DSA0099889.pdf by RF Micro Devices

Partial File Text TA0012 TA0012 RF2123: New High Power, High Efficiency HBT GSM Power Amplifier efficiency is extremely important. Sixty percent total efficiency for a two-stage, 30dB gain
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gsm cellular power amplifier HBT transistor RF2123 TA0012 trw RF POWER TRANSISTOR trw rf transistor