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DSA00514568.pdf
by Cree
Partial File Text
UGF21030 30W, 2.1 GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2
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Unknown
Pb Free
Unknown
Lifecycle
Unknown
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Cree Microwave
MRF21030
UGF21030
UGF21030F
UGF21030P
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