"P-Channel JFET"
Abstract: SHD231009 "P-Channel JFET" semiconductor p jfet
Text: SENSITRON SEMICONDUCTOR SHD231009 TECHNICAL DATA DATA SHEET 4305, REV - HERMETIC P-CHANNEL JFET FEATURES: • 30 V, 75 Ω, 30 mA P-Channel JFET • Hermetically Sealed • Surface Mount Package: Ceramic LCC-3 MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25°C UNLESS OTHERWISE SPECIFIED.
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SHD231009
"P-Channel JFET"
SHD231009
"P-Channel JFET" semiconductor
p jfet
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Untitled
Abstract: No abstract text available
Text: LS846 N-CHANNEL JFET Linear Systems Low Leakage Low Noise JFET The LS846 is a high-performance JFET featuring extremely low noise and low leakage and is targeted for use in a wide range of precision instrumentation applications. The 8 Pin P-DIP and 8 Pin SOIC provide ease of
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LS846
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MMBFJ177LT1
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document byMMBFJ177LT1/D DATA I o JFET Chopper P-Channel — Depletion 2 SOURCE MMBFJ177LTI I A G:TE+ Y ~.,l~~+i ;.:,’ ‘ *., *b,. .,.K.:\’:~ 1 DRAIN ! .:.\.> Rating Voltage Reverse Gat*Source Voltage Symbol
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byMMBFJ177LT1/D
MMBFJ177LTI
OT-23
O-236AB)
14WI-2447
2W29298
MMBFJ177LT1/D
MMBFJ177LT1
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Untitled
Abstract: No abstract text available
Text: 2N5114 SERIES SINGLE P-CHANNEL JFET SWITCH FEATURES REPLACEMENT FOR SILICONIX 2N5114, 2N5115, 2N5116 LOW ON RESISTANCE 75Ω LOW CAPACITANCE 6pF ABSOLUTE MAXIMUM RATINGS1 @ 25 °C unless otherwise stated Maximum Temperatures Storage Temperature -65 to 150°C
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2N5114
2N5114,
2N5115,
2N5116
500mW
-50mA
25-year-old,
2N5114
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Untitled
Abstract: No abstract text available
Text: J/SST174 SERIES SINGLE P-CHANNEL JFET SWITCH FEATURES Replacement For SILICONIX J/SST174 SERIES rDS on ≤ 85Ω LOW ON RESISTANCE LOW GATE OPERATING CURRENT ABSOLUTE MAXIMUM RATINGS ID(off) = 10pA 1 @ 25 °C (unless otherwise stated) Maximum Temperatures
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J/SST174
OT-23
350mW
-50mA
25-year-old,
SST174
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Untitled
Abstract: No abstract text available
Text: 2N5114 SERIES SINGLE P-CHANNEL JFET FEATURES REPLACEMENT FOR SILICONIX 2N5114, 2N5115, 2N5116 75Ω LOW ON RESISTANCE LOW CAPACITANCE 6pF ABSOLUTE MAXIMUM RATINGS 1 @ 25 °C unless otherwise stated Maximum Temperatures Storage Temperature -65 to 150°C Junction Operating Temperature
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2N5114
2N5114,
2N5115,
2N5116
500mW
-50mA
2N5114
25-year-old,
LS5114
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2n5114
Abstract: No abstract text available
Text: 2N5114 SERIES SINGLE P-CHANNEL JFET FEATURES REPLACEMENT FOR SILICONIX 2N5114, 2N5115, 2N5116 75 LOW ON RESISTANCE LOW CAPACITANCE 6pF ABSOLUTE MAXIMUM RATINGS 1 @ 25 °C unless otherwise stated Maximum Temperatures Storage Temperature -65 to 150°C Junction Operating Temperature
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2N5114
2N5114,
2N5115,
2N5116
500mW
-50mA
2N5114
25-year-old,
LS5114
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2N5018
Abstract: No abstract text available
Text: 2N5018 SERIES SINGLE P-CHANNEL JFET SWITCH FEATURES DIRECT REPLACEMENT FOR SILICONIX 2N5018 ZERO OFFSET VOLTAGE TO-18 TOP VIEW 75Ω LOW ON RESISTANCE ABSOLUTE MAXIMUM RATINGS @ 25 °C unless otherwise stated 1 S Maximum Temperatures Storage Temperature -55 to 150°C
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2N5018
2N5018
500mW
-10mA
25-year-old,
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6W MARKING CODE SOT23
Abstract: MMBFJ175LT1 MMBFJ175LT1G 6w sot23
Text: MMBFJ175LT1 Preferred Device JFET Chopper P-Channel - Depletion Features •ăPb-Free Package is Available http://onsemi.com 2 SOURCE MAXIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Symbol Value Unit VDG 25 V VGS r -25 V Symbol Max Unit
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MMBFJ175LT1
OT-23
O-236)
MMBFJ175LT1/D
6W MARKING CODE SOT23
MMBFJ175LT1
MMBFJ175LT1G
6w sot23
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UNION CARBIDE
Abstract: No abstract text available
Text: 2N5018 SERIES SINGLE P-CHANNEL JFET SWITCH FEATURES DIRECT REPLACEMENT FOR SILICONIX 2N5018 ZERO OFFSET VOLTAGE 75Ω LOW ON RESISTANCE TO-18 TOP VIEW RATINGS1 ABSOLUTE MAXIMUM @ 25 °C unless otherwise stated S Maximum Temperatures Storage Temperature -55 to 150°C
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2N5018
2N5018
500mW
-10mA
25-year-old,
UNION CARBIDE
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amelco
Abstract: No abstract text available
Text: J/SST174 SERIES SINGLE P-CHANNEL JFET SWITCH FEATURES Replacement For SILICONIX J/SST174 SERIES rDS on ≤ 85 LOW ON RESISTANCE LOW GATE OPERATING CURRENT ABSOLUTE MAXIMUM RATINGS ID(off) = 10pA 1 @ 25 °C (unless otherwise stated) Maximum Temperatures SST SERIES
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J/SST174
OT-23
350mW
-50mA
25-year-old,
SST174
amelco
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SOT-23 marking 12F
Abstract: 2000E7
Text: MOTOROLA Order this document by MMBF5460LT1/D SEMICONDUCTOR TECHNICAL DATA JFET General Purpose Transistor P-Channel MMBF5460LT1 2 SOURCE MAXIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Forward Gate Current Symbol Value Unit VDG 40 Vdc
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MMBF5460LT1/D
MMBF5460LT1
OT-23
O-236AB)
SOT-23 marking 12F
2000E7
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6x marking sot-23 p-channel
Abstract: 6W MARKING CODE SOT23 transistor 6y "P-Channel JFET" P Channel JFET CMPFJ174 P-Channel JFET Amplifier marking code ny CMPFJ175 CMPFJ176
Text: Data Sheet CMPFJ174 CMPFJ175 CMPFJ176 CMPFJ177 Central Sem icon du ctor Corp. SURFACE MOUNT SILICON P-CHANNEL JFET 145 Adams Ave., Hauppauge, NY 11788 USA Phone 516 435-1110 FAX (516) 435-1824 SOT-23 CASE Manufacturers of World Class Discrete Semiconductors
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OCR Scan
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CMPFJ174
CMPFJ175
CMPFJ176
CMPFJ177
OT-23
6x marking sot-23 p-channel
6W MARKING CODE SOT23
transistor 6y
"P-Channel JFET"
P Channel JFET
P-Channel JFET Amplifier
marking code ny
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MMBF5486LT1
Abstract: 318C8 marking gfg 6f
Text: MOTOROLA Order this document by MMBF5486LT1/D SEMICONDUCTOR TECHNICAL DATA JFET Transistor N-Channel 2 SOURCE MMBF5486LT1 M o to ro la P re fe rre d D e vic e MAXIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Forward Gate Current Symbol
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OCR Scan
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MMBF5486LT1/D
MMBF5486LT1
OT-23
O-236AB)
MMBF5486LT1
318C8
marking gfg 6f
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PDF
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"P-Channel JFETs"
Abstract: 2N5116
Text: This JFET Transistors Material f P-Channel JFETs National Semiconductor Copyrighted A m Switches BV qss Type No. Case Style By Its 2N5018 TO-18 2N5019 TO-18 2N5114 TO-18 2N5115 TO-18 2N5116 TO-18 Respective J174 J175 J176 J177 P1086 P1087 TO-92 TO-92 TO-92
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tSD113D
T-39-01
"P-Channel JFETs"
2N5116
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFÜ175LT1 P-Channel — Depletion Motorola Preferred Device 2 SOURCE % 1 DRAIN 2 MAXIMUM RATINGS Rating D ra in -G a te Voltage Reverse G a te -S o u rce Voltage Symbol Value Unit VDG 25 V VGS r -2 5 V
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OCR Scan
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175LT1
OT-23
236AB)
MMBFJ175LT1
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET C h o p p e r T ra n sisto r N-Channel — Depletion M AXIMUM RATINGS Rating D ra in -G a te Voltage G a te -S o u rce Voltage Symbol Value Unit VDG -3 5 Vdc VGS -3 5 Vdc Gate Current 'g 50 mAdc Total Device Dissipation @ Ta = 253C
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PF5301
Abstract: No abstract text available
Text: JFET Transistors NATL INational Semiconductor N-Channel JFETs Caso Style 2N4117 2N4117A 2N4118 2N4118A 2N4119 2N4119A •gss p F @ V dg Max (V) Vp ■d s s (fiA @V |jS) VDS ■d (V) Min Max (V) (nA) Min Max (V) @ Gf» (fim ho) @Vqs Min Max (V) TO-72 TO-72
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2N4117
2N4117A
2N4118
2N4118A
2N4119
2N4119A
NF5301
NF5301-1
NF5301-2
NF5301-3
PF5301
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ls841
Abstract: No abstract text available
Text: LINEAR SYSTEMS LS840 LS841 LS842 J.OW NOISE LOW DRIFT LOW CAPACITANCE MONOUTHIC DUAL N-CHANNEL JFET Linear Integrateci Systems FEATURES LOW NOISE en=8n V /H zT Y P . LOW LEAKAGE iQ = 10pATYP. LOW DRIFT 1V GS1-2 7 Tl= 5MV/°C max. LOW OFFSET VOLTAGE IV G s i. 2 l = 2 m V T Y P -
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10pATYP.
LS840
LS841
LS842
400mW
200pA
200pA
100Hz
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Untitled
Abstract: No abstract text available
Text: IH401A HARRIS S E M I C O N D U C T O R QUAD Varafet Analog Switch October 1997 Features Description • rDS ON (Ty P ) . 35i2 The IH401A is made up of 4 monolithically constructed combinations of varacitor type diode and a N-Channel JFET.
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OCR Scan
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IH401A
IH401A
2N4391,
1-800-4-HARRIS
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"P-Channel JFET"
Abstract: CMPF5460 CMPF5461 CMPF5462 MARKING CODE 16 transistor sot23 p-channel jfet SOT-23 vhz SOT-23 "vhz"
Text: Datasheet r o w 1fli— • l M l sem iconductor worp. h m a S ^ b a mMm m« A CMPF5460 CMPF5461 CMPF5462 mm SURFACE MOUNT SILICON P-CHANNEL JFET 145 Adams Ave., Hauppauge, NY 11788 USA Phone 516 435-1110 FAX (516) 435-1824 SOT-23 CASE Manufacturers of World Class Discrete Semiconductors
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OCR Scan
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CMPF5460
CMPF5461
CMPF5462
OT-23
100Hz
"P-Channel JFET"
CMPF5462
MARKING CODE 16 transistor sot23
p-channel jfet
SOT-23 vhz
SOT-23 "vhz"
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2N5460
Abstract: 2n5462 2N5461
Text: Data Sheet 2N546Ö 2N5461 2N5462 Ul P-CHANNEL JFET S e m ic o n d u c to r C o rp . JEDEC T O -92 CASE 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Manufacturers of W orld C lass Discrete Semiconductors m I • v u
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OCR Scan
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2N5k62
to-92
2N5460
2N5h60
2N5461
100Hzl
100Hz
2n5462
2N5461
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Untitled
Abstract: No abstract text available
Text: JFET Transistors National J2fl Semiconductor P-Channel JFETs in m Switches BVgsS BVgdo V @ Ig Min (juA) Igss (nA) @VDG Max (V) >D(off) (nA) @ Vds Max (V) 2N5018 TO-18 2N5019 TO-18 2N5114 TO-18 2N5115 TO-18 2N5116 TO-18 30 30 30 30 30 1 1 1 1 1 2 2 0.5 0.5
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2N5018
2N5019
2N5114
2N5115
2N5116
P1086
P1087
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2N5458 NATIONAL SEMICONDUCTOR
Abstract: to236 2n4338 MMBFJ201 MMBFJ202 2N5458 BF244A BF245C JFET 2N3684 2N3686 2N4338
Text: JFET General Purpose continued 7 baE T> m b 5 0 1 1 3 0 003T H T fl bTO « N S C S . NATL SEMICON]) ( DISCRETE ) N Channel V p @ V DSlD Device 3 2N3684 2N3686 2N3822 PN4303 2N4338 2N4339 2N4340 2N5457 MMBF5457 2N5458 MMBF5458 2N5459 MMBF5459 BF244Ä BF245A
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OCR Scan
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b501130
003THTfl
2N3684
2N3686
2N3822
PN4303
2N4338
T0-18
2N4339
2N5458 NATIONAL SEMICONDUCTOR
to236 2n4338
MMBFJ201
MMBFJ202
2N5458
BF244A
BF245C JFET
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