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    DSAZIHA100017438.pdf by American Microsemiconductor

    • 2N1116 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V(BR)CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)800m Absolute Max. Power Diss. (W)600m Maximum Operating Temp (øC)200þ I(CBO) Max. (A)15u
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