DSA00533176.pdf by ON Semiconductor

Partial File Text NGB8206N Ignition IGBT 20 A, 350 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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