Untitled
Abstract: No abstract text available
Text: SILICON TRANSISTOR NE58219 / 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The NE58219 / 2SC5004 is a low supply voltage transistor in millimeters designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the
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NE58219
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perfor516
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transistor zo 607
Abstract: zo 607 MA 2SC5004 2SC5004-T1 NE58219 NE58219-T1 nec 237 521 02 NE582
Text: DATA SHEET SILICON TRANSISTOR NE58219 / 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The NE58219 / 2SC5004 is a low supply voltage transistor in millimeters designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the
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NE58219
2SC5004
2SC5004
NE58219
NE58219-T1
2SC5004-T1
transistor zo 607
zo 607 MA
2SC5004-T1
NE58219-T1
nec 237 521 02
NE582
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NEC JAPAN 237 521 02
Abstract: transistor zo 607 2SC5004
Text: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the
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2SC5004
2SC5004
NEC JAPAN 237 521 02
transistor zo 607
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NEC NF 932
Abstract: ZO 103 MA 75 623 2SC5009 2SC5009-T1 TD-2430 power transistor 3055
Text: DATA SHEET SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS in milimeters noise figure, high gain, and high current capability achieve a very wide 1.6± 0.1 0.8± 0.1 dynamic range and excellent linearity. This is achieved by direct nitride
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2SC5009
2SC5009
NEC NF 932
ZO 103 MA 75 623
2SC5009-T1
TD-2430
power transistor 3055
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TD2400
Abstract: transistor zo 607 2SC5007 2SC5007-T1 NEC 1555 AK-804 164-1-1
Text: DATA SHEET SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range
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2SC5007
2SC5007
TD2400
transistor zo 607
2SC5007-T1
NEC 1555
AK-804 164-1-1
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Rev. 1, 1/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6P21190HR6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
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2SC5007
Abstract: 2SC5007-T1
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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NEC JAPAN 237 521 02
Abstract: nec 237 521 02 transistor zo 607 2SC5004
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2SC5009
Abstract: 2SC5009-T1
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2SC5007
Abstract: No abstract text available
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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2SC5004
Abstract: No abstract text available
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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marking GG
Abstract: marking code 604 SOT23
Text: NPN Silicon RF Transistor BFR 93P • For low -distortion broadband am plifiers up to 1 GHz at collector currents from 2 to 30 mA. c ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel Package
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OT-23
marking GG
marking code 604 SOT23
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D 1437 transistor
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2 S C 5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/M IX. It is suitable for a high density surface mount assembly since the
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D 1437 transistor
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transistor NEC B 617
Abstract: nec. 5.5 473
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range
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2SC5007
2SC5007
transistor NEC B 617
nec. 5.5 473
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NEC 1357
Abstract: LA 8873 TRANSISTOR C 4460
Text: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/MIX. It is suitable for a high density surface mount assem bly since the
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2SC5004
2SC5004
NEC 1357
LA 8873
TRANSISTOR C 4460
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2SC 968 NPN Transistor
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 0 7 is an NPN e p ita x ia l silico n tra n s is to r d e s ig n e d fo r use in lo w no ise and sm a ll sig n a l a m p lifie rs from
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2SC5007
2SC 968 NPN Transistor
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ZO 107 MA
Abstract: 341S
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in low noise and small signal am plifiers from VHF band to L band. Low
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2SC5009
2SC5009
ZO 107 MA
341S
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tda2054m
Abstract: tda2054 2054M
Text: S G S - T H O H S O N 07 E D .v jir : ^ J I 713 1 5 3 7 *>u n i v , J p i u o ^ « U K 0 0 1 5 7 10 □ L liK F u. S LINEAR INTEGRATED CIRCUITS PR EA M PLIFIER WITH ALC FOR Cr0 2 ' 1 T-74-05-01 ^ - ^ - y jj TDA2054M CASSETTE RECORDERS • E X C E L L E N T V E R S A T IL IT Y IN U S E V s from 4 to 20V
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T-74-05-01
TDA2054M
2054M
16-lead
13-Frequency
tda2054m
tda2054
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Untitled
Abstract: No abstract text available
Text: SIEMENS Digital Deflection Controller SDA 9064-5 Preliminary Data NMOS IC Features • Pipeline processor structure controls deflection stages • Raster alignment by keyboard or automatically • Adaptable beam current compensation for picture height and width
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100-/120-Hz
Q67100-H8382
P-DIP-40-1
fl235b05
P-LCC-44-1
fl23Sfc
A235b05
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TRANSISTOR 2SC 2581
Abstract: 2sc 1919 NEC NF 932 2sc 1915 TRANSISTOR 2SC 733
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low PACKAGE DIMENSIONS
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2SC5009
2SC5009
TRANSISTOR 2SC 2581
2sc 1919
NEC NF 932
2sc 1915
TRANSISTOR 2SC 733
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motorola 3-251
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F 1EE D | b3b?5S4 0001.531. S | T ~ ^ 1*317 M A X I M U M R ATIN G S Sym bol V alue U n it Colfector-Em itter Voltag e Rating V CEO 40 Vdc C o llector-B ase V oltag e Vc b o 50 Vdc E m itter-Base V oltag e vebo 5.0 Vdc !C 50 m Adc C o lle cto r Current — Co ntinu ou s
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MD3250,
MD3251,
MQ3251
D3251
D3250
Q3251
motorola 3-251
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SAA3006
Abstract: No abstract text available
Text: DEVELO PM EN T DATA SAA3006 This data sheet contains advance inform ation and specifications are subject to change w ith o u t notice. > V _ LOW VOLTAGE INFRARED REMOTE CONTROL TRANSMITTER RC-5 G E N E R A L D ESC RIPTIO N The SAA3006 is intended as a general purpose <RC-5) infrared remote control system for use where
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SAA3006
SAA3006
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2T6551
Abstract: information applikation information applikation mikroelektronik mikroelektronik Heft KD 605 KT825 transistoren KT 960 A Mikroelektronik Information Applikation KT827 mikroelektronik DDR
Text: im S l^ is B le l- c t s n o r iil- c Information Informations- und Applikationshefte „ M IK R O E L E K T R O N IK " Bisher ersch ien en : Heft Heft Heft Heft Heft Heft Heft 1: 2: 3: 4: 5: 6: 7: A 210 und 211 A 301 A 290 A 202 A 244 und A281 Importbauelem ente RGW „IS"
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