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    DSAZIHA100022609.pdf by American Microsemiconductor

    • MG30G2DM1 Transistors Independent MOSFET Power Module Circuits Per Package2 V(BR)DSS (V)450 V(BR)GSS (V)20 I(D) Max. (A)30 Absolute Max. Power Diss. (W)250 Maximum Operating Temp (øC)150õ Th
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