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SI-FOTODETEKTOREN 4. Fototransistoren
TA = 25 °C
Package Type Radiant sensitive area
SILICON PHOTODETECTORS 4. Phototransistors
TA = 25 °C
IPCE ( = 950 nm, Ee = 0.5 mW/cm2, VCE = 5 V)
mA 10%