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    ZPD42 Search Results

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    ZPD42 Price and Stock

    ROHM Semiconductor SDR03EZPD4223

    HIGH ANTI-SURGE THICK FILM CHIP
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    DigiKey SDR03EZPD4223 Cut Tape 9,846 1
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    SDR03EZPD4223 Reel 5,000 5,000
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    Mouser Electronics SDR03EZPD4223
    • 1 $0.22
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    Chip1Stop SDR03EZPD4223 Cut Tape 5,000
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    CoreStaff Co Ltd SDR03EZPD4223 5,000
    • 1 $0.093
    • 10 $0.069
    • 100 $0.032
    • 1000 $0.019
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    ROHM Semiconductor ESR10EZPD4220

    Thick Film Resistors - SMD 0805 422ohm 0.50% Anti Surge AEC-Q200
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    Mouser Electronics ESR10EZPD4220
    • 1 $0.28
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    ZPD42 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    d802 P nec

    Abstract: D42S17805LG5-A60 358 ez 802 D42S17805LG5 d802 q nec ELF AMPLIFIER
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT =_/ /zPD42S17805L, 4217805L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, HYPER PAGE MODE D e s c rip tio n The /iP D 42S 17805L, 4217805L are 2,097,152 words by 8 bits CMOS dynam ic RAMs with optional hyper page


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    PDF uPD42S17805L uPD4217805L 17805L, 4217805L PD42S17805L 42S17805L, 28-pin pPD42S17805L-A60, d802 P nec D42S17805LG5-A60 358 ez 802 D42S17805LG5 d802 q nec ELF AMPLIFIER

    424800-70

    Abstract: nec 424800 JPD42S4800 PD424800LE-70 424800L 424800g5
    Text: NEC MOS INTEGRATED CIRCUIT juPD42S4800, 424800 4M -BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE Description The /zPD42S4800, 424800 are 524 288 words by 8 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.


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    PDF uPD42S4800 uPD424800 /zPD42S4800, /jPD42S4800 28-pin /iPD42S4800-70, VP15-207-2 424800-70 nec 424800 JPD42S4800 PD424800LE-70 424800L 424800g5

    4N500

    Abstract: IC 741 cn
    Text: b427555 GG42530 Tfc.7 « N E C E / / MOS INTEGRATED CIR CU IT ju P D 4 2 S 1 6 1 9 0 , 4 2 S 1 7 1 9 0 , 4 2 S 1 8 1 9 0 16 M B IT D Y N A M IC RAM FA S T PA G E M O D E & B Y T E W R IT E M O DE - P R E LIM IN A R Y -D E S C R IP T IO N


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    PDF b427555 GG42530 uPD42S16190 uPD42S17190 uPD42S18190 475mil) P32VF-100-475A P32VF-100-475A 4N500 IC 741 cn

    IC MARKING A60

    Abstract: IC 741 cn
    Text: fa427S25 0D452bl *NECE MOS INTEGRATED CIRCUIT /¿ P D 4 2 S 1 6 9 0 0 L ,4 2 S 1 7 9 0 0 L 16 M BIT D Y N A M IC RAM 3 .3 V FAST PAGE M O DE P R E L IM IN A R Y DESCRIPTIO N The NEC # PD42S16900L and n PD42S17900L are 2 097 152 words by 9 b its dynamic CMOS RAM


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    PDF fa427S25 0D452bl uPD42S16900L uPD42S17900L //PD42S16900L) b427525 004EbBL> 475mil) P32VF-100-475A P32VF-100-475A IC MARKING A60 IC 741 cn

    LE347

    Abstract: toba Q 0265 R HS 8180 42S18180
    Text: L427S2S DQ4 2 4 M4 b 70 • NECE MOS INTEGRATED CIRCUIT ju P D 4 2 S 1 6 1 8 0 ,4 2 S 1 7 1 8 0 ,4 2 S 1 8 1 8 0 16 M BIT D Y N A M IC RAM FAST PAGE M O D E & BYTE R E A D /W R IT E M ODE - P R E LIM IN A R Y -D ESCRIPTIO N


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    PDF L427S2S uPD42S16180 uPD42S17180 uPD42S18180 475mil) P32VF-100-475A LE347 toba Q 0265 R HS 8180 42S18180

    424260 NEC

    Abstract: 424260-80
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD42S4260, 424260 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description T h e //P D 42S 4260,424260 are 262,144 w o rd s by 16 b its d y n a m ic C M OS R A M s. T h e fa s t page m o d e and b yte


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    PDF PD42S4260, 16-BIT, /iPD42S4260 44-pin 40-pin 0057Li51 424260 NEC 424260-80

    Untitled

    Abstract: No abstract text available
    Text: MOS INTEGRATED CIRCUIT ¿¿PD4 2 S 1 6 1 6 5 L , 4 2 1 6 1 6 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE D escription The ì ì PD42S16165L, 4216165Lare 1 048 576 w ords by 16 bits dynamic CMOS RAMs w ith optional hyper page


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    PDF 16-BIT, PD42S16165L, 4216165Lare uPD42S16165L 4216165L 50-pin 42-pin 6165L-A L427525

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT M>D42S16800,4216800,42S17800,4217800 16 M BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE DESCRIPTION ★ The MPD42S16800, 4216800, 42S17800, 4217800 are 2 097 152 words by 8 bits dynamic CMOS RAMs. These differ in refresh cycle and the //PD42S16800, 42S17800 can execute CAS before RAS self refresh.


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    PDF D42S16800 42S17800 MPD42S16800, 42S17800, //PD42S16800, 28-pin juPD42S

    S4800L

    Abstract: nec 424800 zx3A PD42S4800 tda 1006 D424800
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT //PD42S4800, 424800 4 M-BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE Description The iiP042S 4800, 424800 are 524,288 words by 8 bits CMOS dynamic RAM s. The fast page mode capability realize high speed access and low power consumption.


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    PDF uPD42S4800 uPD424800 iiP042S fiPD42S4800 28-pin PD42S4800-60, jPD42S4800-7Q, PD42S4800-80. PD42S4800-10, S4800L nec 424800 zx3A PD42S4800 tda 1006 D424800

    UPD4216805L

    Abstract: No abstract text available
    Text: NEC MOS INTEGRATED CIRCUIT j u P D 42S 16805L , 4 2 1 6 8 0 5 L 3.3 V OPERATION 16 M BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, HYPER PAGE MODE D escription The //PD42S16805L, 4216805L are 2 097 152 words by 8 bits dynamic CMOS RAMs w ith optional hyper page mode.


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    PDF uPD42S16805L uPD4216805L PD42S16805L, 4216805L 28-pin //PD42S16805L-A60, 4216805L-A60 PD42S16805L-A70, 4216805L-A70

    nec A2C

    Abstract: No abstract text available
    Text: MOS INTEGRATED CIRCUIT ju P D 4 2 S 1 6 1 6 5 L , 4 2 1 6 1 6 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The|iPD42S16165L, 4216165Lare 1 048 576 w ords by 16 bits dynamic CMOS RAMs w ith optional hyper page


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    PDF 16-BIT, uPD42S16165L uPD4216165L /JPD42S16165L, 4216165L 50-pin 42-pin pPD42S16165L-A60, 4216165L-A60 /iPD42Sl6165L-A70, nec A2C

    PD4264800

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NEC / MOS INTEGRATED CIRCUIT / ¿¿PD4264800, 4265800 64M -B IT DYNAMIC RAM 8 M-WORD BY 8-BIT, FAST PAGE MODE D e s c rip tio n The iiPD 4264800, 4265800 are 8,388,608 w ords by 8 bits dynam ic CMOS RAMs. The fast page mode capability


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    PDF uPD4264800 uPD4265800 32-pin PD4264800-A50 /PD4265800-A50 /JPD4264800-A60 /JPD4265800-A60 /JPD4264800-A70 /JPD4265800-A70 PD4264800

    MPD424260

    Abstract: 424260-70 nec japan
    Text: DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD42S4260, 424260 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The /¿PD42S4260,424260 are 262,144 words by 16 bits dynamic CMOS RAMs. The fast page mode and byte read/write mode capability realize high speed access and low power consumption.


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    PDF uPD42S4260 uPD424260 16-BIT, PD42S4260 44-pin 40-pin PD42S4260-70, /iPD42S VP15-207-2 MPD424260 424260-70 nec japan

    Untitled

    Abstract: No abstract text available
    Text: NEC MOS INTEGRATED CIRCUIT /¿PD42S16800L, 4216800L, 42S17800L, 4217800L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE DESCRIPTION The ¿¿PD42S16800L, 4216800L, 42S17800L, 4217800L are 2 097 152 words by 8 bits dynamic CMOS RAMs.


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    PDF uPD42S16800L uPD4216800L uPD42S17800L uPD4217800L PD42S16800L, 4216800L, 42S17800L, 4217800L /iPD42S16800L, 42S17800L

    4216100

    Abstract: 4216100-70
    Text: DATA SHEET MOS INTEGRATED CIRCUIT MD42S16100, 4216100,42S17100,4217100 16 M-BIT DYNAMIC RAM 16 M-WORD BY 1-BIT, FAST PAGE MODE DESCR IPTIO N The /¿PD42S16100, 4216100, 42S17100, 4217100 are 16 777 216 w ords by 1 bit dynam ic CMOS RAMs. These differ in refresh cycle and the /iPD42S16100, 42S17100 can execute CAS before RAS self refresh. They


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    PDF MD42S16100, 42S17100 uPD42S16100 uPD4216100 uPD42S17100 uPD4217100 /iPD42S16100, //PD42S16100, 4216100 4216100-70

    NEC 4216160

    Abstract: No abstract text available
    Text: MOS INTEGRATED CIRCUIT f iPD42S16160,4216160,42S18160,4218160 16 M -BIT DYNAM IC RAM 1 M -W ORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE DESCRIPTION The mPD42S16160, 4216160, 42S18160, 4218160 are 1 048 576 words by 16 bits dynamic CMOS RAMs. These differ in refresh cycle and the /iPD42S16160, 42S18160 can execute CAS before RAS self refresh (see


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    PDF uPD42S16160 uPD4216160 uPD42S18160 uPD4218160 16-BIT, 42S16160, 42S18160, /iPD42S16160, 42S18160 50-pin NEC 4216160

    6400L-A5G

    Abstract: d4216400
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / ¿¿PD42S16400L, 4216400L, 42S17400L, 4217400L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD B Y 4-BIT, F A S T P A G E M ODE Description The /iPD42S16400L, 4216400L, 42S17400L, 4217400L are 4,194,304 words by 4 bits CMOS dynamic RAMs. The


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    PDF uPD42S16400L uPD4216400L uPD42S17400L uPD4217400L /iPD42S16400L, 4216400L, 42S17400L, 4217400L JUPD42S16400L, 42S17400L 6400L-A5G d4216400

    NEC 424400-70

    Abstract: PD42S4400 NEC 424400 uPD424400 NEC 424400-60
    Text: DATA SHEET MOS INTEGRATED CIRCUIT /¿PD42S4400, 424400 4 M-BIT DYNAMIC RAM 1 M-WORD BY 4-BIT, FAST PAGE MODE Description The |iPD42S4400, 424400 are 1,048,576 words by 4 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.


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    PDF uPD42S4400 uPD424400 iPD42S4400, /xPD42S4400 26-pin //PD42S4400-60, PD42S4400-70, //PD424400-80 //PD424400-10 NEC 424400-70 PD42S4400 NEC 424400 NEC 424400-60

    IPD42S18165-60

    Abstract: tfk 014 PD42S18165 HV Tr 3 TFK 227 PD4218165
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / /¿ P D 4 2 S 1 8 1 6 5 , 4 2 1 8 1 6 5 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE D e s c rip tio n The ,uPD42S18165,4218165 are 1,048,576 words by 16 bits C M O S dynamic RAMs with optional hyper page mode


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    PDF 16-BIT, uPD42S18165 uPD4218165 fiPD42S18165 PD42S18165, 50-pin 42-pin iPD42S18165-60, PD42S18165-70, 043lg IPD42S18165-60 tfk 014 PD42S18165 HV Tr 3 TFK 227 PD4218165

    Untitled

    Abstract: No abstract text available
    Text: fc.M2752S O O M B m a 573 NECE / MOS INTEGRATED CIRCUIT / /¿PD42 S 16100 L,42 S 171 OOL | 16 M BIT DYNAMIC RAM 3 .3 V FAST PAGE MODE -PRELIMINARY-D ESCRIPTION The NEC ¡ i PD42S16100L and juPD42S17100L are 16 777 216 words by 1 b it dynamic CMOS RAM with


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    PDF M2752S uPD42S16100L uPD42S17100L PD42S16100L) 475mil) P32VF-100-475A P32VF-100-475A

    Untitled

    Abstract: No abstract text available
    Text: N EC MOS INTEGRATED CIRCUIT _ _ _ _ _ _ _ _ HPD42S16160L, 4216160L, 42S18160L, 4218160L 3.3 V OPERATION 16M-BIT DYNAMIC RAM 1M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE DESCRIPTION The fiPD42S16160L, 4216160L, 42S18160L, 4218160L are 1 048 576 w o rd s by 16 bits d yn a m ic CMOS RAMs.


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    PDF uPD42S16160L uPD4216160L uPD42S18160L uPD4218160L 16M-BIT 16-BIT, fiPD42S16160L, 4216160L, 42S18160L, 4218160L

    4800L

    Abstract: IC-3052B uPD424800 UPD42S480
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT juPD42S4800L, 424800L 3.3 V OPERATION 4 M-BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE Description The /¿PD42S4800L, 424800L are 524 288 words by 8 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.


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    PDF uPD42S4800L uPD424800L PD42S4800L, 424800L PD42S4800L 28-pin //PD42S4800L-A70, 424800L-A70 /JPD42S4800L-A80, 4800L IC-3052B uPD424800 UPD42S480

    Untitled

    Abstract: No abstract text available
    Text: bMS7SaS DOMSSSÜ 84T B N E C E MOS INTEGRATED C IR CU IT /¿PD42S16160,42S17160,42S18160 16 M BIT D Y N A M IC RAM FAST PAGE M O D E & BYTE R E A D /W R IT E M O DE - P R E L I M I N A R Y -DESCRIPTIO N The NEC ; ì PD42S16160, ¿¿PD42S17160 and /¿PD42S18160 are 1 048 576 words by 16 b it s dynamic


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    PDF PD42S16160 42S17160 42S18160 PD42S16160, PD42S17160 PD42S18160 P32VF-100-475A

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT riuPD42S16800L#4216800L, 42S17800L, 4217800L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE DESCRIPTION * The iiPD42S16800L, 4216800L, 42S17800L, 4217800L are 2 097 152 words by 8 bits dynamic CMOS RAMs.


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    PDF riuPD42S16800L 4216800L, 42S17800L, 4217800L iiPD42S16800L, 4217800L PD42S16800L, 42S17800L