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    • FLM1011-6F Internally Matched Power GaAs FETs FEATURES · High Output Power: P-idg = 37.5dBm (Typ.) · High Gain: G -j^B = 7.5dB (Typ.) · High PAE: r iadd = 28% (Typ.) · Low IM3 = -45dBc@Po = 25dBm ·
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