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Insulated Gate Bipolar Transistors (IGBT)
"S" and "L" series with improved SCSOA capability
Type
Vms
V
c
;.
VOtlsst) max. V
3.5 2.5 3.5 2.7 3.0 4.0 3.0 2.7 3.0 3.0 4.0 3.5 4.0
C w