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    transistor BC 667

    Abstract: No abstract text available
    Text: SA NY O SEMICONDUCTOR 12 E D I CORP 7 c]lì7D?ti D 0 D S 1 4 S 3 3 - / 1 - p NPN Triple Diffused Planar Silicon Transistor 203 9 Color TV Horizontal Deflection Output Applications 17528 Applications . High-voltage, power switching Features . . . . Fast speed t^maxsO.Mus .


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    PDF IS-20MA IS-313 IS-313A transistor BC 667

    11DF1

    Abstract: 11DF2
    Text: FAST RECOVERY DIODE 11DF1 11DF2 1.1A/100— 200V/trr : 30nsec FEATURES • Miniature Size 2.7C106 DIA 2.30091) • Ultra - Fast Recovery • Low Forward Voltage Drop 0.91035) nl. 0.7 027) • Low Power Loss, High Efficiency ° High Surge Capability „27(1.06)


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    PDF A/100â 00V/trr 30nsec 11DF1 11DF2 11DF1 x0x10 bbl512B 000S147 11DF2

    DIODE T25 4 Jo

    Abstract: No abstract text available
    Text: SIEMENS CMPNTS-, OPTO 44E D • ÖS3b35h 000514b 3 « S I E X SIEM EN S SFH 487P GaAIAs INFRARED EMITTER 1 -4 1 -1 3 Package Dimensions in Inches mm .122(3.1) .098 ÇL5) S u rf#« not Rat .028(0.7) .016(0.4) -L , .1C .10 (2.54) [M T .024(0.6) .016 (0.4)


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    PDF S3b35h 000514b 6E3b32b 000S147 DIODE T25 4 Jo