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    Abstract: No abstract text available
    Text: SSP3N80A A d v a n c e d Power MOSFET FEATURES B ^ dss - • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower-Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA Max. @ VDS = 800V


    OCR Scan     		PDF SSP3N80A 00403b4 003b32fl 3b32t O-220 7Tb4142 DD3b33D