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DSAE0010510.pdf
by Infineon Technologies
Partial File Text
IPB180N06S4-H1 OptiMOS®-T2 Power-Transistor Product Summary V DS 60 V R DS(on),max 1.7 m ID 180 A Features PG-TO263-7-3 · N-channel - Enhancement mode · AEC Q101
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User Tagged Keywords
4N06H1
IPB180N06S4-H1
PG-TO263-7-3
SMD Diode
TO263-7
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