DSAEDA00039000.pdf by Fairchild Semiconductor

Partial File Text FDMC4435BZ P-Channel Power TrenchÂ® MOSFET -30 V, -18 A, 20 m: Features General Description Â Max rDS(on) = 20 m: at VGS = -10 V, ID = -8.5 A This P-Channel MOSFET is produced using Fairc
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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