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    DSAZIHA100059994.pdf by American Microsemiconductor

    • 1N3490 Thyristors Four-Layer (Shockley) Diode V(BO) Min. (V)16 V(BO) Max. (V)24 I(S) Max. (A)125u I(TRM) Max. (A)10 @ t(w) (s) (Test Condition)10u I(TSM) Max. (A)10 V(R) Max. (V)12 I(H) Max.
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