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Partial File Text ï»¿mi TO^ej^iira Insulated Gate Bipolar Transistor IGT4D10.E10 10 AMPERES 400,500 VOLTS EQUIV. RDS(ON) = 0.27 n This IGT" Transistor (insulated Gate Bipolar Transistor) is a new type of MOS-gate t
Datasheet Type Scan
RoHS No
Pb Free Unknown
Lifecycle Obsolete

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IGT4D10 IGT4E10 VQE 12 VQE 22

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