case 317-01 mrf581 SF-11N 5812 MOTOROLA 118-136 mhz specifications of ic 1408 MRF5812 MRF5812R1
    Text: MOTOROLA Order this document by MRF581/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon MRF581 High-Frequency Transistors MRF5812R1, R2 Designed for high current low power amplifiers up to 1.0 GHz. • Low Noise 2.0 dB @ 500 MHz • Low Intermodulation Distortion


    Original     		PDF MRF581/D MRF581 MRF5812R1, MRF5812 MRF581 transistor fb 31n MRF5815 case 317-01 SF-11N 5812 MOTOROLA 118-136 mhz specifications of ic 1408 MRF5812R1

    AT41586

    Abstract: AT-41586 AT-41586-BLK AT-41586-TR1 S21E
    Text: Low Cost General Purpose Transistors Technical Data AT-41586 Description • Low Noise Figure 1.4 dB Typical at 1 GHz 1.7 dB Typical at 2 GHz • High Associated Gain 17.0 dB Typical at 1 GHz 12.5 dB Typical at 2 GHz • Low Cost Surface Mount Package • Tape and Reel Option


    Original     		PDF AT-41586 AT-41586 AT41586 5965-8908E AT-41586-BLK AT-41586-TR1 S21E

    AT-41586

    Abstract: S21E TRANSISTOR zo 109 ma 41586
    Text: AT-41586 Low Cost General Purpose Transistors Data Sheet Description Features Avago’s AT-41586 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-41586 is housed in a low cost surface mount .085" diameter plastic package. The 4 micron emitter-to-emitter


    Original     		PDF AT-41586 AT-41586 5989-2651EN AV02-1459EN S21E TRANSISTOR zo 109 ma 41586

    AT-41586

    Abstract: AT-41586-BLK AT-41586-TR1 S21E 41586
    Text: Low Cost General Purpose Transistors Technical Data AT-41586 Description • Low Noise Figure 1.4 dB Typical at 1 GHz 1.7 dB Typical at 2 GHz • High Associated Gain 17.0 dB Typical at 1 GHz 12.5 dB Typical at 2 GHz • Low Cost Surface Mount Package • Tape and Reel Option


    Original     		PDF AT-41586 AT-41586 5963-7303E 5965-8908E AT-41586-BLK AT-41586-TR1 S21E 41586

    AT-41586

    Abstract: AT-41586-BLK AT-41586-TR1 S21E
    Text: Low Cost General Purpose Transistors Technical Data AT-41586 Description • Low Noise Figure 1.4 dB Typical at 1 GHz 1.7 dB Typical at 2 GHz • High Associated Gain 17.0 dB Typical at 1 GHz 12.5 dB Typical at 2 GHz • Low Cost Surface Mount Package • Tape and Reel Option


    Original     		PDF AT-41586 AT-41586 AT-41586-BLK AT-41586-TR1 S21E

    AT-41586

    Abstract: AT-41586-BLK AT-41586-TR1 S21E TRANSISTOR zo 109 ma
    Text: AT-41586 Low Cost General Purpose Transistors Data Sheet Description Features Avago’s AT-41586 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-41586 is housed in a low cost surface mount .085" diameter plastic package. The


    Original     		PDF AT-41586 AT-41586 5965-8908E 5989-2651EN AT-41586-BLK AT-41586-TR1 S21E TRANSISTOR zo 109 ma

    MMBR521LT1

    Abstract: MRF5211LT1 TO-236-AA
    Text: MOTOROLA Order this document by MMBR521LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line PNP Silicon High-Frequency Transistor MMBR521LT1 MRF5211LT1 Designed primarily for use in the high–gain, low–noise small–signal amplifiers for operation up to 3.5 GHz. Also usable in applications requiring fast


    Original     		PDF MMBR521LT1/D MMBR521LT1 MRF5211LT1 MMBR521LT1) MRF5211LT1) MMBR521LT1 MMBR521LT1/D* MRF5211LT1 TO-236-AA

    AT-32011

    Abstract: AT-31011 AT32011 AT-32033 AT-32033-TR1G sot-23 marking code 352
    Text: AT-32011, AT-32033 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-32011 and AT-32033 are high performance NPN bipolar transistors that have been optimized for maximum ft at low voltage operation, making them ideal


    Original     		PDF AT-32011, AT-32033 AT-32011 AT-32033 AT32011 OT-143. 5989-2643EN AV02-0796EN AT-31011 AT-32033-TR1G sot-23 marking code 352

    AT-32033-TR1g

    Abstract: AT-32011 AT-32011-BLK AT-32011-TR1 AT-32033 AT-32033-BLK
    Text: Agilent AT-32011, AT-32033 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Features Description Agilent’s AT-32011 and AT-32033 are high performance NPN bipolar transistors that have been optimized for maximum ft at low voltage operation, making them


    Original     		PDF AT-32011, AT-32033 AT-32011 AT-32033 OT-23, OT-143. OT-143 AT-32011) AT-32033-TR1g AT-32011-BLK AT-32011-TR1 AT-32033-BLK

    AT-31011

    Abstract: AT32011 AT-32011 AT-32033 AT-32033-TR1G sot-23 npn marking code 162
    Text: AT-32011, AT-32033 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-32011 and AT-32033 are high performance NPN bipolar transistors that have been optimized for maximum ft at low voltage operation, making them ideal


    Original     		PDF AT-32011, AT-32033 AT-32011 AT-32033 AT32011 OT-143. transis20 5989-2643EN AV02-0796EN AT-31011 AT-32033-TR1G sot-23 npn marking code 162

    AT-32011-BLK

    Abstract: AT-32011 AT-32011-TR1 AT-32033 AT-32033-BLK AT-32033-TR1 900 mhz oscillator ckt
    Text: Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32011 AT-32033 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance: AT-32011: 1 dB NF, 14 dB GA


    Original     		PDF AT-32011 AT-32033 AT-32011: AT-32033: OT-23 OT-143 AT-32011 AT-32033 AT-32011-BLK AT-32011-TR1 AT-32033-BLK AT-32033-TR1 900 mhz oscillator ckt

    AT-320

    Abstract: AT-32011 AT-32011-BLK AT-32011-TR1 AT-32033 AT-32033-BLK AT-32033-TR1 sot-23 marking code 352
    Text: Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32011 AT-32033 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance: AT-32011: 1 dB NF, 14 dB GA


    Original     		PDF AT-32011 AT-32033 AT-32011: AT-32033: OT-23 OT-143 AT-32011 AT-32033 OT-23, AT-320 AT-32011-BLK AT-32011-TR1 AT-32033-BLK AT-32033-TR1 sot-23 marking code 352

    AT-32011

    Abstract: AT-32011-BLK AT-32011-TR1 AT-32033 AT-32033-BLK
    Text: AT-32011, AT-32033 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-32011 and AT-32033 are high performance NPN bipolar transistors that have been optimized for maximum ft at low voltage operation, making them


    Original     		PDF AT-32011, AT-32033 AT-32011 AT-32033 OT-23, OT-143. AT-32011: AT-32033: AT-32011-BLK AT-32011-TR1 AT-32033-BLK

    Untitled

    Abstract: No abstract text available
    Text: Agilent AT-41586 Low Cost General Purpose Transistors Data Sheet Features The AT-41586 bipolar transistor is fabricated using Agilent’s 10 GHz fT Self-Aligned-Transistor SAT process. The die is nitride passivated for surface protection. 86 Plastic Package


    Original     		PDF AT-41586 AT41586 5965-8908E 5989-2651EN

    ATF-36077

    Abstract: ATF-36077-STR transistor atf 36077 hemt lnb ATF pHEMT TRANSISTOR zo 109 ma
    Text: ATF-36077 2–18 GHz Ultra Low Noise Pseudomorphic HEMT Data Sheet Description Features AvagoTechnologies' ATF-36077 is an ultra-low-noise Pseudo­ morphic High Electron Mobility Transistor PHEMT , packaged in a low parasitic, surface-mountable ceramic package.


    Original     		PDF ATF-36077 ATF-36077 5965-8726E AV02-1222EN ATF-36077-STR transistor atf 36077 hemt lnb ATF pHEMT TRANSISTOR zo 109 ma

    BFQ 58

    Abstract: No abstract text available
    Text: SIEM ENS NPN Silicon RF Transistor BFQ 29P • For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA. S CECC-type available: CECC 50002/258. ESD: Electrostatic discharge sensitive device, observe handling precautions!


    OCR Scan     		PDF Q62702-F659 OT-23 fi23SbDS BFQ 58

    1j0 919 506 k

    Abstract: 1251H AT82 I.C LA 3778
    Text: l ï l HEWLETT I S S fl P A C K A R D Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32011, AT-32033 Features Description • High Performance Bipolar Translator Optimized for Low Current, Low Voltage Operation • Am plifier T ested 900 MHz


    OCR Scan     		PDF AT-32011, AT-32033 OT-23 OT-143 AT-32011 AT-32033 6B63-6366E 1j0 919 506 k 1251H AT82 I.C LA 3778

    TC236

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES Excellent Low NF in Low Frequency Band 2 .1± 0.1 Low Voltage Use 1.25±0.1 Low Cob : 0 .9 pF T Y P . Low Noise Voltage : 90 mV TYP.


    OCR Scan     		PDF 2SC4885 SC-70 CO193 TC236

    Untitled

    Abstract: No abstract text available
    Text: r e « HEW LETT mLUM P A C K A R D Low Current, High Perform ance NPN Silicon Bipolar Transistor Technical Data AT-32011 AT-32033 F eatures Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance:


    OCR Scan     		PDF AT-32011 AT-32033 AT-32011: AT-32033: OT-23 OT-143 AT-32033 OT-23,

    marking code SOT23 SSi

    Abstract: AT-32011 AT-32011-BLK AT-32011-TR1 AT-32033 AT-32033-BLK AT-32033-TR1 code marking ssi sot-23
    Text: i Thaïï HEW LETT mLfiM PA C K A R D Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32011 AT-32033 Features • High Perform ance Bipolar T ransistor Optimized for Low Current, Low Voltage O peration • 900 MHz Performance:


    OCR Scan     		PDF AT-32011 AT-32033 AT-32011: AT-32033: OT-23 OT-143 OT-143 AT-32011) OT-23 AT-32033) marking code SOT23 SSi AT-32011-BLK AT-32011-TR1 AT-32033 AT-32033-BLK AT-32033-TR1 code marking ssi sot-23