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    DSA00589945.pdf by Renesas Electronics

    • Preliminary Datasheet RJK6014DPP-E0 600V - 16A - MOS FET High Speed Power Switching Features Low on-resistance RDS(on) = 0.475 typ. (at ID = 8 A, VGS = 10 V, Ta = 25 C) Low leakage current H
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