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    DSA2IH00100615.pdf by Not Available

    • MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 39V 7785A 7 .7 DESCRIPTION The M G F C 3 9 V 7 7 8 5 A is an internally im pedance-m atched GaAs power FET especially designed fo r use in 7 . 7 - 8 .
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