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DSAIHSC000104218.pdf
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TOSHIBA MICROWAVE POWER GaAs FET TIM1213-10 Internally Matched Power GaAs FETs (X, Ku-Band) Features ⢠High power - PidB = 40.5 dBm at 12.7 GHz to 13.2 GHz ⢠High gain - GidB - 6.0 dB
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