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    MMBFJ175LT1 Price and Stock

    onsemi MMBFJ175LT1G

    JFET P-CH 30V SOT23-3
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    onsemi SMMBFJ175LT1G

    JFET P-CH 30V SOT23-3
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    DigiKey SMMBFJ175LT1G Digi-Reel 2,475 1
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    onsemi MMBFJ175LT1

    JFET P-CH 30V 0.225W SOT23
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    onsemi MMBFJ175LT3G

    JFETs P-Channel JFET Transistor, 30 V
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    Mouser Electronics MMBFJ175LT3G 7,212
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    onsemi MMBFJ175LT1G.

    Jfet, 30V, 0.6A, 0.225W, Sot-23-3; Gate Source Breakdown Voltage Max:30V; Zero Gate Voltage Drain Current Max:60Ma; Gate Source Cutoff Voltage Max:6V; No. Of Pins:3 Pin; Operating Temperature Max:150°C; Product Range:- Rohs Compliant: Yes |Onsemi MMBFJ175LT1G.
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    Newark MMBFJ175LT1G. Reel 3,000
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    MMBFJ175LT1 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MMBFJ175LT1 Motorola JFET Chopper, P-Channel Depletion Original PDF
    MMBFJ175LT1 Motorola JFET CHOPPER Original PDF
    MMBFJ175LT1 On Semiconductor JFET Chopper P-Channel - Depletion Original PDF
    MMBFJ175LT1 On Semiconductor JFET Chopper P-Channel - Depletion Original PDF
    MMBFJ175LT1 On Semiconductor JFET Chopper P-Channel Original PDF
    MMBFJ175LT1 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    MMBFJ175LT1/D On Semiconductor P hannel Depletion Original PDF
    MMBFJ175LT1-D On Semiconductor JFET Chopper P-Channel - Depletion Original PDF
    MMBFJ175LT1G On Semiconductor Small Signal SOT23 JFET P Channel 30V Tape and Reel Original PDF

    MMBFJ175LT1 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MMBFJ175LT1

    Abstract: MMBF175
    Text: ON Semiconductort JFET Chopper MMBFJ175LT1 P–Channel – Depletion ON Semiconductor Preferred Device 3 MAXIMUM RATINGS 1 Rating Symbol Drain–Gate Voltage Reverse Gate–Source Voltage Value Unit VDG 25 V VGS r –25 V 2 CASE 318–08, STYLE 10 SOT–23 (TO–236AB)


    Original
    MMBFJ175LT1 236AB) r14525 MMBFJ175LT1/D MMBFJ175LT1 MMBF175 PDF

    MMBFJ175LT1

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMBFJ175LT1/D SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Symbol Value Unit VDG 25 V VGS r – 25 V Symbol Max


    Original
    MMBFJ175LT1/D MMBFJ175LT1 236AB) MMBFJ175LT1/D* MMBFJ175LT1 PDF

    6W SOT23-3

    Abstract: MMBFJ175LT1 MMBFJ175LT1G
    Text: MMBFJ175LT1 Preferred Device JFET Chopper P−Channel − Depletion Features • Pb−Free Package is Available http://onsemi.com 2 SOURCE MAXIMUM RATINGS Rating Drain−Gate Voltage Reverse Gate−Source Voltage Symbol Value Unit VDG 25 V VGS r −25 V Symbol


    Original
    MMBFJ175LT1 OT-23 O-236) MMBFJ175LT1/D 6W SOT23-3 MMBFJ175LT1 MMBFJ175LT1G PDF

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort JFET Chopper MMBFJ175LT1 P−Channel − Depletion ON Semiconductor Preferred Device 3 MAXIMUM RATINGS 1 Rating Symbol Drain −Gate Voltage Value Unit VDG 25 V VGS r −25 V Symbol Max Unit Total Device Dissipation FR− 5 Board(1) TA = 25°C


    Original
    MMBFJ175LT1 236AB) PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBFJ175LT1 Transistors P-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)30 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)225m’ Maximum Operating Temp (øC)150õ I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition)20 V(GS)off Min. (V)3.0


    Original
    MMBFJ175LT1 PDF

    MMBF175

    Abstract: No abstract text available
    Text: ON Semiconductort JFET Chopper MMBFJ175LT1 P–Channel – Depletion ON Semiconductor Preferred Device 3 MAXIMUM RATINGS 1 Rating Symbol Drain–Gate Voltage Reverse Gate–Source Voltage Value Unit VDG 25 V VGS r –25 V Symbol Max Unit PD 225 mW 1.8 mW/°C


    Original
    MMBFJ175LT1 236AB) MMBF175LT1/D MMBF175 PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBFJ175LT1G JFET Chopper P−Channel − Depletion Features • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original
    MMBFJ175LT1G MMBFJ175LT1/D PDF

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Symbol Value Unit VDG 25 V VGS r


    Original
    MMBFJ175LT1 236AB) Ga218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237 PDF

    MMBFJ175LT1

    Abstract: MMBF175
    Text: ON Semiconductort JFET Chopper MMBFJ175LT1 P–Channel — Depletion ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 V VGS r –25 V 3 1 2 THERMAL CHARACTERISTICS Characteristic


    Original
    MMBFJ175LT1 236AB) r14525 MMBF175LT1/D MMBFJ175LT1 MMBF175 PDF

    6W MARKING CODE SOT23

    Abstract: MMBFJ175LT1 MMBFJ175LT1G 6w sot23
    Text: MMBFJ175LT1 Preferred Device JFET Chopper P-Channel - Depletion Features •ăPb-Free Package is Available http://onsemi.com 2 SOURCE MAXIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Symbol Value Unit VDG 25 V VGS r -25 V Symbol Max Unit


    Original
    MMBFJ175LT1 OT-23 O-236) MMBFJ175LT1/D 6W MARKING CODE SOT23 MMBFJ175LT1 MMBFJ175LT1G 6w sot23 PDF

    MMBFJ175LT1

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMBFJ175LT1/D SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Symbol Value Unit VDG 25 V VGS r – 25 V Symbol Max


    Original
    MMBFJ175LT1/D MMBFJ175LT1 236AB) MMBFJ175LT1/D* MMBFJ175LT1 PDF

    MMBFJ175

    Abstract: MMBFJ175LT1G
    Text: MMBFJ175LT1G JFET Chopper P−Channel − Depletion Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant 2 SOURCE MAXIMUM RATINGS Rating Drain−Gate Voltage Reverse Gate−Source Voltage Symbol Value Unit


    Original
    MMBFJ175LT1G OT-23 O-236) MMBFJ175LT1/D MMBFJ175 MMBFJ175LT1G PDF

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


    Original
    SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N PDF

    transistor mosfet buv18a

    Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
    Text: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9


    Original
    PDF

    2N3906 Darlington transistor

    Abstract: BC337 MPS5172 "cross-reference" low noise transistors bc638 transistor mpf102 LOW NOISE BC638 SOT-346 431 BC237 BC307 BC212
    Text: CHAPTER 1 Selector Guide http://onsemi.com 5 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11


    Original
    M1MA151AT1 M1MA151KT1 M1MA152AT1 M1MA152KT1 M1MA151WAT1 M1MA151WKT1 M1MA152WAT1 M1MA152WKT1 BAS16WT1 M1MA141KT1 2N3906 Darlington transistor BC337 MPS5172 "cross-reference" low noise transistors bc638 transistor mpf102 LOW NOISE BC638 SOT-346 431 BC237 BC307 BC212 PDF

    MSC2404

    Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage


    Original
    MSA1022-CT1 Emitte218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72 PDF

    BF245

    Abstract: BC237 MSC2404 mps8093 bf244 MSA1022 MSC2295-BT1 msc2295 MAD1107P MPS6568
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN RF Amplifier Transistors Surface Mount COLLECTOR 3 MSC2295-BT1 MSC2295-CT1 Motorola Preferred Devices 3 2 BASE 1 EMITTER 2 1 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30


    Original
    MSC2295-BT1 MSC2295-CT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BF245 BC237 mps8093 bf244 MSA1022 msc2295 MAD1107P MPS6568 PDF

    mps2112

    Abstract: UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp
    Text: SG388/D Rev. 4, May-2002 Master Components Selector Guide Master Components Selector Guide ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular


    Original
    SG388/D May-2002 r14525 SG388 mps2112 UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp PDF

    stencil

    Abstract: BC237 automatic heat detector project report BC393 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diode BAT54T1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and


    Original
    BAT54T1 Ju218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 stencil BC237 automatic heat detector project report BC393 equivalent PDF

    BC237

    Abstract: level shifter 2N5401 2771 040 0002 MUN5214T1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device


    Original
    SC-70/SOT-323 Spa218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 level shifter 2N5401 2771 040 0002 MUN5214T1 PDF

    bs170 replacement

    Abstract: BC237 BC30 transistor K 2056
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Switching BS170 N–Channel — Enhancement 1 DRAIN  2 GATE 3 SOURCE MAXIMUM RATINGS 1 Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive tp ≤ 50 µs Drain Current(1)


    Original
    BS170 226AA) DS218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 bs170 replacement BC237 BC30 transistor K 2056 PDF

    transistor bc237 bc337

    Abstract: replacement transistor BC337 bc337 TRANSISTOR equivalent bc338 equivalent BC337 TO-92 Generic BC337 circuit example BC160-16 BC337-25 "pin compatible" BC237 BC338 REPLACEMENT
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC337 BC338 Unit Collector – Emitter Voltage VCEO 45 25 Vdc Collector – Base Voltage


    Original
    BC337 BC338 226AA) Junction218A MSC1621T1 MSC2404 MSD1819A MV1620 transistor bc237 bc337 replacement transistor BC337 bc337 TRANSISTOR equivalent bc338 equivalent BC337 TO-92 Generic BC337 circuit example BC160-16 BC337-25 "pin compatible" BC237 BC338 REPLACEMENT PDF

    SSs sot23

    Abstract: No abstract text available
    Text: MMBFJ175LT1* CASE 318-07, STYLE 10 SOT-23 TO-236AB MAXIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Symbol Value Vd G 25 Unit V v GS{r) - 25 V Symbol Max Unit PD 225 mW 1.8 mW/°C R»j a 556 X /W T j. Tsta - 55 to + 150 X THERMAL CHARACTERISTICS


    OCR Scan
    MMBFJ175LT1* OT-23 O-236AB) MMBFJ175LT1 SSs sot23 PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBFJ175LT1* CASE 318-07, STYLE 10 SOT-23 TO-236AB M A X IM U M RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Symbol Value Unit Vd G 25 V v GS(r) -2 5 V Symbol Max Unit PD 225 mW 1.8 mW/°C R0JA 556 °C/W T j' Tsta -5 5 to +150 °C THERM AL CHARACTERISTICS


    OCR Scan
    MMBFJ175LT1* OT-23 O-236AB) MMBFJ175LT1 PDF