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DSA00329884.pdf
by Infineon Technologies
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IPB160N04S4-H1 OptiMOS®-T2 Power-Transistor Product Summary V DS R DS(on) ID 40 1.6 160 V mW A Features · N-channel - Enhancement mode · AEC qualified · MSL1 up to 260°C peak reflow · 175°C o
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4N04H1
73 marking
ipb160n
IPB160N04S4-H1
PG-TO263-7-3