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    ZXMC3A16DN8TA Price and Stock

    Diodes Incorporated ZXMC3A16DN8TA

    MOSFET N/P-CH 30V 4.9A/4.1A 8SO
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    DigiKey ZXMC3A16DN8TA Cut Tape 28,390 1
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    ZXMC3A16DN8TA Reel 28,075 500
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    Avnet Americas ZXMC3A16DN8TA Reel 12 Weeks 500
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    Mouser Electronics ZXMC3A16DN8TA 405
    • 1 $1.53
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    Arrow Electronics ZXMC3A16DN8TA 3,000 12 Weeks 500
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    Newark ZXMC3A16DN8TA Cut Tape 5
    • 1 $1.62
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    RS ZXMC3A16DN8TA Bulk 5
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    Future Electronics ZXMC3A16DN8TA Reel 12 Weeks 500
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    ZXMC3A16DN8TA Reel 12 Weeks 500
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    TME ZXMC3A16DN8TA 1
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    Avnet Silica ZXMC3A16DN8TA 500 14 Weeks 500
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    New Advantage Corporation ZXMC3A16DN8TA 500 1
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    Diodes Incorporated ZXMC3A16DN8TC

    MOSFETs Cmp 30V NP Ch UMOS
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    Mouser Electronics ZXMC3A16DN8TC 3,277
    • 1 $1.55
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    Zetex / Diodes Inc ZXMC3A16DN8TA

    Trans MOSFET N/P-CH 30V 4.9A/4.1A 8-Pin SOIC T/R
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    Verical ZXMC3A16DN8TA 3,000 500
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    ZXMC3A16DN8TA Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ZXMC3A16DN8TA Zetex Semiconductors COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET Original PDF
    ZXMC3A16DN8TA Zetex Semiconductors COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET Original PDF

    ZXMC3A16DN8TA Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    ZXMC3A16DN8

    Abstract: ZXMC3A16DN8TA ZXMC3A16DN8TC zxmc 3a16
    Text: ZXMC3A16DN8 COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET SUMMARY N-Channel V BR DSS = 30V; RDS(ON) = 0.035 ; ID= 6.4A P-Channel V(BR)DSS = -30V; RDS(ON) = 0.048 ; ID= -5.4A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure


    Original     		ZXMC3A16DN8 ZXMC3A16DN8TA ZXMC3A16DN8 ZXMC3A16DN8TA ZXMC3A16DN8TC zxmc 3a16 PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXMC3A16DN8 COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET SUMMARY N-Channel V BR DSS = 30V; RDS(ON) = 0.035 ; ID= 6.4A P-Channel V(BR)DSS = -30V; RDS(ON) = 0.045 ; ID= -5.5A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching


    Original     		ZXMC3A16DN8 ZXMC3A16DNds PDF

    zxmc 3a16

    Abstract: No abstract text available
    Text: ZXMC3A16DN8 COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET SUMMARY N-Channel V BR DSS = 30V; RDS(ON) = 0.035 ; ID= 6.4A P-Channel V(BR)DSS = -30V; RDS(ON) = 0.045 ; ID= -5.5A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching


    Original     		ZXMC3A16DN8 ZXMC3A16DN8TA ZXMC3A16DN8TC uni701-04 zxmc 3a16 PDF

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2 PDF

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor PDF

    ZXMC3A16DN8

    Abstract: ZXMC3A16DN8TA ZXMC3A16DN8TC zxmc 3a16 135s3
    Text: ZXMC3A16DN8 COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET SUMMARY N-Channel V BR DSS = 30V; RDS(ON) = 0.035 ; ID= 6.4A P-Channel V(BR)DSS = -30V; RDS(ON) = 0.048 ; ID= -5.4A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure


    Original     		ZXMC3A16DN8 ZXMC3A16DN8TA ZXMC3A16DN8 ZXMC3A16DN8TA ZXMC3A16DN8TC zxmc 3a16 135s3 PDF

    GE1030

    Abstract: FSV064 fmmt451ta ZXM61N03FTA FST866FTD ZXTN25050DFHTA BS250FTA ZXMP3F37DN8TA sot23-6
    Text: PRODUCT CHANGE NOTICE DCS/PCN-1119 Rev 00 Contact Date: Implementation Date: Alert Category: Alert Type: PCN #: October 30, 2008 November 13, 2008 Integrated Circuits and Discrete Semiconductors New manufacturing location and addition of new mould compounds


    Original     		DCS/PCN-1119 PCN-1119 OT223, OD323, OD523, OT323, OT23-6, OT23-5 GE1030MOT223 ZXTP2014GTC GE1030 FSV064 fmmt451ta ZXM61N03FTA FST866FTD ZXTN25050DFHTA BS250FTA ZXMP3F37DN8TA sot23-6 PDF

    AP3039AM

    Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
    Text: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)


    Original     		2000/53/EC 2000/53/EC 2002/95/EC 2011/65/EU SOR/2014-254 SJ/T11363-2006 GL-106 AP3039AM 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502 PDF

    AEC-Q101

    Abstract: AEC-Q100 BSS138TA DMP2066 BAT54TA FZT953TA BSS123TA FMMT458TA FZT749TA FMMT591ATA
    Text: AEC-Q100/AEC-Q101 Automotive Grade Devices Part Number Part Number Part Number 1N4005GT 1N4148W 1N4148WS 1N4448HLP 1N4448W 1N4448WS 2DA1774Q 2DA1774QLP 2DC4617Q 2DC4617QLP 2DD2150R 2N7002 2N7002A 2N7002DW 2N7002K 2N7002TA 2N7002V 2N7002VA 2N7002VAC 2N7002VC


    Original     		AEC-Q100/AEC-Q101 1N4005GT 1N4148W 1N4148WS 1N4448HLP 1N4448W 1N4448WS 2DA1774Q 2DA1774QLP 2DC4617Q AEC-Q101 AEC-Q100 BSS138TA DMP2066 BAT54TA FZT953TA BSS123TA FMMT458TA FZT749TA FMMT591ATA PDF

    ZXMC3A16DN8

    Abstract: ZXMC3A16DN8TA ZXMC3A16DN8TC
    Text: ZXMC3A16DN8 COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET SUMMARY N-Channel V BR DSS = 30V; RDS(ON) = 0.035 ; ID= 6.4A P-Channel V(BR)DSS = -30V; RDS(ON) = 0.048 ; ID= -5.4A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching


    Original     		ZXMC3A16DN8 ZXMC3A16DN8TA ZXMC3A16DN8 ZXMC3A16DN8TA ZXMC3A16DN8TC PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXMC3A16DN8 COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET SUMMARY N-Channel V BR DSS = 30V; RDS(ON) = 0.035 ; ID= 6.4A P-Channel V(BR)DSS = -30V; RDS(ON) = 0.048 ; ID= -5.4A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure


    Original     		ZXMC3A16DN8 ZXMC3A16DNlephone: PDF

    zxczm800

    Abstract: SDPB1K10NB-7 zds1002 1N4007 MINI MELF ZXCZA200 SBR40S45CT ZXCZM800QPATR ZLNB153X8TC zxnb4200 zetex BSS138TA
    Text: Corporate Address: 15660 N. Dallas Parkway, Suite 850, Dallas, TX 75248 USA Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (ROHS) 2002/95/EC Waste Electrical and Electronic Equipment (WEEE)


    Original     		2000/53/EC 2000/53/EC 2002/95/EC SJ/T11363-2006 zxczm800 SDPB1K10NB-7 zds1002 1N4007 MINI MELF ZXCZA200 SBR40S45CT ZXCZM800QPATR ZLNB153X8TC zxnb4200 zetex BSS138TA PDF